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FDS5692Z

FDS5692Z
Mfr. #:
FDS5692Z
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 50V N-Ch UltraFET PowerTrench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDS5692Z Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDS5692Z DatasheetFDS5692Z Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
50 V
Id - Kontinuierlicher Drainstrom:
5.8 A
Rds On - Drain-Source-Widerstand:
20 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
3.9 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
27 ns
Typische Einschaltverzögerungszeit:
9 ns
Gewichtseinheit:
0.006596 oz
Tags
FDS569, FDS56, FDS5, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 50V 5.8A 8-Pin SOIC N T/R
***ser
MOSFETs 50V N-Ch UltraFET PowerTrench MOSFET
***ter Electronics
50V,5.8A,24OHM NCH ULTRAFET TRENCH MOSFET
***inecomponents.com
This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***et
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***ark
Mosfet, Dual, N-Ch, 40V, 7A Rohs Compliant: Yes
***des Inc SCT
40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
*** Stop Electro
Small Signal Field-Effect Transistor
***emi
N-Channel PowerTrench® MOSFET, 60V, 7A, 28mΩ
***ure Electronics
N-Channel 60 V 28 mOhm PowerTrench Mosfet SOIC-8
***et Europe
Trans MOSFET N-CH 60V 7A 8-Pin SOIC N T/R
***nell
MOSFET, N-CH, 60V, 7A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.022ohm; Rds(on; Available until stocks are exhausted Alternative available
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***i-Key
MOSFET N/P-CH 40V 7.5A/6A 8SOIC
***ark
MOSFET, DUAL, NP, SO-8; Transistor type:Enhancement; Voltage, Vds typ:40V; Current, Id cont:7.5A; Resistance, Rds on:31mohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4V; Case style:SOIC; Current, Id cont N RoHS Compliant: Yes
***nell
MOSFET, DUAL, NP, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.031ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 4V; Power Dis
***ponent Sense
Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7850DP-T1-E3/BKN)
*** Electronics
SI7850DP-T1-E3 ; ROHS ; V ISHAY/SILICONIX ; MOSFET N-CH 60V POWERPAK 8-SOIC
***ure Electronics
Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 0.018Ohm,ID 6.2A,PowerPAK SO-8,PD 1.8W,-55C
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.8W; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.3A; Package / Case:SOIC PowerPAK; Power Dissipation Pd:1.8W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N SO-8 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.2A; Resistance, Rds On:0.031ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC PowerPAK; Termination Type:SMD; Current, Idm Pulse:40A; External Depth:5.26mm; External Length / Height:1.2mm; N-channel Gate Charge:27nC; No. of Pins:8; Power Dissipation:1.8W; Power, Pd:1.8W; Power, Ptot:1.8W; Quantity, Reel:3000; Resistance, Rds on Max:0.022ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:3.3°C/W; Voltage, Vds Max:60V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:1V; Width, External:6.2mm; Width, Tape:12mm
***ure Electronics
Single N-Channel 60 V 26 mOhm 21 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa
***emi
Dual N-Channel PowerTrench® MOSFET, Logic Level, 40V, 6A, 29mΩ
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.029ohm; Rds(on) Test Voltage, Vgs:1.9V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 6 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 36 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 900
Teil # Mfg. Beschreibung Aktie Preis
FDS5692Z
DISTI # FDS5692ZTR-ND		ON SemiconductorMOSFET N-CH 50V 5.8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDS5692Z
    DISTI # FDS5692ZCT-ND    		ON SemiconductorMOSFET N-CH 50V 5.8A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDS5692Z
      DISTI # FDS5692ZDKR-ND      		ON SemiconductorMOSFET N-CH 50V 5.8A 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDS5692Z
        DISTI # FDS5692Z        		ON SemiconductorTrans MOSFET N-CH 50V 5.8A 8-Pin SOIC N T/R - Bulk (Alt: FDS5692Z)
        RoHS: Compliant
        Min Qty: 338
        Container: Bulk        		Americas - 0
        • 3380:$0.9129
        • 1690:$0.9359
        • 1014:$0.9479
        • 676:$0.9609
        • 338:$0.9669
        FDS5692Z
        DISTI # 512-FDS5692Z        		ON SemiconductorMOSFET 50V N-Ch UltraFET PowerTrench MOSFET
        RoHS: Compliant        		0
          FDS5692ZFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 5.8A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		8231
          • 1000:$0.9700
          • 500:$1.0300
          • 100:$1.0700
          • 25:$1.1100
          • 1:$1.2000
          Bild Teil # Beschreibung
          FDS5009EC1

          Mfr.#: FDS5009EC1

          OMO.#: OMO-FDS5009EC1-1190

          		 Neu und Original
          FDS5009M

          Mfr.#: FDS5009M

          OMO.#: OMO-FDS5009M-1190

          		 Neu und Original
          FDS5351

          Mfr.#: FDS5351

          OMO.#: OMO-FDS5351-ON-SEMICONDUCTOR

          		 MOSFET N-CH 60V 6.1A 8-SOIC
          FDS5612-NL

          Mfr.#: FDS5612-NL

          OMO.#: OMO-FDS5612-NL-1190

          		 Neu und Original
          FDS5672A

          Mfr.#: FDS5672A

          OMO.#: OMO-FDS5672A-1190

          		 Neu und Original
          FDS5682-NL

          Mfr.#: FDS5682-NL

          OMO.#: OMO-FDS5682-NL-1190

          		 Neu und Original
          FDS5690

          Mfr.#: FDS5690

          OMO.#: OMO-FDS5690-ON-SEMICONDUCTOR

          		 MOSFET N-CH 60V 7A 8SOIC
          FDS5690_F095

          Mfr.#: FDS5690_F095

          OMO.#: OMO-FDS5690-F095-1190

          		 Neu und Original
          FDS58949-NL

          Mfr.#: FDS58949-NL

          OMO.#: OMO-FDS58949-NL-1190

          		 Neu und Original
          FDS5672_F095

          Mfr.#: FDS5672_F095

          OMO.#: OMO-FDS5672-F095-ON-SEMICONDUCTOR

          		 MOSFET N-CH
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1000
          Menge eingeben:
          Der aktuelle Preis von FDS5692Z dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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