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IPB031N08N5ATMA1

IPB031N08N5ATMA1
Mfr. #:
IPB031N08N5ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 80V 120A D2PAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB031N08N5ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB031N08N5ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
2.7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
87 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
167 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 5
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
76 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
18 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
37 ns
Typische Einschaltverzögerungszeit:
18 ns
Teil # Aliase:
IPB031N08N5 SP001227048
Gewichtseinheit:
0.139332 oz
Tags
IPB031, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ark
Mosfet, N-Ch, 80V, 120A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0027Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Teil # Mfg. Beschreibung Aktie Preis
IPB031N08N5ATMA1
DISTI # V72:2272_06383299		Infineon Technologies AGTrans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		86
  • 25:$2.1290
  • 10:$2.1340
  • 1:$2.4370
IPB031N08N5ATMA1
DISTI # IPB031N08N5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1857In Stock
  • 500:$1.9767
  • 100:$2.4411
  • 10:$2.9770
  • 1:$3.3300
IPB031N08N5ATMA1
DISTI # IPB031N08N5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1857In Stock
  • 500:$1.9767
  • 100:$2.4411
  • 10:$2.9770
  • 1:$3.3300
IPB031N08N5ATMA1
DISTI # IPB031N08N5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$1.6185
IPB031N08N5ATMA1
DISTI # 30577658		Infineon Technologies AGTrans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 500:$2.1165
  • 100:$2.4225
  • 50:$2.5882
  • 10:$3.0728
  • 8:$3.6082
IPB031N08N5ATMA1
DISTI # 26885774		Infineon Technologies AGTrans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		86
  • 25:$2.1290
  • 10:$2.1340
  • 5:$2.4370
IPB031N08N5ATMA1
DISTI # IPB031N08N5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB031N08N5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.4900
  • 2000:$1.3900
  • 4000:$1.3900
  • 6000:$1.2900
  • 10000:$1.2900
IPB031N08N5ATMA1
DISTI # SP001227048		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: SP001227048)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.6900
  • 2000:€1.3900
  • 4000:€1.2900
  • 6000:€1.1900
  • 10000:€1.0900
IPB031N08N5ATMA1
DISTI # 13AC9025		Infineon Technologies AGMOSFET, N-CH, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
  • 1:$2.7900
  • 10:$2.3700
  • 25:$2.2600
  • 50:$2.1600
  • 100:$2.0500
  • 250:$1.9500
  • 500:$1.7500
IPB031N08N5
DISTI # 726-IPB031N08N5		Infineon Technologies AGMOSFET N-Ch 80V 120A D2PAK-2
RoHS: Compliant		0
  • 1:$2.7900
  • 10:$2.3700
  • 100:$2.0500
  • 250:$1.9500
  • 500:$1.7500
  • 1000:$1.4800
IPB031N08N5ATMA1
DISTI # 726-IPB031N08N5ATMA1		Infineon Technologies AGMOSFET N-Ch 80V 120A D2PAK-2
RoHS: Compliant		0
  • 1:$2.7900
  • 10:$2.3700
  • 100:$2.0500
  • 250:$1.9500
  • 500:$1.7500
  • 1000:$1.4800
IPB031N08N5ATMA1
DISTI # C1S322000644751		Infineon Technologies AGMOSFETs86
  • 25:$2.1290
  • 10:$2.1340
  • 1:$2.4370
IPB031N08N5ATMA1
DISTI # C1S322000456855		Infineon Technologies AGMOSFETs1000
  • 1000:$1.3800
  • 500:$1.6600
  • 100:$1.9000
  • 50:$2.0300
  • 10:$2.4100
  • 1:$2.8300
IPB031N08N5ATMA1
DISTI # 2725838		Infineon Technologies AGMOSFET, N-CH, 80V, 120A, TO-263
RoHS: Compliant		0
  • 1:£2.4000
  • 10:£1.8100
  • 100:£1.5700
  • 250:£1.4900
  • 500:£1.3400
IPB031N08N5ATMA1
DISTI # 2725838		Infineon Technologies AGMOSFET, N-CH, 80V, 120A, TO-263
RoHS: Compliant		0
  • 1:$3.1100
  • 10:$2.9100
  • 100:$2.5800
  • 500:$2.4400
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Mfr.#: LTC6811IG-2#3ZZPBF

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OMO.#: OMO-IRLML2502TRPBF-INFINEON-TECHNOLOGIES

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OMO.#: OMO-IRLML5103TRPBF-INFINEON-TECHNOLOGIES

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IPB031N08N5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,78 $
2,78 $
10
2,36 $
23,60 $
100
2,05 $
205,00 $
250
1,94 $
485,00 $
500
1,74 $
870,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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