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FDU6680

FDU6680
Mfr. #:
FDU6680
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 30V N-Channel PowerTrench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDU6680 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
46 A
Rds On - Drain-Source-Widerstand:
10 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
3.3 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
47 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
75
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
29 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
FDU6680_NL
Gewichtseinheit:
0.139332 oz
Tags
FDU6680, FDU668, FDU66, FDU6, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
MOSFET 30V N-Channel PowerTrench - Bulk
***i-Key Marketplace
MOSFET N-CH 30V 12A/46A IPAK
***ter Electronics
30V, NCH , IPAK, TO-251, SINGLE
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 30V 14A I-PAK
***et
30V N-Channel PowerTrench MOSFET
***r Electronics
Power Field-Effect Transistor, 21A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***Yang
MOSFET 30V N-Ch PowerTrench Fast Switching - Bulk
***i-Key
MOSFET N-CH 30V 15A I-PAK
***r Electronics
Power Field-Effect Transistor, 21A I(D), 30V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***i-Key Marketplace
MOSFET N-CH 30V 15A/50A IPAK
***el Nordic
Contact for details
***ser
MOSFETs- Power and Small Signal NFET 30V 58A 9MOHM
***et
Trans MOSFET N-CH 25V 11.5A 3-Pin(3+Tab) IPAK Rail
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:58A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:52W ;RoHS Compliant: Yes
***emi
Power MOSFET 30V 54A 10 mOhm Single N-Channel DPAK
***ser
MOSFETs- Power and Small Signal NFET 30V 54A 10MOHM
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:54A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:50W ;RoHS Compliant: Yes
***ser
MOSFETs 30V,58A,10 OHM, NCH PWR TRENCH MOSFET
***Yang
MOSFET N-CH 30V 58A I-PAK - Bulk
***i-Key Marketplace
MOSFET N-CH 30V 13A/58A IPAK
***S
new, original packaged
***el Nordic
Contact for details
***ser
MOSFETs- Power and Small Signal NFET 30V 63A 8MOHM
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:63A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, 3 I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:63A; Resistance, Rds On:0.008ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:54.6W; Voltage, Vds Max:30V
Teil # Mfg. Beschreibung Aktie Preis
FDU6680
DISTI # FDU6680-ND		ON SemiconductorMOSFET N-CH 30V 12A IPAK
RoHS: Compliant
Min Qty: 1800
Container: Tube		Limited Supply - Call
    FDU6680Fairchild Semiconductor CorporationPower Field-Effect Transistor, 12A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Compliant    		82353
    • 1000:$0.5900
    • 500:$0.6200
    • 100:$0.6500
    • 25:$0.6800
    • 1:$0.7300
    FDU6680AFairchild Semiconductor CorporationPower Field-Effect Transistor, 14A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Compliant    		9000
    • 1000:$0.7900
    • 500:$0.8300
    • 100:$0.8700
    • 25:$0.9000
    • 1:$0.9700
    FDU6680
    DISTI # 512-FDU6680    		ON SemiconductorMOSFET 30V N-Channel PowerTrench
    RoHS: Compliant    		0
      FDU6680A
      DISTI # 512-FDU6680A      		ON SemiconductorMOSFET 30V N-Ch PowerTrench
      RoHS: Compliant      		0
        FDU6680Fairchild Semiconductor Corporation12 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA2617
        • 2134:$0.3300
        • 477:$0.3750
        • 1:$1.2000
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5000
        Menge eingeben:
        Der aktuelle Preis von FDU6680 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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