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SI7900AEDN-T1-GE3

SI7900AEDN-T1-GE3
Mfr. #:
SI7900AEDN-T1-GE3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7900AEDN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI7900AEDN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Arrays
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI7900AEDN-GE3
Montageart
SMD/SMT
Handelsname
TrenchFET/PowerPAK
Paket-Koffer
PowerPAKR 1212-8 Dual
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
PowerPAKR 1212-8 Dual
Aufbau
Dual
FET-Typ
2 N-Channel (Dual) Common Drain
Leistung max
1.5W
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
20V
Eingangskapazität-Ciss-Vds
-
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
6A
Rds-On-Max-Id-Vgs
26 mOhm @ 8.5A, 4.5V
Vgs-th-Max-Id
900mV @ 250μA
Gate-Lade-Qg-Vgs
16nC @ 4.5V
Pd-Verlustleistung
1.5 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
1300 ns
Anstiegszeit
1300 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
6 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Widerstand
26 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
8600 ns
Typische-Einschaltverzögerungszeit
850 ns
Kanal-Modus
Erweiterung
Tags
SI7900AEDN-T1, SI7900AEDN-T, SI7900AE, SI7900A, SI7900, SI790, SI79, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI7900AEDN-T1-GE3 Dual N-channel MOSFET Transistor; 6 A; 20V; 8-Pin PowerPAK 1212
***Components
In a Pack of 10, Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 Vishay SI7900AEDN-T1-GE3
***ical
Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET 2N-CH 20V 6A PPAK 1212-8
Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Teil # Mfg. Beschreibung Aktie Preis
SI7900AEDN-T1-GE3
DISTI # SI7900AEDN-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6In Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
SI7900AEDN-T1-GE3
DISTI # SI7900AEDN-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6In Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
SI7900AEDN-T1-GE3
DISTI # SI7900AEDN-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.5236
SI7900AEDN-T1-GE3
DISTI # SI7900AEDN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7900AEDN-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.4939
  • 6000:$0.4799
  • 12000:$0.4599
  • 18000:$0.4469
  • 30000:$0.4349
SI7900AEDN-T1-GE3
DISTI # 70617004		Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8
RoHS: Compliant		0
  • 300:$0.8200
  • 600:$0.7500
  • 1500:$0.6900
  • 3000:$0.6100
SI7900AEDN-T1-GE3
DISTI # 781-SI7900AEDN-GE3		Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs PowerPAK 1212-8
RoHS: Compliant		2990
  • 1:$1.1900
  • 10:$0.9800
  • 100:$0.7520
  • 500:$0.6470
  • 1000:$0.5100
  • 3000:$0.4760
SI7900AEDN-T1-GE3Vishay Intertechnologies 960
    Bild Teil # Beschreibung
    SI7900AEDN-T1-E3

    Mfr.#: SI7900AEDN-T1-E3

    OMO.#: OMO-SI7900AEDN-T1-E3

    		 MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
    SI7900AEDN-T1-GE3

    Mfr.#: SI7900AEDN-T1-GE3

    OMO.#: OMO-SI7900AEDN-T1-GE3

    		 MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
    SI7900AEDN-T1-E3

    Mfr.#: SI7900AEDN-T1-E3

    OMO.#: OMO-SI7900AEDN-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 8.5A 1.5W
    SI7900AEDN-T1-GE3

    Mfr.#: SI7900AEDN-T1-GE3

    OMO.#: OMO-SI7900AEDN-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
    SI7900AEDN

    Mfr.#: SI7900AEDN

    OMO.#: OMO-SI7900AEDN-1190

    		 Neu und Original
    SI7900AEDN-T

    Mfr.#: SI7900AEDN-T

    OMO.#: OMO-SI7900AEDN-T-1190

    		 Neu und Original
    SI7900AEDN-T1

    Mfr.#: SI7900AEDN-T1

    OMO.#: OMO-SI7900AEDN-T1-1190

    		 Neu und Original
    SI7900AEDN-T1-E3 GE3

    Mfr.#: SI7900AEDN-T1-E3 GE3

    OMO.#: OMO-SI7900AEDN-T1-E3-GE3-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von SI7900AEDN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,65 $
    0,65 $
    10
    0,62 $
    6,20 $
    100
    0,59 $
    58,71 $
    500
    0,55 $
    277,25 $
    1000
    0,52 $
    521,90 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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