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IRF4104PBF

IRF4104PBF
Mfr. #:
IRF4104PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 40V 120A 5.5mOhm 68nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF4104PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF4104PBF DatasheetIRF4104PBF Datasheet (P4-P6)IRF4104PBF Datasheet (P7-P9)IRF4104PBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
5.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
68 nC
Pd - Verlustleistung:
140 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001554010
Gewichtseinheit:
0.211644 oz
Tags
IRF4104P, IRF4104, IRF410, IRF41, IRF4, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4.3Milliohms;ID 120A;TO-220AB;PD 140W;-55de
***ure Electronics
Single N-Channel 40 V 5.5 mOhm 100 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH Si 40V 120A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ment14 APAC
MOSFET, N, 40V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:1.05°C/W; On State resistance @ Vgs = 10V:5.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:470A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 30 V 4.8 mOhm 15 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 30V 92A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 75 W
***nell
MOSFET, N CH, 30V, 78A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 75W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 92A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.8V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
Single N-Channel 30 V 9 mOhm 41 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***et
Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB
***(Formerly Allied Electronics)
MOSFET, 30V, 90A, 9 MOHM, 27 NC QG, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 30V, 90A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:120W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Junction to Case Thermal Resistance A:1.04°C/W; On State resistance @ Vgs = 10V:9ohm; Package / Case:TO-220AB; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***ark
Mosfet Transistor, N Channel, 77 A, 40 V, 6.2 Mohm, 10 V, 3 V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 40V, 77A, TO-220
***nell
MOSFET, N CH, 40V, 77A, TO-220; Transistor Polarity:N-Channel; Current Id Max:77A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.2mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:86W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (18-Jun-2010)
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 30 V 8.7 mOhm 36 nC HEXFET® Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 30V 150A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 140 W
***ment14 APAC
MOSFET, N CH, 30V, 78A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:150A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
***ark
RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ
***ure Electronics
N-Channel 30 V 5.9 mOhm PowerTrench Mosfet - TO-220AB
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***p One Stop Global
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Teil # Mfg. Beschreibung Aktie Preis
IRF4104PBF
DISTI # 30337596		Infineon Technologies AGTrans MOSFET N-CH Si 40V 120A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		893
  • 100:$0.5233
  • 50:$0.5260
IRF4104PBF
DISTI # 19258104		Infineon Technologies AGTrans MOSFET N-CH Si 40V 120A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		467
  • 52:$1.2150
IRF4104PBF
DISTI # IRF4104PBF-ND		Infineon Technologies AGMOSFET N-CH 40V 75A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		141In Stock
  • 1000:$0.8634
  • 500:$1.0420
  • 100:$1.3397
  • 10:$1.6670
  • 1:$1.8500
IRF4104PBF
DISTI # C1S322000480481		Infineon Technologies AGTrans MOSFET N-CH Si 40V 120A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		900
  • 500:$0.9400
  • 100:$1.0200
  • 25:$1.2400
  • 5:$1.5300
IRF4104PBF
DISTI # IRF4104PBF		Infineon Technologies AGTrans MOSFET N-CH 40V 120A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF4104PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 549
  • 1:$0.5929
  • 10:$0.5769
  • 25:$0.5619
  • 50:$0.5479
  • 100:$0.5339
  • 500:$0.5209
  • 1000:$0.5089
IRF4104PBF
DISTI # SP001554010		Infineon Technologies AGTrans MOSFET N-CH 40V 120A 3-Pin(3+Tab) TO-220AB (Alt: SP001554010)
RoHS: Compliant
Min Qty: 1		Europe - 2000
  • 1:€0.8949
  • 10:€0.7949
  • 25:€0.7159
  • 50:€0.6499
  • 100:€0.5959
  • 500:€0.5499
  • 1000:€0.5109
IRF4104PBF
DISTI # 63J7299		Infineon Technologies AGN CHANNEL MOSFET, 40V, 75A TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes467
  • 1:$0.9720
  • 10:$0.9720
  • 100:$0.9720
  • 500:$0.9480
  • 1000:$0.8870
  • 2500:$0.8370
  • 5000:$0.8220
IRF4104PBF.
DISTI # 27AC6870		Infineon Technologies AGTRENCH_MOSFETS ROHS COMPLIANT: YES0
  • 1:$1.6300
  • 10:$1.3900
  • 100:$1.1100
  • 500:$0.9480
  • 1000:$0.8870
  • 2500:$0.8370
  • 5000:$0.8220
IRF4104PBF
DISTI # 70017275		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 40V,RDS(ON) 4.3Milliohms,ID 120A,TO-220AB,PD 140W,-55de
RoHS: Compliant		0
  • 800:$2.9800
IRF4104PBF
DISTI # 942-IRF4104PBF		Infineon Technologies AGMOSFET MOSFT 40V 120A 5.5mOhm 68nC Qg
RoHS: Compliant		1095
  • 1:$1.6000
  • 10:$1.3600
  • 100:$1.0900
  • 500:$0.9480
  • 1000:$0.7850
IRF4104PBFInternational Rectifier 
RoHS: Not Compliant		750
  • 1000:$0.7100
  • 500:$0.7500
  • 100:$0.7800
  • 25:$0.8100
  • 1:$0.8700
IRF4104PBF
DISTI # 7165545		Infineon Technologies AGMOSFET N-CH 40V 120A TO-220AB, PK179
  • 5:£1.2400
  • 25:£0.9900
  • 50:£0.8900
  • 100:£0.7900
  • 250:£0.7740
IRF4104PBF
DISTI # IRF4104PBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,40V,120A,140W,TO220AB111
  • 1:$1.1500
  • 3:$1.0500
  • 10:$0.8800
  • 50:$0.7600
IRF4104PBF
DISTI # 8657670		Infineon Technologies AG 
RoHS: Compliant		0
  • 1:$2.5400
  • 10:$2.1600
  • 100:$2.1500
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IRF4104PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,54 $
1,54 $
10
1,31 $
13,10 $
100
1,05 $
105,00 $
500
0,92 $
459,00 $
1000
0,76 $
761,00 $
2000
0,71 $
1 416,00 $
5000
0,68 $
3 410,00 $
10000
0,66 $
6 560,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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