IRFH5220TR2PBF

IRFH5220TR2PBF
Mfr. #:
IRFH5220TR2PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 200V 3.8A PQFN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFH5220TR2PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IRFH52, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package
***ical
Trans MOSFET N-CH 200V 3.8A 8-Pin PQFN EP T/R
***ied Electronics & Automation
MOSFET N-Ch 200V 3.8A HEXFET PQFN8EP
***i-Key
MOSFET N-CH 200V 3.8A PQFN
***trelec
MOSFET [IR] IRFH5220TR2PBF MOSFET
***ark
N CH MOSFET, 200V, 3.8A, 8-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; No. of Pins:8 ;RoHS Compliant: Yes
***nell
MOSFET,W DIO,N CH,200V,3.8A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; Voltage Vgs Max:20V
***ment14 APAC
MOSFET,W DIO,N CH,200V,3.8A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
IRFH5220TR2PBF
DISTI # IRFH5220TR2PBFCT-ND
Infineon Technologies AGMOSFET N-CH 200V 3.8A PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    IRFH5220TR2PBF
    DISTI # IRFH5220TR2PBFDKR-ND
    Infineon Technologies AGMOSFET N-CH 200V 3.8A PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IRFH5220TR2PBF
      DISTI # 942-IRFH5220TR2PBF
      Infineon Technologies AGMOSFET MOSFT 200V 20A 100mOhm 20nC Qg
      RoHS: Compliant
      0
        IRFH5220TR2PBFInternational Rectifier 
        RoHS: Compliant
        800
          Bild Teil # Beschreibung
          IRFH5220TR2PBF

          Mfr.#: IRFH5220TR2PBF

          OMO.#: OMO-IRFH5220TR2PBF

          MOSFET MOSFT 200V 20A 100mOhm 20nC Qg
          IRFH5220TR2PBF

          Mfr.#: IRFH5220TR2PBF

          OMO.#: OMO-IRFH5220TR2PBF-INFINEON-TECHNOLOGIES

          MOSFET N-CH 200V 3.8A PQFN
          IRFH5220TRPBF

          Mfr.#: IRFH5220TRPBF

          OMO.#: OMO-IRFH5220TRPBF-INFINEON-TECHNOLOGIES

          RF Bipolar Transistors MOSFET 200V 1 N-CH HEXFET 99.9mOhms 20nC
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          2500
          Menge eingeben:
          Der aktuelle Preis von IRFH5220TR2PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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