SI4890DY-T1-GE3

SI4890DY-T1-GE3
Mfr. #:
SI4890DY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V 11A 2.5W 12mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4890DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4890DY-T1-GE3 DatasheetSI4890DY-T1-GE3 Datasheet (P4-P6)SI4890DY-T1-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SI4890DY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
SI4
Breite:
3.9 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4890DY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI4890DY-T1, SI4890DY-T, SI4890D, SI4890, SI489, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
***nell
N CHANNEL MOSFET, 30V, 11A
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:11A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.02ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:10V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4890DY-T1-GE3
DISTI # SI4890DY-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$1.4107
SI4890DY-T1-GE3
DISTI # SI4890DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4890DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
    SI4890DY-T1-GE3
    DISTI # 15R5109
    Vishay IntertechnologiesN CH MOSFET,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,Filter Terminals:Surface Mount,No. of Pins:8,On Resistance Rds(on):20mohm,Operating Temperature Max:150°C,Operating Temperature Min:-55°C RoHS Compliant: Yes0
      SI4890DY-T1-GE3
      DISTI # 26R1891
      Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 11A,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes0
        SI4890DY-T1-GE3
        DISTI # 781-SI4890DY-GE3
        Vishay IntertechnologiesMOSFET 30V 11A 2.5W 12mohm @ 10V
        RoHS: Compliant
        0
        • 2500:$1.2900
        • 5000:$1.2400
        SI4890DY-T1-GE3
        DISTI # 1871357
        Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 11A
        RoHS: Compliant
        0
        • 2500:£1.5500
        Bild Teil # Beschreibung
        SI4890DY-T1-E3

        Mfr.#: SI4890DY-T1-E3

        OMO.#: OMO-SI4890DY-T1-E3

        MOSFET 30V 11A 2.5W
        SI4890DY-T1-GE3

        Mfr.#: SI4890DY-T1-GE3

        OMO.#: OMO-SI4890DY-T1-GE3

        MOSFET 30V 11A 2.5W 12mohm @ 10V
        SI4890DY-T1-E3

        Mfr.#: SI4890DY-T1-E3

        OMO.#: OMO-SI4890DY-T1-E3-VISHAY

        IGBT Transistors MOSFET 30V 11A 2.5W
        SI4890DY-T1-GE3

        Mfr.#: SI4890DY-T1-GE3

        OMO.#: OMO-SI4890DY-T1-GE3-VISHAY

        MOSFET 30V 11A 2.5W 12mohm @ 10V
        SI4890DY

        Mfr.#: SI4890DY

        OMO.#: OMO-SI4890DY-1190

        MOSFET RECOMMENDED ALT 781-SI4890DY-T1-E3
        SI4890DY-T1

        Mfr.#: SI4890DY-T1

        OMO.#: OMO-SI4890DY-T1-1190

        Neu und Original
        SI4890DY-TI (SOP8)

        Mfr.#: SI4890DY-TI (SOP8)

        OMO.#: OMO-SI4890DY-TI-SOP8--1190

        Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        2500
        Menge eingeben:
        Der aktuelle Preis von SI4890DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        2,95 $
        2,95 $
        10
        2,45 $
        24,50 $
        100
        1,90 $
        190,00 $
        500
        1,66 $
        830,00 $
        1000
        1,37 $
        1 370,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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