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SI1012X-T1-E3

SI1012X-T1-E3
Mfr. #:
SI1012X-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 781-SI1012X-T1-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI1012X-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI1012X-T1-E3 DatasheetSI1012X-T1-E3 Datasheet (P4-P6)SI1012X-T1-E3 Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SC-89-3
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
1.6 mm
Serie:
SI1
Breite:
0.85 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI1012X-E3
Gewichtseinheit:
0.001058 oz
Tags
SI1012X-T1, SI1012X-T, SI1012X, SI1012, SI101, SI10, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 20V 500MA SC89-3
***ser
N-Channel MOSFETs 20V 0.6A
***
18V WITH ESD PROTECTION
***ment14 APAC
MOSFET, N CH, 20V, 0.5A, SC89; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.25ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:250mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-89; No. of Pins:3; Current Id Max:500mA; Package / Case:SC-89; Power Dissipation Pd:250mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
Teil # Mfg. Beschreibung Aktie Preis
SI1012X-T1-E3
DISTI # SI1012X-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI1012X-T1-E3
    DISTI # SI1012X-T1-E3CT-ND    		Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI1012X-T1-E3
      DISTI # SI1012X-T1-E3DKR-ND      		Vishay SiliconixMOSFET N-CH 20V 500MA SC89-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI1012X-T1-E3
        DISTI # 781-SI1012X-E3        		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI1012X-T1-GE3
        RoHS: Compliant        		0
          SI1012X-T1
          DISTI # 781-SI1012X          		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI1012X-T1-GE3
          RoHS: Not compliant          		0
            SI1012X-T1-E3
            DISTI # 1612636            		Vishay IntertechnologiesMOSFET, N CH, 20V, 0.5A, SC89
            RoHS: Compliant            		0
            • 5000:$0.3250
            • 2500:$0.3450
            • 1000:$0.4010
            • 500:$0.4790
            • 100:$0.6160
            • 20:$0.7840
            Bild Teil # Beschreibung
            SI1012-TP

            Mfr.#: SI1012-TP

            OMO.#: OMO-SI1012-TP

            		 MOSFET N-Channel MOSFET, SOT-523 package
            SI1012CR-T1-GE3

            Mfr.#: SI1012CR-T1-GE3

            OMO.#: OMO-SI1012CR-T1-GE3

            		 MOSFET 20V Vds 8V Vgs SC75A
            SI1012-A-GM

            Mfr.#: SI1012-A-GM

            OMO.#: OMO-SI1012-A-GM-SILICON-LABS

            		 IC RF TXRX+MCU ISM<1GHZ 42WFQFN
            SI1012R-T1-E3 , MAX6840X

            Mfr.#: SI1012R-T1-E3 , MAX6840X

            OMO.#: OMO-SI1012R-T1-E3-MAX6840X-1190

            		 Neu und Original
            SI1012R-T1-E3 , MAX6840XSD0

            Mfr.#: SI1012R-T1-E3 , MAX6840XSD0

            OMO.#: OMO-SI1012R-T1-E3-MAX6840XSD0-1190

            		 Neu und Original
            SI1012RSOT-523

            Mfr.#: SI1012RSOT-523

            OMO.#: OMO-SI1012RSOT-523-1190

            		 Neu und Original
            SI1012RT1E3

            Mfr.#: SI1012RT1E3

            OMO.#: OMO-SI1012RT1E3-1190

            		 Neu und Original
            SI1012X-T1

            Mfr.#: SI1012X-T1

            OMO.#: OMO-SI1012X-T1-1190

            		 MOSFET RECOMMENDED ALT 781-SI1012X-T1-GE3
            SI1012R-T1-GE3-CUT TAPE

            Mfr.#: SI1012R-T1-GE3-CUT TAPE

            OMO.#: OMO-SI1012R-T1-GE3-CUT-TAPE-1190

            		 Neu und Original
            SI1012-A-GMR

            Mfr.#: SI1012-A-GMR

            OMO.#: OMO-SI1012-A-GMR-SILICON-LABS

            		 IC RF TXRX+MCU ISM<1GHZ 42WFQFN
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            4500
            Menge eingeben:
            Der aktuelle Preis von SI1012X-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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