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SI4483ADY-T1-GE3

SI4483ADY-T1-GE3
Mfr. #:
SI4483ADY-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 30V 19.2A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4483ADY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4483ADY-T1-GE3 DatasheetSI4483ADY-T1-GE3 Datasheet (P4-P6)SI4483ADY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI4483ADY-GE3
Gewichtseinheit
0.006596 oz
Montageart
SMD/SMT
Paket-Koffer
8-SOIC (0.154", 3.90mm Width)
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
8-SO
Aufbau
Single Quad Drain Triple Source
FET-Typ
MOSFET P-Kanal, Metalloxid
Leistung max
5.9W
Transistor-Typ
1 P-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
3900pF @ 15V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
19.2A (Tc)
Rds-On-Max-Id-Vgs
8.8 mOhm @ 10A, 10V
Vgs-th-Max-Id
2.6V @ 250μA
Gate-Lade-Qg-Vgs
135nC @ 10V
Pd-Verlustleistung
2.9 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
13 ns 28 ns
Anstiegszeit
13 ns 150 ns
Vgs-Gate-Source-Spannung
25 V
ID-Dauer-Drain-Strom
13.5 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Rds-On-Drain-Source-Widerstand
8.8 mOhms
Transistor-Polarität
P-Kanal
Typische-Ausschaltverzögerungszeit
49 ns 43 ns
Typische-Einschaltverzögerungszeit
14 ns 70 ns
Kanal-Modus
Erweiterung
Tags
SI4483, SI448, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET P-CH 30V 19.2A 8-Pin SOIC N T/R / MOSFET P-CH 30V 19.2A 8-SOIC
***ure Electronics
P-CH MOSFET SO-8 30V 8.5MOHM @ 10V ESD PROTECTED
***nell
MOSFET, P CH, -30V, -19.2A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-19.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0127ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-2.1V; Power Dissipation Pd:5.9W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
Teil # Mfg. Beschreibung Aktie Preis
SI4483ADY-T1-GE3
DISTI # V72:2272_09216513		Vishay IntertechnologiesTrans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R
RoHS: Compliant		2252
  • 1000:$0.5417
  • 500:$0.5785
  • 250:$0.6758
  • 100:$0.6777
  • 25:$0.8296
  • 10:$0.8328
  • 1:$0.9625
SI4483ADY-T1-GE3
DISTI # SI4483ADY-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 19.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5447In Stock
  • 1000:$0.5948
  • 500:$0.7534
  • 100:$0.9715
  • 10:$1.2290
  • 1:$1.3900
SI4483ADY-T1-GE3
DISTI # SI4483ADY-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 19.2A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5447In Stock
  • 1000:$0.5948
  • 500:$0.7534
  • 100:$0.9715
  • 10:$1.2290
  • 1:$1.3900
SI4483ADY-T1-GE3
DISTI # SI4483ADY-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 19.2A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 2500:$0.5390
SI4483ADY-T1-GE3
DISTI # 29754202		Vishay IntertechnologiesTrans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R
RoHS: Compliant		2500
  • 2500:$0.6688
SI4483ADY-T1-GE3
DISTI # 27148054		Vishay IntertechnologiesTrans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R
RoHS: Compliant		2252
  • 1000:$0.5417
  • 500:$0.5785
  • 250:$0.6758
  • 100:$0.6777
  • 25:$0.8296
  • 15:$0.8328
SI4483ADY-T1-GE3
DISTI # SI4483ADY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R (Alt: SI4483ADY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 7500
  • 2500:$4.7300
  • 5000:$3.2621
  • 7500:$2.4256
  • 12500:$1.9708
  • 25000:$1.7849
  • 62500:$1.7200
  • 125000:$1.6597
SI4483ADY-T1-GE3
DISTI # SI4483ADY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4483ADY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5089
  • 5000:$0.4939
  • 10000:$0.4739
  • 15000:$0.4609
  • 25000:$0.4479
SI4483ADY-T1-GE3
DISTI # 85W3209		Vishay IntertechnologiesTrans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 85W3209)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.7990
SI4483ADY-T1-GE3
DISTI # 97W2656		Vishay IntertechnologiesMOSFET Transistor, P Channel, -19.2 A, -30 V, 0.0127 ohm, -4.5 V, -2.1 V , RoHS Compliant: Yes4806
  • 1:$1.2300
  • 10:$1.0100
  • 25:$0.9310
  • 50:$0.8530
  • 100:$0.7740
  • 250:$0.7200
  • 500:$0.6660
SI4483ADY-T1-GE3
DISTI # 85W3209		Vishay IntertechnologiesMOSFET, P CHANNEL, -30V, 0.0127OHM, -19.2A, SOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-19.2A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0127ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:8Pins , RoHS Compliant: Yes4089
  • 1:$1.4800
  • 10:$1.2100
  • 25:$1.1200
  • 50:$1.0200
  • 100:$0.9290
  • 250:$0.8640
  • 500:$0.7990
SI4483ADY-T1-GE3.
DISTI # 30AC0165		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO0
  • 1:$0.5840
  • 2500:$0.5840
SI4483ADY-T1-GE3
DISTI # 781-SI4483ADY-GE3		Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs SO-8
RoHS: Compliant		4185
  • 1:$1.2300
  • 10:$1.0100
  • 100:$0.7740
  • 500:$0.6660
  • 1000:$0.5850
  • 2500:$0.5840
SI4483ADY-T1-GE3
DISTI # C1S803603345321		Vishay IntertechnologiesMOSFETs2500
  • 2500:$0.8130
SI4483ADY-T1-GE3
DISTI # 2335315		Vishay IntertechnologiesMOSFET, P CH, -30V, -19.2A, SOIC
RoHS: Compliant		5202
  • 1:$1.9500
  • 10:$1.6000
  • 100:$1.2300
  • 500:$1.0500
  • 1000:$0.9270
  • 2500:$0.9260
SI4483ADY-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs SO-8
RoHS: Compliant		Americas - 2500
  • 2500:$0.4970
  • 5000:$0.4700
  • 10000:$0.4540
SI4483ADY-T1-GE3
DISTI # 2335315		Vishay IntertechnologiesMOSFET, P CH, -30V, -19.2A, SOIC
RoHS: Compliant		5490
  • 5:£0.8680
  • 25:£0.7800
  • 100:£0.5980
  • 250:£0.5570
  • 500:£0.5150
Bild Teil # Beschreibung
SI4483ADY-T1-E3

Mfr.#: SI4483ADY-T1-E3

OMO.#: OMO-SI4483ADY-T1-E3-1190

 Neu und Original
SI4483ADY-T1-GE3

Mfr.#: SI4483ADY-T1-GE3

OMO.#: OMO-SI4483ADY-T1-GE3-VISHAY

 MOSFET P-CH 30V 19.2A 8-SOIC
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von SI4483ADY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,67 $
0,67 $
10
0,64 $
6,37 $
100
0,60 $
60,35 $
500
0,57 $
284,95 $
1000
0,54 $
536,40 $
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