A2I25D012GNR1

A2I25D012GNR1
Mfr. #:
A2I25D012GNR1
Hersteller:
NXP Semiconductors
Beschreibung:
RF Amplifier Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
A2I25D012GNR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
A2I25D012GNR1 Mehr Informationen A2I25D012GNR1 Product Details
Produkteigenschaft
Attributwert
Hersteller
Freescale Semiconductor - NXP
Produktkategorie
HF-Verstärker
Serie
-
Verpackung
Band & Spule (TR)
Paket-Koffer
TO-270-15 Variant, Gull Wing
Frequenz
2.3GHz ~ 2.69GHz
Spannungsversorgung
26 V ~ 32 V
Lieferanten-Geräte-Paket
TO-270WBG-15
Stromversorgung
110mA
Gewinnen
33dB
Test-Frequenz
2.3GHz
P1dB
12dBm
Rauschzahl
-
HF-Typ
W-CDMA
Tags
A2I25D, A2I25, A2I2, A2I
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
Amplifier,2100 to 2900 MHz, 15.5 W, Typ Gain in dB is 33.2 @ 2690 MHz, 28 V, LDMOS, SOT1722
***ark
BL RF / Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V
***et
RF LDMOS WIDEBAND INTEGRATEDPOWER AMPLIFIERS
***i-Key
IC AMP W-CDMA 2.3-2.69GHZ TO270
***et Europe
Trans MOSFET 65V 15-Pin TO-270WBG T/R
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
Teil # Mfg. Beschreibung Aktie Preis
A2I25D012GNR1
DISTI # A2I25D012GNR1-ND
NXP SemiconductorsIC AMP W-CDMA 2.3-2.69GHZ TO270
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 500:$40.1177
A2I25D012GNR1
DISTI # A2I25D012GNR1
NXP SemiconductorsTrans MOSFET 65V 15-Pin TO-270WBG T/R - Tape and Reel (Alt: A2I25D012GNR1)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 500:$39.8900
  • 1000:$38.3900
  • 2000:$36.8900
  • 3000:$35.4900
  • 5000:$34.7900
A2I25D012GNR1
DISTI # 841-A2I25D012GNR1
NXP SemiconductorsRF Amplifier Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V
RoHS: Compliant
0
  • 500:$40.1200
A2I25D012GNR1
DISTI # A2I25D012GNR1
NXP SemiconductorsRF & MW POWER AMPLIFIER
RoHS: Compliant
47
  • 1:$61.2600
  • 10:$55.3700
  • 25:$52.3500
Bild Teil # Beschreibung
A2I25D025NR1

Mfr.#: A2I25D025NR1

OMO.#: OMO-A2I25D025NR1

RF Amplifier 2300-2690 MHz 2.5 W Avg., 28 V
A2I25D012NR1

Mfr.#: A2I25D012NR1

OMO.#: OMO-A2I25D012NR1

RF Amplifier A2I25D012N/FM15F///REEL 13 Q2 DP
A2I25D012GNR1

Mfr.#: A2I25D012GNR1

OMO.#: OMO-A2I25D012GNR1

RF Amplifier A2I25D012GN/FM15F///REEL 13 Q2 DP
A2I25D025GNR1

Mfr.#: A2I25D025GNR1

OMO.#: OMO-A2I25D025GNR1

RF Amplifier 2300-2690 MHz 2.5 W Avg., 28 V
A2I25D025NR1

Mfr.#: A2I25D025NR1

OMO.#: OMO-A2I25D025NR1-NXP-SEMICONDUCTORS

RF Amplifier 2300-2690 MHz 2.5 W Avg., 28 V
A2I25D025GNR1

Mfr.#: A2I25D025GNR1

OMO.#: OMO-A2I25D025GNR1-NXP-SEMICONDUCTORS

RF Amplifier 2300-2690 MHz 2.5 W Avg., 28 V
A2I25D012GNR1

Mfr.#: A2I25D012GNR1

OMO.#: OMO-A2I25D012GNR1-NXP-SEMICONDUCTORS

RF Amplifier Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V
A2I25D012NR1

Mfr.#: A2I25D012NR1

OMO.#: OMO-A2I25D012NR1-NXP-SEMICONDUCTORS

RF Amplifier Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V
A2I25D025N

Mfr.#: A2I25D025N

OMO.#: OMO-A2I25D025N-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von A2I25D012GNR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
52,18 $
52,18 $
10
49,58 $
495,76 $
100
46,97 $
4 696,65 $
500
44,36 $
22 178,65 $
1000
41,75 $
41 748,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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