STQ2HNK60ZR-AP

STQ2HNK60ZR-AP
Mfr. #:
STQ2HNK60ZR-AP
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STQ2HNK60ZR-AP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STQ2HNK60ZR-AP Mehr Informationen STQ2HNK60ZR-AP Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
500 mA
Rds On - Drain-Source-Widerstand:
4.8 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SuperMESH
Höhe:
4.95 mm
Länge:
4.95 mm
Serie:
STQ2HNK60ZR-AP
Transistortyp:
1 N-Channel
Breite:
3.94 mm
Marke:
STMicroelectronics
Abfallzeit:
50 ns
Produktart:
MOSFET
Anstiegszeit:
30 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
13 ns
Typische Einschaltverzögerungszeit:
10 ns
Gewichtseinheit:
0.007760 oz
Tags
STQ2, STQ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
***ure Electronics
Single N-Channel 600 V 4.8 Ohm 15 nC 3 W Silicon Through Hole Mosfet - TO-92
***et
Trans MOSFET N-CH 600V 0.5A 3-Pin TO-92 T/R
***nell
MOSFET, N-CH, 600V, 0.5A, TO-92; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 4.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 3W; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: SuperMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***r Electronics
Power Field-Effect Transistor, 0.5A I(D), 600V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***et
TRANS MOSFET N-CH 500V 0.35A 3PIN TO-92L
***i-Key Marketplace
MOSFET N-CH 500V 350MA TO92-3
***el Electronic
IC SUPERVISOR 1 CHANNEL 3SSOP
*** Electronics
N-CHANNEL POWER MOSFET
***ser
MOSFETs 500V, Single
***emi
N-Channel Power MOSFET, QFET®, 500 V, 0.35 A, 5.3 Ω, TO-92L
***ark
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,350MA I(D),TO-92
***ical
Trans MOSFET N-CH 500V 0.35A 3-Pin TO-92L Fan-Fold
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***el Electronic
ACS108 Series 600 Vdrm 0.8 A Micro Motor Transient Protected AC Switch - SOT-223
***i-Key Marketplace
MOSFET N-CH 450V 500MA TO92-3
***et
N-Channel 450V 500mA (Tc) 900mW (Ta) Through Hole TO-92-3
*** Electronics
SMALL SIGNAL N-CHANNEL MOSFET
***ser
MOSFETs N-CH/450V/0.5A/BFET
***et
Trans MOSFET N-CH 450V 0.5A 3-Pin TO-92 Ammo Pack
***S
Transistor MOSFET 450V <4.5Ω 0.5A 3.1W TO-92
***r Electronics
Power Field-Effect Transistor, 0.5A I(D), 450V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***icroelectronics
N-channel 600 V, 7.2 Ohm, 0.4 A Zener-protected SuperMESH(TM) MOSFET in a TO-92 package
***et
Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 Ammo Pack
***r Electronics
Power Field-Effect Transistor, 0.4A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***emi
Power MOSFET, N-Channel, B-FET, 200 V, 1 A, 1.5 Ω, TO-92L
***et
Trans MOSFET N-CH 200V 1A 3-Pin TO-92L T/R
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply andmotor control.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Teil # Mfg. Beschreibung Aktie Preis
STQ2HNK60ZR-AP
DISTI # V36:1790_06565387
STMicroelectronicsTrans MOSFET N-CH 600V 0.5A 3-Pin TO-92 Ammo
RoHS: Compliant
0
  • 4000000:$0.2376
  • 2000000:$0.2379
  • 400000:$0.2600
  • 40000:$0.2985
  • 4000:$0.3049
STQ2HNK60ZR-AP
DISTI # 497-12344-1-ND
STMicroelectronicsMOSFET N-CH 600V 0.5A TO-92
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
9241In Stock
  • 1000:$0.3530
  • 500:$0.4413
  • 100:$0.5582
  • 10:$0.7280
  • 1:$0.8300
STQ2HNK60ZR-AP
DISTI # 497-12344-3-ND
STMicroelectronicsMOSFET N-CH 600V 0.5A TO-92
RoHS: Compliant
Min Qty: 2000
Container: Tape & Box (TB)
8000In Stock
  • 10000:$0.2785
  • 6000:$0.2892
  • 2000:$0.3106
STQ2HNK60ZR-AP
DISTI # STQ2HNK60ZR-AP
STMicroelectronicsTrans MOSFET N-CH 600V 0.5A 3-Pin TO-92 T/R (Alt: STQ2HNK60ZR-AP)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 4000
  • 1000:€0.1219
  • 500:€0.1309
  • 100:€0.1419
  • 50:€0.1549
  • 25:€0.1899
  • 10:€0.2439
  • 1:€0.3419
STQ2HNK60ZR-AP
DISTI # STQ2HNK60ZR-AP
STMicroelectronicsTrans MOSFET N-CH 600V 0.5A 3-Pin TO-92 T/R - Ammo Pack (Alt: STQ2HNK60ZR-AP)
RoHS: Compliant
Min Qty: 2000
Container: Ammo Pack
Americas - 4000
  • 20000:$0.2599
  • 12000:$0.2649
  • 8000:$0.2779
  • 4000:$0.2909
  • 2000:$0.3049
STQ2HNK60ZR-AP
DISTI # 511-STQ2HNK60ZR-AP
STMicroelectronicsMOSFET N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
RoHS: Compliant
3009
  • 1:$0.7700
  • 10:$0.6330
  • 100:$0.4080
  • 1000:$0.3270
  • 2500:$0.2760
  • 10000:$0.2660
  • 25000:$0.2550
STQ2HNK60ZR-AP
DISTI # 2784046
STMicroelectronicsMOSFET, N-CH, 600V, 0.5A, TO-921860
  • 500:£0.2490
  • 250:£0.2830
  • 100:£0.3170
  • 25:£0.5070
  • 5:£0.5540
STQ2HNK60ZR-AP
DISTI # 2807309
STMicroelectronicsMOSFET, N-CH, 600V, 0.5A, TO-92
RoHS: Compliant
1575
  • 1000:$0.5320
  • 500:$0.6650
  • 100:$0.8420
  • 5:$1.1000
STQ2HNK60ZR-AP
DISTI # 2784046
STMicroelectronicsMOSFET, N-CH, 600V, 0.5A, TO-92
RoHS: Compliant
1785
  • 1000:$0.5320
  • 500:$0.6650
  • 100:$0.8420
  • 5:$1.1000
Bild Teil # Beschreibung
OPA855IDSGR

