UJ3C065030B3

UJ3C065030B3
Mfr. #:
UJ3C065030B3
Hersteller:
UnitedSiC
Beschreibung:
MOSFET 650V/30mOhm SiC CASCODE G3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
UJ3C065030B3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
UJ3C065030B3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
UnitedSiC
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
SMD/SMT
Paket / Koffer:
D2PAK-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
66 A
Rds On - Drain-Source-Widerstand:
35 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
51 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
250 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Serie:
UJ3C
Marke:
UnitedSiC
Abfallzeit:
15 ns
Produktart:
MOSFET
Anstiegszeit:
19 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
58 ns
Typische Einschaltverzögerungszeit:
32 ns
Tags
UJ3C06503, UJ3C0650, UJ3C0, UJ3C, UJ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Cascodes
UnitedSiC SiC Cascodes are the 3rd generation gate drive SiC devices that are a combination of high-performance SiC JFETs and cascode optimized MOSFETs. These SiC Cascodes are the enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The SiC Cascodes offer the best performance for the intrinsic diode forward drop (VSD) and recovery charge (QRR). These devices deliver ultra-low gate charge but also the best reverse recovery characteristics of any devices of similar ratings. 
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Mfr.#: CSD19538Q3AT

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Mfr.#: STB37N60DM2AG

OMO.#: OMO-STB37N60DM2AG

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Mfr.#: STB20N90K5

OMO.#: OMO-STB20N90K5

MOSFET N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a D2PAK package
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Mfr.#: UJ3C065080B3

OMO.#: OMO-UJ3C065080B3

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Mfr.#: CGA6P3X7R1E226M250AB

OMO.#: OMO-CGA6P3X7R1E226M250AB

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 25V 22uF 20% AEC-Q200
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Mfr.#: NTCALUG01A103F

OMO.#: OMO-NTCALUG01A103F

NTC Thermistors 10K 1% 38MM AWG24
STB20N90K5

Mfr.#: STB20N90K5

OMO.#: OMO-STB20N90K5-STMICROELECTRONICS

N-CHANNEL 900 V, 0.24 OHM TYP.,
Verfügbarkeit
Aktie:
732
Auf Bestellung:
2715
Menge eingeben:
Der aktuelle Preis von UJ3C065030B3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
29,76 $
29,76 $
5
28,42 $
142,10 $
10
27,54 $
275,40 $
25
25,30 $
632,50 $
50
24,71 $
1 235,50 $
100
23,52 $
2 352,00 $
250
21,58 $
5 395,00 $
500
20,54 $
10 270,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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