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2SC6026MFVGR,L3F

2SC6026MFVGR,L3F
Mfr. #:
2SC6026MFVGR,L3F
Hersteller:
Toshiba
Beschreibung:
Bipolar Transistors - BJT VESM PLN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SC6026MFVGR,L3F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2SC6026MFVGR,L3F Datasheet2SC6026MFVGR,L3F Datasheet (P4)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
SOT-723-3
Polarität des Transistors:
NPN
Kollektor- Emitterspannung VCEO Max:
50 V
Kollektor- Basisspannung VCBO:
60 V
Emitter- Basisspannung VEBO:
5 V
Kollektor-Emitter-Sättigungsspannung:
0.15 V
Maximaler DC-Kollektorstrom:
150 mA
Bandbreitenprodukt fT gewinnen:
60 MHz
Serie:
2SC6026
DC-Stromverstärkung hFE Max:
400
Höhe:
0.5 mm
Länge:
1.2 mm
Verpackung:
Spule
Breite:
0.8 mm
Marke:
Toshiba
Kontinuierlicher Kollektorstrom:
150 mA
DC-Kollektor/Basisverstärkung hfe Min:
120
Pd - Verlustleistung:
150 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
8000
Unterkategorie:
Transistoren
Tags
2SC6026MFVG, 2SC6026M, 2SC6026, 2SC602, 2SC60, 2SC6, 2SC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin VESM T/R / TRANS NPN 50V 0.15A VESM
***enic
50V 150mW 150mA 200@2mA,6V 60MHz 150mV@100mA,10mA NPN +150¡æ@(Tj) SOT-723 Bipolar Transistors - BJT ROHS
***
VESM PLN ACTIVE
***ure Electronics
Bipolar Transistors - BJT NPN 50V 150MA
***et
Trans GP BJT NPN 50V 0.15A 3-Pin VMT T/R
***S
French Electronic Distributor since 1988
***el Electronic
Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
***i-Key
TRANS PREBIAS NPN 50V 0.1A VESM
***ure Electronics
Bipolar Transistors - BJT NPN General Purpose Amplification Transistor
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***et
Trans GP BJT NPN 50V 0.1A 3-Pin SOT-723 T/R
***nell
TRANSISTOR, NPN, 50V, 0.1A, SOT-723; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 350MHz; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-723; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
50V 150mA 180MHz 260mW Surface Mount Bipolar (BJT) Transistor SOT-723
***r Electronics
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***ical
Trans GP BJT NPN 50V 0.15A 260mW Automotive 3-Pin SOT-723 T/R
***p One Stop
Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R
***ark
Transistor; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:-; Resistor Ratio, R1 / R2:-; Rf Transistor Rohs Compliant: Yes
***nell
TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: VMT; No. of Pins: 3 Pin; Product Range: DTC114T Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 10mA; DC Collector Current: 10mA; DC Current Gain hFE: 250hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Termination Type: Surface Mount Device; Transistor Case Style: VMT; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***emi
NPN Bipolar Digital Transistor (BRT)
***ical
Trans Digital BJT NPN 50V 100mA 600mW 3-Pin SOT-723 T/R
***ark
Brt Transistor, 50V, 22K/47Kohm, Sot-723; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:22Kohm; Base-Emitter Resistor R2:47Kohm Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
2SC6026MFVGR,L3F
DISTI # V72:2272_13897368		Toshiba America Electronic ComponentsX34 PB-F VESM PLN (LF) TRANSIS113
  • 100:$0.0535
  • 25:$0.1293
  • 10:$0.1307
  • 1:$0.1995
2SC6026MFVGR,L3F
DISTI # 2SC6026MFVGRL3FCT-ND		Toshiba America Electronic ComponentsTRANS NPN 50V 0.15A VESM
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		12391In Stock
  • 2500:$0.0373
  • 1000:$0.0414
  • 500:$0.0608
  • 250:$0.0714
  • 100:$0.1136
  • 25:$0.1460
  • 10:$0.2030
  • 1:$0.2200
2SC6026MFVGR,L3F
DISTI # 2SC6026MFVGRL3FDKR-ND		Toshiba America Electronic ComponentsTRANS NPN 50V 0.15A VESM
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		12391In Stock
  • 2500:$0.0373
  • 1000:$0.0414
  • 500:$0.0608
  • 250:$0.0714
  • 100:$0.1136
  • 25:$0.1460
  • 10:$0.2030
  • 1:$0.2200
2SC6026MFVGR,L3F
DISTI # 2SC6026MFVGRL3FTR-ND		Toshiba America Electronic ComponentsTRANS NPN 50V 0.15A VESM
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)		8000In Stock
  • 200000:$0.0210
  • 56000:$0.0236
  • 24000:$0.0252
  • 16000:$0.0268
  • 8000:$0.0315
2SC6026MFVGR,L3F
DISTI # 30612547		Toshiba America Electronic ComponentsX34 PB-F VESM PLN (LF) TRANSIS7890
  • 1000:$0.0562
  • 500:$0.0572
  • 200:$0.0593
  • 156:$0.0680
2SC6026MFVGR,L3F
DISTI # 2SC6026MFVGR,L3F		Toshiba America Electronic ComponentsTrans GP BJT NPN 50V 0.15A 3-Pin VESM Embossed T/R - Tape and Reel (Alt: 2SC6026MFVGR,L3F)
RoHS: Compliant
Min Qty: 8000
Container: Reel		Americas - 0
  • 8000:$0.0235
  • 16000:$0.0221
  • 32000:$0.0209
  • 48000:$0.0198
  • 80000:$0.0192
2SC6026MFVGR,L3F
DISTI # 757-2SC6026MFVGRL3F		Toshiba America Electronic ComponentsBipolar Transistors - BJT VESM PLN
RoHS: Compliant		11600
  • 1:$0.2200
  • 10:$0.1390
  • 100:$0.0580
  • 1000:$0.0400
  • 2500:$0.0300
  • 8000:$0.0260
  • 24000:$0.0240
  • 48000:$0.0230
  • 96000:$0.0200
2SC6026MFVGR,L3F
DISTI # C1S751201019033		Toshiba America Electronic ComponentsGP BJT7890
  • 1000:$0.0441
  • 500:$0.0449
  • 200:$0.0465
  • 100:$0.0533
  • 50:$0.1290
2SC6026MFVGR,L3FToshiba America Electronic ComponentsBipolar Transistors - BJT VESM PLN
RoHS: Compliant		Americas -
    2SC6026MFVGRL3FToshiba America Electronic ComponentsBipolar Transistors - BJT VESM PLN ACTIVE
    RoHS: Compliant    		Americas -
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      Verfügbarkeit
      Aktie:
      12
      Auf Bestellung:
      1995
      Menge eingeben:
      Der aktuelle Preis von 2SC6026MFVGR,L3F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,22 $
      0,22 $
      10
      0,14 $
      1,39 $
      100
      0,06 $
      5,80 $
      1000
      0,04 $
      40,00 $
      2500
      0,03 $
      75,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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