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RRQ020P03TCR

RRQ020P03TCR
Mfr. #:
RRQ020P03TCR
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET Trans MOSFET P-CH 30V 2A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RRQ020P03TCR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
RRQ020P03TCR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-457T-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
2 A
Rds On - Drain-Source-Widerstand:
115 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
3.2 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.25 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 P-Channel
Marke:
ROHM Halbleiter
Vorwärtstranskonduktanz - Min:
1.5 S
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
RRQ020P03
Tags
RRQ020P03T, RRQ02, RRQ0, RRQ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 30V 2A 6-Pin TSMT T/R
***i-Key
MOSFET P-CH 30V 2A TSMT6
***ure Electronics
N-Channel 30 V 120 mOhm SMT Enhancement Mode Mosfet - SOT-89
***ical
Trans MOSFET N-CH 30V 3.3A Automotive 4-Pin(3+Tab) SOT-89 T/R
***ark
Mosfet, N-Ch, 30V, 3.3A, Sot-89 Rohs Compliant: Yes
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***et Europe
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
***emi
P-Channel Power MOSFET, -30V, -2.5A, 156mΩ
***el Electronic
Motor / Motion / Ignition Controllers & Drivers STEPPING MOTOR DRIVER
***r Electronics
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
***ark
PCH 4V DRIVE SERIES / REEL ROHS COMPLIANT: YES
***ineon
Benefits: RoHS Compliant; Fast Switching; Low Profile (less than 1.1mm); Dual N-Channel MOSFET
***ure Electronics
Dual N-Channel 30 V 0.222 Ohm 12 nC HEXFET® Power Mosfet - MICRO-8
***ineon SCT
30V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS
***ment14 APAC
DUAL N CHANNEL MOSFET, 30V, MICRO8; Tran; DUAL N CHANNEL MOSFET, 30V, MICRO8; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:2.4A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.135ohm; Rds(on) Test Voltage Vgs:10V
***ark
DUAL N CHANNEL MOSFET, 30V, MICRO8, FULL REEL; Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:2.4A; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 2.4 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 135 / Gate-Source Voltage V = 20 / Fall Time ns = 5.3 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 4.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = Micro8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.25
***et Europe
Trans MOSFET N/P-CH 30V 3.7A/2.7A 8-Pin MLP832 T/R
***i-Key
MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
***th Star Micro
MOSFET N+P 30V 2.7A 8MLP 3 X 2
***emi
Small Signal MOSFET 30V 3.2A 60 mOhm Single N-Channel SC−88/SC70−6/SOT−363
***ser
MOSFETs- Power and Small Signal NFET 30V 3.2A 60MOHM
***Yang
Trans MOSFET N-CH 30V 2.6A 6-Pin SC-88 T/R - Tape and Reel
***ponent Stockers USA
1800 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET
***r Electronics
Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 30V 1.8A SC88/SC70-6
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.6A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-SC-88 ;RoHS Compliant: Yes
***emi
P-Channel PowerTrench® MOSFET, Logic Level, -30V, -1.5A, 125mΩ
***enic
30V 1.5A 500mW 125m´Î@10V1.5A 3V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***nell
MOSFET, P, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.9V; Power Dissipati
***trelec
MOSFET Operating temperature: -55...150 °C Marking: 358 Drive: logic level Housing type: SOT-23 Polarity: P Power dissipation: 500 mW
***rchild Semiconductor
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Teil # Mfg. Beschreibung Aktie Preis
RRQ020P03TCR
DISTI # RRQ020P03TCR-ND		ROHM SemiconductorMOSFET P-CH 30V 2A TSMT6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.1287
RRQ020P03TCR
DISTI # RRQ020P03TCR		ROHM SemiconductorTRANS MOSFET P-CH 30V 2A 6-PIN TSMT T/R - Tape and Reel (Alt: RRQ020P03TCR)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.0999
  • 18000:$0.1019
  • 12000:$0.1079
  • 6000:$0.1149
  • 3000:$0.1229
RRQ020P03TCR
DISTI # 755-RRQ020P03TCR		ROHM SemiconductorMOSFET Trans MOSFET P-CH 30V 2A
RoHS: Compliant		2757
  • 1:$0.4600
  • 10:$0.3460
  • 100:$0.1880
  • 1000:$0.1410
  • 3000:$0.1210
  • 9000:$0.1140
  • 24000:$0.1040
  • 45000:$0.1000
RRQ020P03TCRROHM Semiconductor 2400
  • 534:$0.3000
  • 134:$0.3750
  • 1:$0.7500
RRQ020P03TCRROHM Semiconductor 100
  • 1:¥3.0024
  • 100:¥1.7024
  • 1500:¥1.0793
  • 3000:¥0.8041
RRQ020P03TCRROHM SemiconductorRoHS(ship within 1day)3000
  • 1:$0.7400
  • 10:$0.5600
  • 50:$0.3500
  • 100:$0.2600
  • 500:$0.1700
  • 1000:$0.1500
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LP2950CDTX-3.3/NOPB

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1SMB5935BT3G

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 Zener Diodes 27V 3W
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von RRQ020P03TCR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,46 $
0,46 $
10
0,35 $
3,46 $
100
0,19 $
18,80 $
1000
0,14 $
141,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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