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STP11N52K3

STP11N52K3
Mfr. #:
STP11N52K3
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors MOSFET N-Ch 525V 0.41 Ohm 10A SuperMESH3 125w
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STP11N52K3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STP11N52K3 Mehr Informationen STP11N52K3 Product Details
Produkteigenschaft
Attributwert
Hersteller
ST
Produktkategorie
IC-Chips
Tags
STP11N, STP11, STP1, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 525V 10A 3-Pin(3+Tab) TO-220 Tube
***Components
MOSFET N-Channel 525V 10A TO220
***i-Key
MOSFET N-CH 525V 10A TO220
***ark
MOSFET, N CH, 525V, 10A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:525V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; MSL:- ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 525V, 10A, TO 220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:525V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
***nell
MOSFET, CANALE N, 525V, 10A, TO 220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:10A; Tensione Drain Source Vds:525V; Resistenza di Attivazione Rds(on):0.41ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.75V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015); Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C
Teil # Mfg. Beschreibung Aktie Preis
STP11N52K3
DISTI # 497-11870-5-ND		STMicroelectronicsMOSFET N-CH 525V 10A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		598In Stock
  • 500:$1.9173
  • 100:$2.3678
  • 50:$2.5988
  • 1:$3.2300
STP11N52K3
DISTI # 511-STP11N52K3		STMicroelectronicsMOSFET N-Ch 525V 0.41 Ohm 10A SuperMESH3 125w
RoHS: Compliant		0
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von STP11N52K3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,88 $
    2,88 $
    10
    2,73 $
    27,32 $
    100
    2,59 $
    258,84 $
    500
    2,44 $
    1 222,30 $
    1000
    2,30 $
    2 300,80 $
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