We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SIHB22N60S-E3 DISTI # SIHB22N60S-E3-ND | Vishay Siliconix | MOSFET N-CH 600V 22A D2PAK Container: Tube | Limited Supply - Call | |
| SIHB22N60S-GE3 DISTI # SIHB22N60S-GE3-ND | Vishay Siliconix | MOSFET N-CH 650V TO263 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SIHB22N60S-E3 DISTI # 74R0202 | Vishay Intertechnologies | MOSFET, N CHANNEL, 600V, 22A, D2PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:600V,On Resistance Rds(on):160mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,No. of Pins:3 RoHS Compliant: Yes RoHS: Compliant | 0 | |
| SIHB22N60SE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | Europe - 200 | |
| SIHB22N60SGE3 | Vishay Siliconix | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | Europe - 600 | |
| SIHB22N60S | ISC | D²PAK/TO-263 | 5000 | |
| SIHB22N60S-E3 DISTI # 1794783 | Vishay Intertechnologies | MOSFET, N CH, 600V, 22A, TO263 RoHS: Compliant | 0 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: SIHOJ642B2S320B OMO.#: OMO-SIHOJ642B2S320B-1190 |
Neu und Original |
|
|
Mfr.#: SIHOJ646B2B3100 OMO.#: OMO-SIHOJ646B2B3100-1190 |
Neu und Original |