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FCP21N60N

FCP21N60N
Mfr. #:
FCP21N60N
Hersteller:
Rochester Electronics, LLC
Beschreibung:
RF Bipolar Transistors MOSFET 600V, NCH MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCP21N60N Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
FCS
Produktkategorie
IC-Chips
Tags
FCP2, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Mosfet N-ch 600V TO220-3
***i-Key Marketplace
FCP21N60 - N-CHANNEL, MOSFET
***ical
MOSFET 600V, NCH MOSFET
***S
new, original packaged
***el Nordic
Contact for details
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.024Ohm;ID 31A;TO-220 Full-Pak;PD 45W;-55de
***ure Electronics
Single N-Channel 55 V 0.024 Ohm 65 nC HEXFET® Power Mosfet - TO-220-3FP
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 38 W
***et Europe
Trans MOSFET N-CH 55V 31A 3-Pin(3+Tab) TO-220 Full-Pak
*** Stop Electro
Power Field-Effect Transistor, 31A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 55V, 28A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:55V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:38W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.052Ohm;ID 20A;TO-220 Full-Pak;PD 54W
***ure Electronics
Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-220-3FP
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS
***ow.cn
Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 42 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:20A; On-Resistance, Rds(on):52mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 FULLPAK RoHS Compliant: No
***nell
MOSFET, N, 100V, 18A, TO-220FP; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:18A; Resistance, Rds On:0.052ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220FP; Termination Type:Through Hole; Current, Idm Pulse:110A; No. of Pins:3; Power Dissipation:42W; Power, Pd:42W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2.8°C/W; Transistors, No. of:1; Voltage, Isolation:2.5kV; Voltage, Vds Max:100V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.044Ohm;ID 23A;TO-220 Full-Pak;PD 54W
***ure Electronics
Single N-Channel 100 V 0.053 Ohm 74 nC HEXFET® Power Mosfet - TO-220-3FP
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 42 W
***ow.cn
Trans MOSFET N-CH 100V 23A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
***roFlash
Power Field-Effect Transistor, 23A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):44mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 FULLPAK ;RoHS Compliant: Yes
***th Star Micro
Transistor MOSFET N-CH 500V 4.6A 3-Pin (3+Tab) TO-220 Full-Pak
***ure Electronics
Single N-Channel 500 V 0.85 Ohms Flange Mount Power Mosfet - TO-220FP
***(Formerly Allied Electronics)
Pwr MOSFET, 500V Single N-Ch. HEXFET; TO-220 FullPak (ISO)
*** Stop Electro
Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 500V, 4.6A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:40W; Transistor Case Style:TO-220FP; No. of Pins:3; Current Id Max:4.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction to Case Thermal Resistance A:3.1°C/W; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:18A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220
***enic
100V 28A 150W 77m´Î@5V17A 2V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***nell
MOSFET, N, LOGIC, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.077ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissip
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ure Electronics
Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220FP
***et
Trans MOSFET N-CH 200V 9.8A 3-Pin(3+Tab) TO-220 Full-Pak
***ark
N CHANNEL MOSFET, 200V, 9.8A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No
Teil # Mfg. Beschreibung Aktie Preis
FCP21N60N
DISTI # FCP21N60N		ON Semiconductor600V, NCH MOSFET - Rail/Tube (Alt: FCP21N60N)
RoHS: Compliant
Container: Tube		Americas - 0
    FCP21N60N
    DISTI # 512-FCP21N60N    		ON SemiconductorMOSFET 600V, NCH MOSFET
    RoHS: Compliant    		0
      FCP21N60NFairchild Semiconductor Corporation 
      RoHS: Not Compliant      		20186
      • 1000:$2.1100
      • 500:$2.2200
      • 100:$2.3100
      • 25:$2.4100
      • 1:$2.5900
      Bild Teil # Beschreibung
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      Mfr.#: FCP25N60N

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      Mfr.#: FCP2416H154G-D1

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      		 Film Capacitors 0.15uF 50Volts
      FCP2416H224G-D4

      Mfr.#: FCP2416H224G-D4

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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5000
      Menge eingeben:
      Der aktuelle Preis von FCP21N60N dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      3,52 $
      3,52 $
      10
      3,35 $
      33,49 $
      100
      3,17 $
      317,25 $
      500
      3,00 $
      1 498,15 $
      1000
      2,82 $
      2 820,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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