S29GL01GS11DHV013

S29GL01GS11DHV013
Mfr. #:
S29GL01GS11DHV013
Hersteller:
Cypress Semiconductor
Beschreibung:
NOR Flash Nor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S29GL01GS11DHV013 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
S29GL01GS11DHV013 Mehr Informationen S29GL01GS11DHV013 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
NOR-Blitz
RoHS:
Y
Serie:
S29GL01G/512/256/128S
Verpackung:
Spule
Speichertyp:
NOCH
Marke:
Cypress Semiconductor
Feuchtigkeitsempfindlich:
ja
Produktart:
NOR-Blitz
Werkspackungsmenge:
2200
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
MirrorBit Eclipse
Tags
S29GL01GS11DHV, S29GL01GS11D, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
1G BIT, 3V, 110NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEAT
***i-Key
IC FLASH 1G PARALLEL 64BGA
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Teil # Mfg. Beschreibung Aktie Preis
S29GL01GS11DHV013
DISTI # S29GL01GS11DHV013-ND
Cypress SemiconductorIC FLASH 1G PARALLEL 64BGA
RoHS: Compliant
Min Qty: 2200
Container: Tape & Reel (TR)
2200In Stock
  • 2200:$8.5253
IS29GL01GS-11DHV013
DISTI # IS29GL01GS-11DHV013-ND
Cypress SemiconductorIC FLASH 1G PARALLEL
RoHS: Compliant
Min Qty: 2200
Container: Tape & Reel (TR)
Limited Supply - Call
    S29GL01GS11DHV013
    DISTI # 727-29GL01GS11DHV013
    Cypress SemiconductorNOR Flash Nor
    RoHS: Compliant
    0
    • 2200:$8.5300
    IS29GL01GS-11DHV013
    DISTI # 727-IS29GL01GS11DV13
    Cypress SemiconductorNOR Flash Nor
    RoHS: Compliant
    0
      Bild Teil # Beschreibung
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      OMO.#: OMO-S29GL01GT11FHV020-CYPRESS-SEMICONDUCTOR

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      Mfr.#: S29GL01GS10FHSS20

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      OMO.#: OMO-S29GL01GS10FHI023-CYPRESS-SEMICONDUCTOR

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      Mfr.#: S29GL01GS11DHB020

      OMO.#: OMO-S29GL01GS11DHB020-CYPRESS-SEMICONDUCTOR

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      S29GL01GS11TFA010

      Mfr.#: S29GL01GS11TFA010

      OMO.#: OMO-S29GL01GS11TFA010-CYPRESS-SEMICONDUCTOR

      Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
      S29GL01GP11FFIR23

      Mfr.#: S29GL01GP11FFIR23

      OMO.#: OMO-S29GL01GP11FFIR23-CYPRESS-SEMICONDUCTOR

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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von S29GL01GS11DHV013 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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