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IRLR3636TRPBF

IRLR3636TRPBF
Mfr. #:
IRLR3636TRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 60V 50A DPAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLR3636TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
FETs - Einzeln
Serie
HEXFETR
Verpackung
Digi-ReelR Alternative Verpackung
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3, DPak (2 Leads + Tab), SC-63
Technologie
Si
Betriebstemperatur
-55°C ~ 175°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
D-Pak
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
143W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
60V
Eingangskapazität-Ciss-Vds
3779pF @ 50V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
50A (Tc)
Rds-On-Max-Id-Vgs
6.8 mOhm @ 50A, 10V
Vgs-th-Max-Id
2.5V @ 100μA
Gate-Lade-Qg-Vgs
49nC @ 4.5V
Pd-Verlustleistung
143 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
69 ns
Anstiegszeit
216 ns
Vgs-Gate-Source-Spannung
16 V
ID-Dauer-Drain-Strom
99 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Vgs-th-Gate-Source-Threshold-Voltage
2.5 V
Rds-On-Drain-Source-Widerstand
6.8 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
43 ns
Typische-Einschaltverzögerungszeit
45 ns
Qg-Gate-Ladung
33 nC
Vorwärts-Transkonduktanz-Min
31 S
Kanal-Modus
Erweiterung
Tags
IRLR3636TRP, IRLR3636T, IRLR36, IRLR3, IRLR, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon
Benefits: RoHS Compliant; Logic Level | Target Applications: AC-DC; Battery Operated Drive
***ure Electronics
Single N-Channel 60 V 8.3 mOhm 49 nC HEXFET® Power Mosfet - TO-252-3
***ied Electronics & Automation
MOSFET, 60V, 99A, 6.8 MOHM, 33 NC QG, LOGIC LEVEL, D-PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Teil # Mfg. Beschreibung Aktie Preis
IRLR3636TRPBF
DISTI # C1S327400969413		Infineon Technologies AGTrans MOSFET N-CH Si 60V 99A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		1670
  • 200:$0.5710
  • 100:$0.5750
  • 50:$0.6500
  • 10:$0.8950
  • 5:$1.0600
IRLR3636TRPBF
DISTI # IRLR3636TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 60V 50A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		25322In Stock
  • 1000:$0.9584
  • 500:$1.1356
  • 100:$1.4309
  • 10:$1.7560
  • 1:$1.9300
IRLR3636TRPBF
DISTI # IRLR3636TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		25322In Stock
  • 1000:$0.9584
  • 500:$1.1356
  • 100:$1.4309
  • 10:$1.7560
  • 1:$1.9300
IRLR3636TRPBF
DISTI # IRLR3636TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 60V 50A DPAK
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		24000In Stock
  • 2000:$0.8732
IRLR3636TRPBF
DISTI # IRLR3636TRPBF		Infineon Technologies AGTrans MOSFET N-CH 60V 99A 3-Pin(2+Tab) DPAK T/R (Alt: IRLR3636TRPBF)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel		Asia - 0
  • 2000:$0.5888
  • 4000:$0.5646
  • 6000:$0.5570
  • 10000:$0.5353
  • 20000:$0.5284
  • 50000:$0.5152
  • 100000:$0.5026
IRLR3636TRPBF
DISTI # IRLR3636TRPBF		Infineon Technologies AGTrans MOSFET N-CH 60V 99A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR3636TRPBF)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 2000:$0.5999
  • 4000:$0.5789
  • 8000:$0.5579
  • 12000:$0.5389
  • 20000:$0.5289
IRLR3636TRPBF
DISTI # 97Y1847		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, TO-252AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes54
  • 1:$1.5400
  • 10:$1.3100
  • 25:$1.2200
  • 50:$1.1400
  • 100:$1.0500
  • 250:$0.9820
  • 500:$0.9130
  • 1000:$0.7560
IRLR3636TRPBF
DISTI # 70019860		Infineon Technologies AGIRLR3636TRPBF N-channel MOSFET Transistor,99 A,60 V,3-Pin DPAK
RoHS: Compliant		0
  • 2000:$1.4700
IRLR3636TRPBFInfineon Technologies AGSingle N-Channel 60 V 8.3 mOhm 49 nC HEXFET Power Mosfet - TO-252-3
RoHS: Compliant		2000Reel
  • 2000:$0.6400
IRLR3636TRPBF
DISTI # 942-IRLR3636TRPBF		Infineon Technologies AGMOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC
RoHS: Compliant		2938
  • 1:$1.5400
  • 10:$1.3100
  • 100:$1.0500
  • 500:$0.9130
  • 1000:$0.7560
IRLR3636TRPBF
DISTI # 8303372		Infineon Technologies AGHEXFET N-CH MOSFET 99A 60V DPAK, PK170
  • 10:£0.9090
  • 100:£0.7730
  • 500:£0.6820
  • 1000:£0.5910
  • 2000:£0.5790
IRLR3636TRPBF
DISTI # 8303372P		Infineon Technologies AGHEXFET N-CH MOSFET 99A 60V DPAK, RL1630
  • 100:£0.7730
  • 500:£0.6820
  • 1000:£0.5910
  • 2000:£0.5790
IRLR3636TRPBF
DISTI # IRLR3636PBF-GURT		Infineon Technologies AGN-LogL 60V 50A 143W 0,0068R TO252AA
RoHS: Compliant		1700
  • 50:€0.5540
  • 100:€0.4940
  • 500:€0.4640
  • 3000:€0.4470
IRLR3636TRPBF
DISTI # TMOSP12642		Infineon Technologies AGN-CH 60V 99A 6,8mOhm TO252
RoHS: Compliant		Stock DE - 2000Stock US - 0
  • 2000:$0.8040
  • 4000:$0.7572
  • 6000:$0.7110
  • 8000:$0.6425
  • 12000:$0.6195
IRLR3636TRPBF
DISTI # 2617412		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, TO-252AA-3
RoHS: Compliant		54
  • 1:$2.9200
  • 10:$2.6400
  • 100:$2.1200
  • 500:$1.6500
  • 1000:$1.3700
IRLR3636TRPBF
DISTI # 2617412		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, TO-252AA-3
RoHS: Compliant		983
  • 5:£0.9270
  • 25:£0.8580
  • 100:£0.7880
  • 250:£0.7420
  • 500:£0.6960
IRLR3636TRPBF
DISTI # XSFP00000050588		Infineon Technologies AG 
RoHS: Compliant		5384
  • 2000:$1.2800
  • 5384:$1.1600
Bild Teil # Beschreibung
IRLR3636TRPBF

