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ZXMP3A16DN8TA

ZXMP3A16DN8TA
Mfr. #:
ZXMP3A16DN8TA
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET Dl 30V P-Chnl UMOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
ZXMP3A16DN8TA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
ZXMP3A16DN8TA DatasheetZXMP3A16DN8TA Datasheet (P4-P6)ZXMP3A16DN8TA Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
ZXMP3A16DN8TA Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
5.5 A
Rds On - Drain-Source-Widerstand:
45 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.1 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.5 mm
Länge:
5 mm
Serie:
ZXMP3
Transistortyp:
2 P-Channel
Typ:
MOSFET
Breite:
4 mm
Marke:
Eingebaute Dioden
Abfallzeit:
21.4 ns
Produktart:
MOSFET
Anstiegszeit:
6.5 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
37.1 ns
Typische Einschaltverzögerungszeit:
3.8 ns
Gewichtseinheit:
0.002610 oz
Tags
ZXMP3A16DN8T, ZXMP3A16D, ZXMP3A16, ZXMP3A, ZXMP3, ZXMP, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***C
Trans MOSFET P-CH 30V 5.5A 8-Pin SOIC T/R Trans MOSFET P-CH 30V 5.5A 8-Pin SOIC T/R
***ure Electronics
Dual P-Channel 30 V 0.045 Ohm Surface Mount Enhancement Mode MOSFET - SOIC-8
***des Inc SCT
Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***ark
Mosfet, Dual, P-Ch, 30V, 5.5A Rohs Compliant: Yes
***ronik
DUALMOS -30V 45mOhm -5.5A SO-8
***C
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R
***ure Electronics
ZXMN3A06 Series Dual 30 V 0.035 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8
***nell
MOSFET, DUAL, N, 30V, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 6.2A; Current Id Max: 6.2A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; No. of Transistors: 2; On Resistance Rds(on), N Channel: 0.035ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: 1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Pulse Current Idm: 30A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Dual N & P Channel 30 V 6.4 A 2.1 W Surface Mount Complementary Mosfet - SOIC-8
***et
Trans MOSFET N/P-CH 30V 6.4A/5.5A 8-Pin SOIC T/R
***ment14 APAC
MOSFET, DUAL, NP, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id P Channel:5.4A; Continuous Drain Current Id, N Channel:6.4A; Continuous Drain Current Id, P Channel:-5.4A; Current Id Max:6.4A; Current Temperature:25°C; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-30V; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Module Configuration:Dual; No. of Transistors:2; On Resistance Rds(on), N Channel:0.035ohm; On Resistance Rds(on), P Channel:0.048ohm; On State Resistance N Channel Max:35mohm; On State Resistance P Channel Max:48mohm; Package / Case:SOIC; Power Dissipation Pd:1.25W; Power Dissipation Pd:2.1W
***(Formerly Allied Electronics)
SI4431CDY-T1-GE3 P-channel MOSFET Transistor; 7.2 A; 30 V; 8-Pin SOIC
***ure Electronics
Single P-Channel 30 V 32 mOhms Surface Mount Power Mosfet - SOIC-8
*** Stop Electro
Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Mosfet, P Channel, -30V, -9A, Soic-8, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9A; On Resistance Rds(On):0.026Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pins Rohs Compliant: No
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single P-Channel 30 V 0.045 Ohm 59 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
Mosfet Transistor; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.8A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***Yang
Transistor MOSFET Array Dual N-CH 30V 6A 8-Pin SOIC T/R - Tape and Reel
***emi
Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; On Resistance Rds(On):0.024Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Product Range:-Rohs Compliant: Yes
***ure Electronics
ZXMP3A16 Series 30 V 0.04 Ohm P-Channel Enhancement Mode MOSFET - SOIC-8
***C
Trans MOSFET P-CH 30V 6.7A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET P-Channel 30V 6.7A SOIC8
***ark
Mosfet, P-Ch, 30V, 6.7A, Soic Rohs Compliant: Yes
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***S
French Electronic Distributor since 1988
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Teil # Mfg. Beschreibung Aktie Preis
ZXMP3A16DN8TA
DISTI # 26572891		Zetex / Diodes IncTrans MOSFET P-CH 30V 5.5A Automotive 8-Pin SOIC T/R
RoHS: Compliant		8000
  • 500:$0.5150
ZXMP3A16DN8TA
DISTI # ZXMP3A16DN8CT-ND		Diodes IncorporatedMOSFET 2P-CH 30V 4.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		37In Stock
  • 100:$1.1437
  • 10:$1.4470
  • 1:$1.6300
ZXMP3A16DN8TA
DISTI # ZXMP3A16DN8TR-ND		Diodes IncorporatedMOSFET 2P-CH 30V 4.2A 8-SOIC
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 500:$0.8611
ZXMP3A16DN8TA
DISTI # ZXMP3A16DN8TA		Diodes IncorporatedTrans MOSFET P-CH 30V 5.5A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMP3A16DN8TA)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$0.6149
  • 1000:$0.5849
  • 2000:$0.5579
  • 3000:$0.5319
  • 5000:$0.5209
ZXMP3A16DN8TA
DISTI # 70438855		Diodes IncorporatedMOSFET Dual P-Channel 30V 5.5A SOIC8
RoHS: Compliant		0
  • 25:$1.4700
  • 50:$1.2700
  • 100:$1.1500
  • 250:$1.0600
ZXMP3A16DN8TA
DISTI # 522-ZXMP3A16DN8TA		Diodes IncorporatedMOSFET Dl 30V P-Chnl UMOS
RoHS: Compliant		490
  • 1:$1.3600
  • 10:$1.1600
  • 100:$0.8860
  • 500:$0.7830
ZXMP3A16DN8TA
DISTI # 7082466P		Zetex / Diodes IncMOSFET DUAL P-CHANNEL 30V 5.5A SOIC8, RL75
  • 25:£1.0060
  • 50:£0.9500
  • 250:£0.8740
  • 500:£0.7640
ZXMP3A16DN8TAZetex / Diodes Inc 1993
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    Verfügbarkeit
    Aktie:
    948
    Auf Bestellung:
    2931
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    Der aktuelle Preis von ZXMP3A16DN8TA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
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    ext. Preis
    1
    1,35 $
    1,35 $
    10
    1,15 $
    11,50 $
    100
    0,89 $
    88,60 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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