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IRF7807VTRPBF

IRF7807VTRPBF
Mfr. #:
IRF7807VTRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 30V 8.3A 25mOhm 9.5nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF7807VTRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7807VTRPBF DatasheetIRF7807VTRPBF Datasheet (P4-P6)IRF7807VTRPBF Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
IRF7807VTRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
8.3 A
Rds On - Drain-Source-Widerstand:
25 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
9.5 nC
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Breite:
3.9 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001566394
Gewichtseinheit:
0.019048 oz
Tags
IRF7807V, IRF7807, IRF780, IRF78, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    I***v
    I***v
    RU

    The order came, everything is fine.

    2019-01-16
    A***v
    A***v
    RU

    Before moscow, the order was delivered in 2 months. Long.

    2019-07-02
    E**b
    E**b
    RO

    Everything is good. It works flawlessly, but i didn't have time to test it properly.Arată aiurea, dar funcționează impecabil. Încă nu am avut timp să o testez in sarcină!

    2019-03-24
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 17 Milliohms;ID 8.3A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single N-Channel 30 V 25 mOhm 9.5 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC Tube
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.017ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 3V; Power Dissip
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -30V, -10A, 20 MOHM, 61 NC QG, SO-8, HALOGEN-FREE
***et
Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R
***ark
P CHANNEL POWER MOSFET, HEXFET, -30V, -10A, SO-8
***S
French Electronic Distributor since 1988
***Yang
Transistor MOSFET Array Dual N-CH 30V 7.8A/8.9A 8-Pin SOIC T/R - Tape and Reel
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.9A; On Resistance, Rds(on):17.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***et Japan
Transistor MOSFET Array Dual N-CH 30V 10A 8-Pin SOIC T/R
***icroelectronics
Dual N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET (TM); V Power MOSFET
***ark
Mosfet, Dual N-Ch, 30V, 10A, Soic; Channel Type:n Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:10A; Continuous Drain Current Id P Channel:10A Rohs Compliant: Yes
***et
Transistor MOSFET Array Dual N-CH 30V 7.2A 8-Pin SOIC T/R
***p One Stop
Trans MOSFET N-CH 30V 7.2A 8-Pin SO T/R
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***ark
Mosfet, Dual, N-Ch, 30V, 6.8A Rohs Compliant: Yes
***ment14 APAC
MOSFET, DUAL, N-CH, 30V, 6.8A;
***p One Stop Global
Trans MOSFET N-CH 30V 8.5A 8-Pin SO T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***el Nordic
Contact for details
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF7807VTRPBF
DISTI # 31326475		Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.3552
IRF7807VTRPBF
DISTI # IRF7807VPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3676In Stock
  • 1000:$0.4169
  • 500:$0.5212
  • 100:$0.7036
  • 10:$0.9120
  • 1:$1.0400
IRF7807VTRPBF
DISTI # IRF7807VPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3676In Stock
  • 1000:$0.4169
  • 500:$0.5212
  • 100:$0.7036
  • 10:$0.9120
  • 1:$1.0400
IRF7807VTRPBF
DISTI # IRF7807VPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.3669
IRF7807VTRPBF
DISTI # C1S322000604799		Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.3770
IRF7807VTRPBF
DISTI # IRF7807VTRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7807VTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.2649
  • 8000:$0.2549
  • 16000:$0.2459
  • 24000:$0.2379
  • 40000:$0.2329
IRF7807VTRPBF
DISTI # 49AC0329		Infineon Technologies AGMOSFET, N-CH, 30V, 8.3A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:8.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes2915
  • 1:$0.8500
  • 10:$0.7000
  • 25:$0.6200
  • 50:$0.5400
  • 100:$0.4600
  • 250:$0.4300
  • 500:$0.4000
  • 1000:$0.3700
IRF7807VTRPBF
DISTI # 70017724		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 17 Milliohms,ID 8.3A,SO-8,PD 2.5W,VGS +/-20V
RoHS: Compliant		0
  • 4000:$1.2600
  • 8000:$1.2350
  • 20000:$1.1970
  • 40000:$1.1470
  • 100000:$1.0710
IRF7807VTRPBF
DISTI # 942-IRF7807VTRPBF		Infineon Technologies AGMOSFET MOSFT 30V 8.3A 25mOhm 9.5nC
RoHS: Compliant		2586
  • 1:$0.8500
  • 10:$0.7000
  • 100:$0.4600
  • 1000:$0.3700
IRF7807VTRPBFInternational Rectifier 
RoHS: Compliant		Europe - 4490
    IRF7807VTRPBF
    DISTI # 2839485    		Infineon Technologies AGMOSFET, N-CH, 30V, 8.3A, SOIC
    RoHS: Compliant    		2935
    • 5:£0.5960
    • 25:£0.5400
    • 100:£0.3480
    • 250:£0.3100
    • 500:£0.2730
    IRF7807VTRPBF
    DISTI # 2839485    		Infineon Technologies AGMOSFET, N-CH, 30V, 8.3A, SOIC
    RoHS: Compliant    		2915
    • 5:$1.1400
    • 25:$0.9960
    • 100:$0.8120
    • 250:$0.6860
    • 500:$0.5940
    • 1000:$0.5610
    • 5000:$0.5320
    Bild Teil # Beschreibung
    ADM485JRZ

    Mfr.#: ADM485JRZ

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    		 RS-422/RS-485 Interface IC 5V Low Pwr 5Mbps Half Duplex
    IRFP250MPBF

    Mfr.#: IRFP250MPBF

    OMO.#: OMO-IRFP250MPBF

    		 MOSFET MOSFT 200V 30A 75mOhm 82nCAC
    EVQ-P2002M

    Mfr.#: EVQ-P2002M

    OMO.#: OMO-EVQ-P2002M

    		 Tactile Switches 4.7x3.5mm SMD Light Touch Switch
    RC0603JR-074K7L

    Mfr.#: RC0603JR-074K7L

    OMO.#: OMO-RC0603JR-074K7L

    		 Thick Film Resistors - SMD 4.7K OHM 5%
    SML-LXT0805GW-TR

    Mfr.#: SML-LXT0805GW-TR

    OMO.#: OMO-SML-LXT0805GW-TR

    		 Standard LEDs - SMD 0805 Thin PCB Green
    LTN20069

    Mfr.#: LTN20069

    OMO.#: OMO-LTN20069

    		 Heat Sinks Penguin Coolers: Heatsink for BGA, Super BGA, PBGA, and FPBGA, Aluminum, Black Anodized, 16.5x16.5x8.9mm
    RC0603FR-132K4L

    Mfr.#: RC0603FR-132K4L

    OMO.#: OMO-RC0603FR-132K4L-433

    		 Res Thick Film 0603 2.4K Ohm 1% 0.1W(1/10W) ±100ppm/C Molded SMD Paper T/R
    IRFP250MPBF

    Mfr.#: IRFP250MPBF

    OMO.#: OMO-IRFP250MPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 200V 30A TO-247AC
    SML-LXT0805GW-TR

    Mfr.#: SML-LXT0805GW-TR

    OMO.#: OMO-SML-LXT0805GW-TR-LUMEX

    		 Standard LEDs - SMD 0805 Thin PCB Green
    EVQ-P2002M

    Mfr.#: EVQ-P2002M

    OMO.#: OMO-EVQ-P2002M-PANASONIC

    		 Tactile Switches 4.7x3.5mm SMD Light Touch Switch
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von IRF7807VTRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,85 $
    0,85 $
    10
    0,71 $
    7,13 $
    100
    0,46 $
    46,00 $
    1000
    0,37 $
    368,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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