IXFN90N85X

IXFN90N85X
Mfr. #:
IXFN90N85X
Hersteller:
Littelfuse
Beschreibung:
MOSFET 850V/90A Ultra Junction X-Class
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN90N85X Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN90N85X DatasheetIXFN90N85X Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFN90N85X Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Chassishalterung
Paket / Koffer:
SOT-227-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
850 V
Id - Kontinuierlicher Drainstrom:
90 A
Rds On - Drain-Source-Widerstand:
41 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
340 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.2 kW
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
X-Klasse
Transistortyp:
1 N-Channel
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
37 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
10
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
126 ns
Typische Einschaltverzögerungszeit:
50 ns
Gewichtseinheit:
1.058219 oz
Tags
IXFN90, IXFN9, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 850V 90A 4-Pin SOT-227B
***i-Key
850V/90A ULT JUNC X-C HIPERFET P
X-Class 850V - 1000V Power MOSFETs with HiPerFET™
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Teil # Mfg. Beschreibung Aktie Preis
IXFN90N85X
DISTI # IXFN90N85X-ND
IXYS Corporation850V/90A ULT JUNC X-C HIPERFET P
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 100:$31.8450
  • 30:$33.9680
  • 10:$36.7280
  • 1:$39.2800
IXFN90N85X
DISTI # 747-IXFN90N85X
IXYS CorporationMOSFET 850V/90A Ultra Junction X-Class
RoHS: Compliant
0
  • 1:$39.2700
  • 5:$37.9000
  • 10:$36.7200
  • 25:$33.9700
  • 50:$32.9600
  • 100:$31.8400
  • 200:$29.7200
IXFN90N85X
DISTI # 1464248
IXYS CorporationULTRA JUNCTION MOSFET 90A 850V SOT227, TU15
  • 10:£25.3680
Bild Teil # Beschreibung
KSZ9897RTXI-TR

Mfr.#: KSZ9897RTXI-TR

OMO.#: OMO-KSZ9897RTXI-TR

Ethernet ICs 7-port GigE Managed Switch w/RGMII/MII/RMII(x2)
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Mfr.#: C4D15120D

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OMO.#: OMO-LPS35HWTR

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Mfr.#: KSZ9897RTXI-TR

OMO.#: OMO-KSZ9897RTXI-TR-MICROCHIP-TECHNOLOGY

IC ETHERNET SWITCH 7PORT 128TQFP
44133-0408

Mfr.#: 44133-0408

OMO.#: OMO-44133-0408-1190

Headers & Wire Housings 3.0 Floating Rec 4 Ckt HF
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Mfr.#: LPS35HWTR

OMO.#: OMO-LPS35HWTR-STMICROELECTRONICS

MEMS PRESSURE SENSOR: 260-1260 H
M80-2060005

Mfr.#: M80-2060005

OMO.#: OMO-M80-2060005-HARWIN

Headers & Wire Housings LG BORE FML SIGNAL 22AWG 6P / 8.5A MAX
V300A28T500BL

Mfr.#: V300A28T500BL

OMO.#: OMO-V300A28T500BL-VICOR

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Mfr.#: UMK105CG181JVHF

OMO.#: OMO-UMK105CG181JVHF-TAIYO-YUDEN

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C4D15120D

Mfr.#: C4D15120D

OMO.#: OMO-C4D15120D-WOLFSPEED

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 15A
Verfügbarkeit
Aktie:
80
Auf Bestellung:
2063
Menge eingeben:
Der aktuelle Preis von IXFN90N85X dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
39,27 $
39,27 $
5
37,90 $
189,50 $
10
36,72 $
367,20 $
25
33,97 $
849,25 $
50
32,96 $
1 648,00 $
100
31,84 $
3 184,00 $
200
29,72 $
5 944,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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