Mfr.#: IRLR3636TRPBF

OMO.#: OMO-IRLR3636TRPBF

 MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC
IRLR3636TRLPBF

Mfr.#: IRLR3636TRLPBF

OMO.#: OMO-IRLR3636TRLPBF

 MOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl
IRLR3636PBF

Mfr.#: IRLR3636PBF

OMO.#: OMO-IRLR3636PBF

 MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC
IRLR3636

Mfr.#: IRLR3636

OMO.#: OMO-IRLR3636-1190

 Neu und Original
IRLR3636PBF

Mfr.#: IRLR3636PBF

OMO.#: OMO-IRLR3636PBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 50A D-PAK
IRLR3636PBF , 2SK2154

Mfr.#: IRLR3636PBF , 2SK2154

OMO.#: OMO-IRLR3636PBF-2SK2154-1190

 Neu und Original
IRLR3636TRPBF

Mfr.#: IRLR3636TRPBF

OMO.#: OMO-IRLR3636TRPBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 50A DPAK
IRLR3636TRPBF,IRLR3636PB

Mfr.#: IRLR3636TRPBF,IRLR3636PB

OMO.#: OMO-IRLR3636TRPBF-IRLR3636PB-1190

 Neu und Original
IRLR3636TRRPBF

Mfr.#: IRLR3636TRRPBF

OMO.#: OMO-IRLR3636TRRPBF-1190

 Neu und Original
IRLR3636TRLPBF

Mfr.#: IRLR3636TRLPBF

OMO.#: OMO-IRLR3636TRLPBF-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von IRLR3636TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,67 $
0,67 $
10
0,63 $
6,34 $
100
0,60 $
60,06 $
500
0,57 $
283,60 $
1000
0,53 $
533,90 $
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