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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RJK1055DPB-00#J5 DISTI # RJK1055DPB-00#J5TR-ND | Renesas Electronics Corporation | MOSFET N-CH 100V 23A LFPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| RJK1055DPB-00#J5 DISTI # RJK1055DPB-00#J5CT-ND | Renesas Electronics Corporation | MOSFET N-CH 100V 23A LFPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| RJK1055DPB-00#J5 DISTI # RJK1055DPB-00#J5DKR-ND | Renesas Electronics Corporation | MOSFET N-CH 100V 23A LFPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| RJK1055DPB-00#J5 DISTI # RJK1055DPB-00#J5 | Renesas Electronics Corporation | Trans MOSFET N-CH 100V 23A 5-Pin(4+Tab) LFPAK T/R (Alt: RJK1055DPB-00#J5) RoHS: Compliant Min Qty: 1 Container: Tape and Reel | Europe - 0 |
|
| RJK1055DPB-00#J5 DISTI # 84R0375 | Renesas Electronics Corporation | N CHANNEL MOSFET, 100V, 23A, LFPAK-5,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:- RoHS Compliant: Yes | 3236 |
|
| RJK1055DPB-00#J5 DISTI # 968-RJK1055DPB-00#J5 | Renesas Electronics Corporation | MOSFET Power MOSFET RoHS: Compliant | 0 | |
| RJK1055DPB00J5 | Renesas Electronics Corporation | Power Field-Effect Transistor, 23A I(D), 100V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 512 | |
| RJK1055DPB-00#J5 DISTI # 1829611 | Renesas Electronics Corporation | MOSFET.N CH,100V,23A,LFPAK RoHS: Compliant | 3236 |
|
| RJK1055DPB-00#J5 DISTI # 1829611 | Renesas Electronics Corporation | MOSFET.N CH,100V,23A,LFPAK RoHS: Compliant | 3246 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: RJK1055DPB00J5 OMO.#: OMO-RJK1055DPB00J5-1190 |
Power Field-Effect Transistor, 23A I(D), 100V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |