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S29GL01GS11DHIV13

S29GL01GS11DHIV13
Mfr. #:
S29GL01GS11DHIV13
Hersteller:
Cypress Semiconductor
Beschreibung:
IC FLASH 1G PARALLEL 64BGA GL-S
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S29GL01GS11DHIV13 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
S29GL01GS11DHIV13 Mehr Informationen S29GL01GS11DHIV13 Product Details
Produkteigenschaft
Attributwert
Hersteller
ZYPRESSE
Produktkategorie
Erinnerung
Serie
GL-S
Verpackung
Band & Spule (TR)
Paket-Koffer
56-TFSOP (0.724", 18.40mm Width)
Betriebstemperatur
-40°C ~ 85°C (TA)
Schnittstelle
Parallel
Spannungsversorgung
1.65 V ~ 3.6 V
Lieferanten-Geräte-Paket
64-Fortified BGA (9x9)
Speichergröße
1G (64M x 16)
Speichertyp
FLASH - NOR
Geschwindigkeit
110ns
Format-Speicher
BLITZ
Tags
S29GL01GS11DHIV, S29GL01GS11DHI, S29GL01GS11D, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
1G BIT, 3V, 110NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEA
***ical
NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 64-Pin Fortified BGA T/R
***ark
Tape And Reel / 1G Bit, 3V, 110Ns, 64-Ball Fbga, Page Mode Flash Memory Featuring 65 Nm Mirrorbit Process Technology, Vio, Highest Address Sector Protected
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Teil # Mfg. Beschreibung Aktie Preis
S29GL01GS11DHIV13
DISTI # V72:2272_06272376		Cypress SemiconductorNOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 64-Pin FBGA T/R
RoHS: Compliant		1780
  • 75000:$7.5310
  • 30000:$7.6140
  • 15000:$7.6960
  • 6000:$7.7780
  • 3000:$7.8610
  • 1000:$8.7340
  • 500:$9.7050
  • 250:$10.2530
  • 100:$10.9400
  • 50:$11.5540
  • 25:$12.9780
  • 10:$13.5580
  • 1:$14.7580
S29GL01GS11DHIV13
DISTI # S29GL01GS11DHIV13-ND		Cypress SemiconductorIC FLASH 1G PARALLEL 64BGA
RoHS: Compliant
Min Qty: 2200
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2200:$7.7500
S29GL01GS11DHIV13
DISTI # 29064529		Cypress SemiconductorNOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 64-Pin FBGA T/R
RoHS: Compliant		1780
  • 1000:$8.7340
  • 500:$9.7050
  • 250:$10.2530
  • 100:$10.9400
  • 50:$11.5540
  • 25:$12.9780
  • 10:$13.5580
  • 1:$14.7580
S29GL01GS11DHIV13
DISTI # 51Y1538		Cypress SemiconductorTAPE AND REEL / 1G BIT, 3V, 110NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, VIO, HIGHEST ADDRESS SECTOR PROTECTED0
  • 1:$11.8000
S29GL01GS11DHIV13
DISTI # 727-29GL01GS11DHIV13		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		0
  • 1:$12.9800
  • 10:$11.8000
  • 25:$10.9200
  • 50:$10.0300
  • 250:$9.1400
  • 500:$8.5500
  • 1000:$7.8500
Bild Teil # Beschreibung
S29GL01GT12DHN023

Mfr.#: S29GL01GT12DHN023

OMO.#: OMO-S29GL01GT12DHN023

 NOR Flash Nor
S29GL01GT11TFIV40

Mfr.#: S29GL01GT11TFIV40

OMO.#: OMO-S29GL01GT11TFIV40

 NOR Flash IC 1 Gb FLASH MEMORY
S29GL01GS11TFB020

Mfr.#: S29GL01GS11TFB020

OMO.#: OMO-S29GL01GS11TFB020

 NOR Flash Nor
S29GL01GS12DHVV13

Mfr.#: S29GL01GS12DHVV13

OMO.#: OMO-S29GL01GS12DHVV13-CYPRESS-SEMICONDUCTOR

 IC FLASH 1G PARALLEL 64FBGA GL-S
S29GL01GT10TFI013

Mfr.#: S29GL01GT10TFI013

OMO.#: OMO-S29GL01GT10TFI013-CYPRESS-SEMICONDUCTOR

 NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 100ns 56-Pin TSOP T/R
S29GL01GT11DHIV10

Mfr.#: S29GL01GT11DHIV10

OMO.#: OMO-S29GL01GT11DHIV10-CYPRESS-SEMICONDUCTOR

 NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 110ns 64-Pin Fortified BGA Tray
S29GL01GS11WEI029

Mfr.#: S29GL01GS11WEI029

OMO.#: OMO-S29GL01GS11WEI029-CYPRESS-SEMICONDUCTOR

 Flash Memory 1G BIT, 3V, 110NS, WAFER, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
S29GL01GS10FAI010

Mfr.#: S29GL01GS10FAI010

OMO.#: OMO-S29GL01GS10FAI010-CYPRESS-SEMICONDUCTOR

 IC FLASH 1G PARALLEL 64BGA GL-S
S29GL01GP11TFIR10+

Mfr.#: S29GL01GP11TFIR10+

OMO.#: OMO-S29GL01GP11TFIR10--1151

 IC FLASH 1G PARALLEL 56TSOP
S29GL01GS11TFI01

Mfr.#: S29GL01GS11TFI01

OMO.#: OMO-S29GL01GS11TFI01-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von S29GL01GS11DHIV13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
11,30 $
11,30 $
10
10,73 $
107,32 $
100
10,17 $
1 016,69 $
500
9,60 $
4 801,00 $
1000
9,04 $
9 037,20 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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