OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SISA18ADN-T1-GE3

SISA18ADN-T1-GE3
Mfr. #:
SISA18ADN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISA18ADN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISA18ADN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
38.3 A
Rds On - Drain-Source-Widerstand:
6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V, - 16 V
Qg - Gate-Ladung:
21.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
19.8 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
3.3 mm
Serie:
SIS
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
54 S
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns
Typische Einschaltverzögerungszeit:
15 ns
Tags
SISA18, SISA1, SISA, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R
***ure Electronics
MOSFET 30V 7.5MOHM@10V 18A N-CH G-IV
***nsix Microsemi
Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, 30V, 38.3A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:38.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:19.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited
***mal
N-Ch PowerPAK1212 BWL 30V 7.5mohm@10V
***(Formerly Allied Electronics)
SIRA18DP-T1-GE3 N-channel MOSFET Transistor; 15.5 A; 30 V; 8-Pin PowerPAK SO
***ure Electronics
Single N-Channel 30 V 15.5 A 3.3 W Surface Mount Mosfet - POWERPAK-SO-8
***nell
MOSFET, N-CH, 30V, 33A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:14.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
***et Europe
Trans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R
***ark
N-Ch PowerPAK1212-8-Thin BWL 30V Gen4 7.5/12 mohm@10V/4.5V
*** Electronics
MOSFET 30V 7.5mOhm@10V 38.3A N-Ch G-IV
***icontronic
Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***et
Trans MOSFET N-CH 30V 16.5A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 30V 40A PPAK SO-8
*** Electronics
MOSFET 30V 6.7mOhm@10V 40A N-Ch G-IV
***ark
N-CHANNEL 30-V (D-S) MOSFET
***emi
PowerTrench® MOSFET, N-Channel, 30V, 40A, 15mΩ
***ure Electronics
FDD8878 Series 30 V 11 A 15 mOhm SMT N-Ch PowerTrench® MOSFET - TO-252AA
***r Electronics
Power Field-Effect Transistor, 36A I(D), 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***emi
Single N-Channel Power MOSFET 30V, 47A, 7.4mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks
*** Stop Electro
Power Field-Effect Transistor, 47A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 30V 15.3A Automotive 8-Pin WDFN EP T/R
***i-Key
MOSFET N-CH 30V 15.3A/47A 8WDFN
***enic
30V 47A 5.9m´Î@10V30A 28W 2.2V@250uA 163pF@15V N Channel 993pF@15V [email protected] -55¡Í~+175¡Í@(Tj) WDFN-8 MOSFETs ROHS
***emi
Single N−Channel Power MOSFET 30 V, 46 A, 6.95mΩ
***et
Trans MOSFET N-CH 30V 15A 8-Pin SO-FL T/R
***ark
TRENCH 6 30V NCH / REEL ROHS COMPLIANT: YES
***enic
30V 46A 5.8m´Î@10V30A 23.6W 2.2V@250uA 162pF@15V N Channel 987pF@15V [email protected] -55¡Í~+150¡Í@(Tj) SO-8FL MOSFETs ROHS
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISA18ADN-T1-GE3
DISTI # V72:2272_09216153		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		1077
  • 1000:$0.2320
  • 500:$0.2922
  • 250:$0.3632
  • 100:$0.3733
  • 25:$0.4616
  • 10:$0.5502
  • 1:$0.7141
SISA18ADN-T1-GE3
DISTI # V36:1790_09216153		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
  • 3000000:$0.1909
  • 1500000:$0.1911
  • 300000:$0.2039
  • 30000:$0.2245
  • 3000:$0.2279
SISA18ADN-T1-GE3
DISTI # SISA18ADN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 38.3A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		17280In Stock
  • 1000:$0.2574
  • 500:$0.3331
  • 100:$0.4239
  • 10:$0.5680
  • 1:$0.6600
SISA18ADN-T1-GE3
DISTI # SISA18ADN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 38.3A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		17280In Stock
  • 1000:$0.2574
  • 500:$0.3331
  • 100:$0.4239
  • 10:$0.5680
  • 1:$0.6600
SISA18ADN-T1-GE3
DISTI # SISA18ADN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 38.3A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		15000In Stock
  • 30000:$0.1882
  • 15000:$0.1984
  • 6000:$0.2132
  • 3000:$0.2278
SISA18ADN-T1-GE3
DISTI # 33921352		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		1077
  • 1000:$0.2320
  • 500:$0.2922
  • 250:$0.3632
  • 100:$0.3733
  • 36:$0.4616
SISA18ADN-T1-GE3
DISTI # SISA18ADN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R (Alt: SISA18ADN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SISA18ADN-T1-GE3
    DISTI # SISA18ADN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R (Alt: SISA18ADN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.1699
    • 18000:€0.1819
    • 12000:€0.1969
    • 6000:€0.2289
    • 3000:€0.3359
    SISA18ADN-T1-GE3
    DISTI # SISA18ADN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA18ADN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
      SISA18ADN-T1-GE3
      DISTI # 19X1956      		Vishay IntertechnologiesMOSFET Transistor, N Channel, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V RoHS Compliant: Yes2850
      • 1000:$0.2410
      • 500:$0.3120
      • 250:$0.3460
      • 100:$0.3800
      • 50:$0.4240
      • 25:$0.4670
      • 10:$0.5110
      • 1:$0.6670
      SISA18ADN-T1-GE3
      DISTI # 99W9573      		Vishay IntertechnologiesMOSFET Transistor, N Channel, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V0
      • 50000:$0.1810
      • 30000:$0.1890
      • 20000:$0.2030
      • 10000:$0.2170
      • 5000:$0.2360
      • 1:$0.2410
      SISA18ADN-T1-GE3
      DISTI # 78-SISA18ADN-T1-GE3      		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
      RoHS: Compliant      		7926
      • 1:$0.6600
      • 10:$0.5060
      • 100:$0.3760
      • 500:$0.3090
      • 1000:$0.2390
      SISA18ADNT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		2915
        SISA18ADN-T1-GE3
        DISTI # 2364101        		Vishay IntertechnologiesMOSFET, N-CH, 30V, 38.3A, PPAK1212-8
        RoHS: Compliant        		2350
        • 3000:$0.3610
        • 1000:$0.3680
        • 500:$0.4760
        • 100:$0.5790
        • 10:$0.7790
        • 1:$1.0200
        SISA18ADN-T1-GE3
        DISTI # 2364101        		Vishay IntertechnologiesMOSFET, N-CH, 30V, 38.3A, PPAK1212-82475
        • 500:£0.2410
        • 250:£0.2670
        • 100:£0.2930
        • 25:£0.4150
        • 5:£0.4460
        SISA18ADN-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8Americas - 3000
        • 3000:$0.1980
        • 6000:$0.1920
        • 12000:$0.1880
        • 18000:$0.1850
        Bild Teil # Beschreibung
        LT1677CS8#PBF

