OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

MRF7S19100NBR1

MRF7S19100NBR1
Mfr. #:
MRF7S19100NBR1
Hersteller:
NXP Semiconductors
Beschreibung:
RF MOSFET Transistors 1990MHZ 29W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRF7S19100NBR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MRF7S19100NBR1 Mehr Informationen MRF7S19100NBR1 Product Details
Produkteigenschaft
Attributwert
Hersteller
FREESCALE
Produktkategorie
IC-Chips
Tags
MRF7S1910, MRF7S191, MRF7S19, MRF7S1, MRF7S, MRF7, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V
***et
Transistor RF FET N-CH 65V 1930MHz to 1990MHz 4-Pin TO-272WB T/R
***ical
Trans RF MOSFET N-CH 65V 5-Pin TO-272 WB EP T/R
***el Electronic
DC Fan Axial Ball Bearing 12V 9.5V to 13.8V 5.5CFM 22dB (35 X 35 X 10mm)
***i-Key
MOSFET RF N-CH 28V 29W TO272-4
***escale Semiconductor
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V
***ical
Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R
*** Electronic Components
RF MOSFET Transistors HV8 2.1GHZ 130W NI780S-4
***el Electronic
Gate Drivers INTEGRATED DRIVER MOSFET
***or
FET RF 2CH 65V 2.17GHZ NI780S-4
***escale Semiconductor
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2010-2025 MHz, 10 W Avg., 32 V
***et
Power LDMOS Transistor N-Channel 65V 5-Pin NI-780S T/R
***ical
Trans RF MOSFET N-CH 65V 5-Pin NI-780S T/R
*** Electronic Components
RF MOSFET Transistors HV7 2GHZ 40W NI780HS-4
***i-Key
FET RF 2CH 65V 2.03GHZ NI780HS-4
***i-Key Marketplace
RF 2-ELEMENT, S BAND, N-CHANNEL
***et
Transistor RF FET N-CH 65V 3400MHz to 3800MHz 3-Pin NI-400S-240 T/R
*** Electronic Components
RF MOSFET Transistors 3600MHZ 8W 30V
***ponent Stockers USA
S BAND Si N-CHANNEL RF POWER MOSFET
***el Electronic
IC DRVR SYNC BUCK MOSF 12A 8SOIC
***ure Electronics
N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA
***emi
N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ
***ment14 APAC
MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance
***roFlash
Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
***nsix Microsemi
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***emi
N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ
***ure Electronics
N-Channel 50 V 0.1 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA
***r Electronics
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ment14 APAC
MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:48W; Power Dissipation Pd:40W; Pulse Current Idm:20A; SMD Marking:RFD14N05; Termination Type:SMD; Voltage Vds Typ:50V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***rchild Semiconductor
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
Teil # Mfg. Beschreibung Aktie Preis
MRF7S19100NBR1
DISTI # 26078383		NXP SemiconductorsTrans RF MOSFET N-CH 65V 5-Pin TO-272 W T/R160
  • 1:$65.4109
MRF7S19100NBR1
DISTI # MRF7S19100NBR1-ND		NXP SemiconductorsFET RF 65V 1.99GHZ TO272-4
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		Limited Supply - Call
    MRF7S19100NBR1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272
    RoHS: Compliant    		54
    • 1000:$43.3000
    • 500:$45.5800
    • 100:$47.4600
    • 25:$49.4900
    • 1:$53.3000
    MRF7S19100NBR1
    DISTI # 841-MRF7S19100NBR1    		NXP SemiconductorsRF MOSFET Transistors 1990MHZ 29W
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      MRF7S19080HR5

      Mfr.#: MRF7S19080HR5

      OMO.#: OMO-MRF7S19080HR5

      		 RF MOSFET Transistors HV7 1.9GHZ 28V
      MRF7S19080HR3

      Mfr.#: MRF7S19080HR3

      OMO.#: OMO-MRF7S19080HR3

      		 RF MOSFET Transistors HV7 1.9GHZ 28V
      MRF7S19080H

      Mfr.#: MRF7S19080H

      OMO.#: OMO-MRF7S19080H-1190

      		 Neu und Original
      MRF7S19080HSR5

      Mfr.#: MRF7S19080HSR5

      OMO.#: OMO-MRF7S19080HSR5-NXP-SEMICONDUCTORS

      		 FET RF 65V 1.99GHZ NI-780S
      MRF7S19170HR3

      Mfr.#: MRF7S19170HR3

      OMO.#: OMO-MRF7S19170HR3-NXP-SEMICONDUCTORS

      		 FET RF 65V 1.99GHZ NI-880
      MRF7S19210HR

      Mfr.#: MRF7S19210HR

      OMO.#: OMO-MRF7S19210HR-1190

      		 Neu und Original
      MRF7S19210HR3

      Mfr.#: MRF7S19210HR3

      OMO.#: OMO-MRF7S19210HR3-NXP-SEMICONDUCTORS

      		 FET RF 65V 1.99GHZ NI780
      MRF7S19210HR5

      Mfr.#: MRF7S19210HR5

      OMO.#: OMO-MRF7S19210HR5-NXP-SEMICONDUCTORS

      		 FET RF 65V 1.99GHZ NI780
      MRF7S19210HSR3

      Mfr.#: MRF7S19210HSR3

      OMO.#: OMO-MRF7S19210HSR3-NXP-SEMICONDUCTORS

      		 FET RF 65V 1.99GHZ NI780S
      MRF7S19100NBR1

      Mfr.#: MRF7S19100NBR1

      OMO.#: OMO-MRF7S19100NBR1-NXP-SEMICONDUCTORS

      		 RF MOSFET Transistors 1990MHZ 29W
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von MRF7S19100NBR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      64,95 $
      64,95 $
      10
      61,70 $
      617,02 $
      100
      58,46 $
      5 845,50 $
      500
      55,21 $
      27 603,75 $
      1000
      51,96 $
      51 960,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Top