SI4942DY-T1-E3

Mfr. #:: SI4942DY-T1-E3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI4942DY-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4942DY-T1-E3 Datasheet SI4942DY-T1-E3 Datasheet (P4-P6)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SO-8

Handelsname:: TrenchFET

Verpackung:: Spule

Höhe:: 1.75 mm

Länge:: 4.9 mm

Serie:: SI4

Breite:: 3.9 mm

Marke:: Vishay / Siliconix

Produktart:: MOSFET

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Teil # Aliase:: SI4942DY-E3

Gewichtseinheit:: 0.006596 oz

Tags: SI4942DY-T, SI4942D, SI4942, SI494, SI49, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4942DY-T1-E3 Beschreibung

***ical: Trans MOSFET N-CH 40V 5.3A 8-Pin SOIC N T/R

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 5.3A I(D), 40V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: N-Channel MOSFETs N-CH 40V 5.3A

***ment14 APAC: TRANSISTOR, MOSFET, POLARITY N; Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:40V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:7.4A; Package / Case:SOIC; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI4942DY-T1-E3 DISTI # V36:1790_14141355	Vishay Intertechnologies	Trans MOSFET N-CH 40V 5.3A Automotive 8-Pin SOIC N T/R RoHS: Compliant	0
SI4942DY-T1-E3 DISTI # SI4942DY-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 40V 5.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SI4942DY-T1-E3 DISTI # SI4942DY-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 40V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI4942DY-T1-E3 DISTI # SI4942DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 40V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI4942DY-T1-E3 DISTI # 781-SI4942DY-T1-E3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3 RoHS: Compliant	0
SI4942DY-T1 DISTI # 781-SI4942DY	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3 RoHS: Not compliant	0
SI4942DY-T1-E3	Vishay Intertechnologies		3496
SI4942DY-T1-E3	Vishay Intertechnologies		2796	1206:$1.5087 538:$1.6596 1:$3.0174
SI4942DYT1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 5.3A I(D), 40V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1170
SI4942DY-T1-E3 DISTI # 1653687	Vishay Intertechnologies	TRANSISTOR, MOSFET, POLARITY N RoHS: Compliant	0	1000:$1.6100 500:$1.8000 100:$2.1500 50:$2.3700 10:$2.5500 1:$2.7100

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI4942DY-T1-E3 OMO.#: OMO-SI4942DY-T1-E3	MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3
	Mfr.#: SI4942DY-T1-GE3 OMO.#: OMO-SI4942DY-T1-GE3	MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3
	Mfr.#: SI4942DY OMO.#: OMO-SI4942DY-1190	Neu und Original
	Mfr.#: SI4942DY-T1 OMO.#: OMO-SI4942DY-T1-1190	MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3
	Mfr.#: SI4942DY-T1-E3 OMO.#: OMO-SI4942DY-T1-E3-VISHAY	MOSFET 2N-CH 40V 5.3A 8-SOIC
	Mfr.#: SI4942DY-T1-GE3 OMO.#: OMO-SI4942DY-T1-GE3-VISHAY	MOSFET 2N-CH 40V 5.3A 8-SOIC

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von SI4942DY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

SI4942DY-T 3
SI4942D 4
SI4942 5
SI494 80
SI49 329
SI4 2994

Neueste Produkte

SUM70101EL 100 V P-Channel MOSFET

Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
P-Channel MOSFETs

Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
Compare SI4942DY-T1-E3

SI4942DYT1 vs SI4942DYT1E3 vs SI4942DYT1GE3
SiP32452, SiP32453 Load Switch

Vishay's load switches have a low input logic control threshold and a fast turn on time.
PowerPAIR®

Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.

More Newest Products

SI4942DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes