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IXFB44N100Q3

IXFB44N100Q3
Mfr. #:
IXFB44N100Q3
Hersteller:
Littelfuse
Beschreibung:
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/44A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFB44N100Q3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFB44N100Q3 DatasheetIXFB44N100Q3 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFB44N100Q3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
PLUS-264-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1 kV
Id - Kontinuierlicher Drainstrom:
44 A
Rds On - Drain-Source-Widerstand:
220 mOhms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
264 nC
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.56 kW
Aufbau:
Single
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXFB44N100
Transistortyp:
1 N-Channel
Marke:
IXYS
Produktart:
MOSFET
Anstiegszeit:
300 ns
Werkspackungsmenge:
25
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.056438 oz
Tags
IXFB4, IXFB, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFB44N100Q3
DISTI # V99:2348_15877098		IXYS CorporationTrans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264
RoHS: Compliant		13
  • 100:$24.0000
  • 25:$26.0700
  • 1:$30.9400
IXFB44N100Q3
DISTI # V36:1790_15877098		IXYS CorporationTrans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264
RoHS: Compliant		0
  • 500:$20.8900
  • 250:$21.5600
  • 100:$22.6400
  • 50:$23.9800
  • 25:$24.6900
  • 10:$26.9300
  • 5:$28.1300
  • 1:$29.4800
IXFB44N100Q3
DISTI # IXFB44N100Q3-ND		IXYS CorporationMOSFET N-CH 1000V 44A PLUS264
RoHS: Compliant
Min Qty: 1
Container: Tube		40In Stock
  • 100:$24.5374
  • 25:$26.4012
  • 10:$28.7310
  • 1:$31.0600
IXFB44N100Q3
DISTI # 26736439		IXYS CorporationTrans MOSFET N-CH 1KV 44A 3-Pin(3+Tab) PLUS 264
RoHS: Compliant		13
  • 100:$24.0000
  • 25:$26.0700
  • 1:$30.9400
IXFB44N100Q3
DISTI # 747-IXFB44N100Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/44A
RoHS: Compliant		66
  • 1:$31.0700
  • 5:$29.5200
  • 10:$28.7400
  • 25:$26.4100
  • 50:$25.2800
  • 100:$24.5400
  • 250:$22.5200
IXFB44N100Q3
DISTI # 8011373P		IXYS CorporationMOSFET NCH 1000V 44A Q3 HIPERFET PLUS264, TU35
  • 250:£18.2800
  • 50:£18.6500
  • 20:£19.3200
  • 10:£20.2200
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OMO.#: OMO-IDW30G65C5XKSA1

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SN74LVC1T45DCKR

Mfr.#: SN74LVC1T45DCKR

OMO.#: OMO-SN74LVC1T45DCKR

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TCLAMP3302N.TCT

Mfr.#: TCLAMP3302N.TCT

OMO.#: OMO-TCLAMP3302N-TCT-SEMTECH

 TVS DIODE 3.3V 25V SLP2626P10
IDW30G65C5XKSA1

Mfr.#: IDW30G65C5XKSA1

OMO.#: OMO-IDW30G65C5XKSA1-INFINEON-TECHNOLOGIES

 DIODE SCHOTTKY 650V 30A TO247-3
SN74LVC1T45DCKR

Mfr.#: SN74LVC1T45DCKR

OMO.#: OMO-SN74LVC1T45DCKR-TEXAS-INSTRUMENTS

 Neu und Original
IPW65R045C7FKSA1

Mfr.#: IPW65R045C7FKSA1

OMO.#: OMO-IPW65R045C7FKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 46A TO-247-3
Verfügbarkeit
Aktie:
36
Auf Bestellung:
2019
Menge eingeben:
Der aktuelle Preis von IXFB44N100Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
31,07 $
31,07 $
5
29,52 $
147,60 $
10
28,74 $
287,40 $
25
26,41 $
660,25 $
50
25,28 $
1 264,00 $
100
24,54 $
2 454,00 $
250
22,52 $
5 630,00 $
500
21,44 $
10 720,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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