Mfr.#: OPA855IDSGR

OMO.#: OMO-OPA855IDSGR

High Speed Operational Amplifiers TRANSIMPEDANCE OP AMP
TMUX1072DGSR

Mfr.#: TMUX1072DGSR

OMO.#: OMO-TMUX1072DGSR

Analog Switch ICs 5V switch with 20V OVP
TMUX136MRSER

Mfr.#: TMUX136MRSER

OMO.#: OMO-TMUX136MRSER

Analog Switch ICs Dual SPDT, low cap, 6.1GHz switch
RC1206FR-07340KL

Mfr.#: RC1206FR-07340KL

OMO.#: OMO-RC1206FR-07340KL

Thick Film Resistors - SMD 340K OHM 1%
TMUX136MRSER

Mfr.#: TMUX136MRSER

OMO.#: OMO-TMUX136MRSER-TEXAS-INSTRUMENTS

DUAL SPDT, LOW-CAPACITANCE, 6.1
TMUX1072DGSR

Mfr.#: TMUX1072DGSR

OMO.#: OMO-TMUX1072DGSR-TEXAS-INSTRUMENTS

5V SWITCH WITH 20V OVP
OPA855IDSGR

Mfr.#: OPA855IDSGR

OMO.#: OMO-OPA855IDSGR-TEXAS-INSTRUMENTS

LINEAR OPERATIONAL (OP) AMP
OPA858IDSGR

Mfr.#: OPA858IDSGR

OMO.#: OMO-OPA858IDSGR-TEXAS-INSTRUMENTS

TRANSIMPEDANCE OP AMP
RC1206JR-073KL

Mfr.#: RC1206JR-073KL

OMO.#: OMO-RC1206JR-073KL-YAGEO

Thick Film Resistors - SMD 3K OHM 5%
RC1206FR-077K15L

Mfr.#: RC1206FR-077K15L

OMO.#: OMO-RC1206FR-077K15L-YAGEO

Thick Film Resistors - SMD 7.15K OHM 1%
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von STQ2HNK60ZR-AP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,77 $
0,77 $
10
0,63 $
6,33 $
100
0,41 $
40,80 $
1000
0,33 $
327,00 $
2500
0,28 $
690,00 $
10000
0,27 $
2 660,00 $
25000
0,26 $
6 375,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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