        Mfr.#: LT1677CS8#PBF

        OMO.#: OMO-LT1677CS8-PBF

        		 Precision Amplifiers L N, R2R Prec Op Amp
        TCAN330GDR

        Mfr.#: TCAN330GDR

        OMO.#: OMO-TCAN330GDR

        		 CAN Interface IC TCAN330G
        SN74LVC3G34DCUR

        Mfr.#: SN74LVC3G34DCUR

        OMO.#: OMO-SN74LVC3G34DCUR

        		 Buffers & Line Drivers Triple
        IRLML6244TRPBF

        Mfr.#: IRLML6244TRPBF

        OMO.#: OMO-IRLML6244TRPBF

        		 MOSFET MOSFT 20V 6.3A 21mOhm 2.5V cpbl
        CSD17308Q3

        Mfr.#: CSD17308Q3

        OMO.#: OMO-CSD17308Q3

        		 MOSFET 30V NCh NexFET Pwr MOSFET
        STM32F407IET6

        Mfr.#: STM32F407IET6

        OMO.#: OMO-STM32F407IET6

        		 ARM Microcontrollers - MCU ARM M4 512 FLASH 168 Mhz 192kB SRAM
        0686F0500-01

        Mfr.#: 0686F0500-01

        OMO.#: OMO-0686F0500-01

        		 Surface Mount Fuses Fuse, Surface Mount 0.5A, 0603 Size
        IRLML6244TRPBF

        Mfr.#: IRLML6244TRPBF

        OMO.#: OMO-IRLML6244TRPBF-INFINEON-TECHNOLOGIES

        		 Neu und Original
        S24SP24003PDFA

        Mfr.#: S24SP24003PDFA

        OMO.#: OMO-S24SP24003PDFA-DELTA-PRODUCT-GROUPS

        		 Isolated DC/DC Converters DC/DC Converter, 60W SingleOutput +24Vout
        TCAN330GDR

        Mfr.#: TCAN330GDR

        OMO.#: OMO-TCAN330GDR-TEXAS-INSTRUMENTS

        		 CAN Interface IC 3.3-V CAN Transceivers with CAN FD (Flexible Data Rate) 8-SOIC -40 to 125
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1990
        Menge eingeben:
        Der aktuelle Preis von SISA18ADN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,66 $
        0,66 $
        10
        0,51 $
        5,06 $
        100
        0,38 $
        37,60 $
        500
        0,31 $
        154,50 $
        1000
        0,24 $
        239,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
        Beginnen mit
        Neueste Produkte
        • -12 V and -20 V P-Channel Gen III MOSFETs
          -12 V and -20 V P-Channel Gen III MOSFETs
          Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
        • DG2788A Dual DPDT / Quad SPDT Analog Switch
          DG2788A Dual DPDT / Quad SPDT Analog Switch
          Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
        • Smart Load Switches
          Smart Load Switches
          Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
        • SUM70101EL 100 V P-Channel MOSFET
          SUM70101EL 100 V P-Channel MOSFET
          Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
        • Compare SISA18ADN-T1-GE3
          Compare SISA18ADN-T1-GE3
          SISA18ADNT1GE3 vs SISA18DNT1GE3 vs SISA18JNT1GE3
        • DGQ2788A AEC-Q100 Qualified Analog Switch
          DGQ2788A AEC-Q100 Qualified Analog Switch
          The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
        More Newest Products
        Top