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IPW65R110CFDFKSA1

IPW65R110CFDFKSA1
Mfr. #:
IPW65R110CFDFKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPW65R110CFDFKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPW65R110CFDFKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
31.2 A
Rds On - Drain-Source-Widerstand:
99 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
118 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
277.8 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
21.1 mm
Länge:
16.13 mm
Serie:
CoolMOS CFD2
Transistortyp:
1 N-Channel
Breite:
5.21 mm
Marke:
Infineon-Technologien
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
240
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
68 ns
Typische Einschaltverzögerungszeit:
16 ns
Teil # Aliase:
IPW65R110CFD IPW65R11CFDXK SP000895232
Gewichtseinheit:
1.340411 oz
Tags
IPW65R11, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 110 mOhm 118 nC CoolMOS™ Power Mosfet - TO-247-3
***Components
N-Channel MOSFET, 31 A, 700 V, 3-Pin TO-247 Infineon IPW65R110CFDFKSA1
***p One Stop Global
Trans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247 Tube
***p One Stop Japan
Trans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247
***et
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube
***ark
MOSFET, N CH, 700V, 31.2A, TO-247-3
***ronik
CoolMOS 650V 31A 110mOhm TO247
***i-Key
HIGH POWER_LEGACY
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 700V, 31.2A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 700V, 31.2A, TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:700V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPW65R110CFDFKSA1
DISTI # IPW65R110CFDFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 31.2A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1200:$4.0406
  • 720:$4.7086
  • 240:$5.7105
  • 10:$6.8670
  • 1:$7.6300
IPW65R110CFDFKSA1
DISTI # IPW65R110CFDFKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW65R110CFDFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$3.2900
  • 480:$3.1900
  • 960:$3.0900
  • 1440:$2.9900
  • 2400:$2.8900
IPW65R110CFDFKSA1
DISTI # IPW65R110CFD		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247 (Alt: IPW65R110CFD)
RoHS: Compliant
Min Qty: 240		Asia - 0
    IPW65R110CFDFKSA1
    DISTI # SP000895232    		Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin(3+Tab) TO-247 (Alt: SP000895232)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€6.5000
    • 10:€4.3500
    • 100:€3.6800
    • 250:€3.5000
    • 500:€3.1000
    • 1000:€2.4300
    IPW65R110CFDFKSA1
    DISTI # 85X6043    		Infineon Technologies AGMOSFET Transistor, N Channel, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V , RoHS Compliant: Yes0
    • 1:$6.1900
    • 10:$5.2600
    • 25:$5.0300
    • 50:$4.7900
    • 100:$4.5600
    IPW65R110CFDFKSA1Infineon Technologies AGPower Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		62
    • 1000:$3.4600
    • 500:$3.6400
    • 100:$3.7900
    • 25:$3.9500
    • 1:$4.2500
    IPW65R110CFDFKSA1
    DISTI # 726-IPW65R110CFDFKSA    		Infineon Technologies AGMOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
    RoHS: Compliant    		36
    • 1:$6.1900
    • 10:$5.2600
    • 100:$4.5600
    IPW65R110CFD
    DISTI # 726-IPW65R110CFD    		Infineon Technologies AGMOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
    RoHS: Compliant    		0
    • 1:$6.1900
    • 10:$5.2600
    • 100:$4.5600
    IPW65R110CFDFKSA1
    DISTI # 8268241P    		Infineon Technologies AGMOSFET N-CH 650V 31A COOLMOS CFD2 TO247, TU42
    • 10:£4.7800
    • 20:£4.3900
    IPW65R110CFDFKSA1
    DISTI # IPW65R110CFDFKSA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,650V,31.2A,277.8W,PG-TO247-385
    • 1:$7.8800
    • 3:$6.7800
    • 10:$5.4500
    • 30:$4.7300
    IPW65R110CFDFKSA1
    DISTI # 2443409    		Infineon Technologies AGMOSFET, N CH, 700V, 31.2A, TO-247-3
    RoHS: Compliant    		0
    • 1:$9.8000
    • 10:$8.3300
    • 100:$7.2200
    IPW65R110CFDFKSA1
    DISTI # 2443409    		Infineon Technologies AGMOSFET, N CH, 700V, 31.2A, TO-247-3
    RoHS: Compliant    		3
    • 1:£5.2100
    • 10:£3.9000
    • 100:£3.4800
    • 250:£3.3700
    • 500:£3.2600
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    Verfügbarkeit
    Aktie:
    244
    Auf Bestellung:
    2227
    Menge eingeben:
    Der aktuelle Preis von IPW65R110CFDFKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,18 $
    6,18 $
    10
    5,25 $
    52,50 $
    100
    4,55 $
    455,00 $
    250
    4,32 $
    1 080,00 $
    500
    3,87 $
    1 935,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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