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IPW60R250CP

IPW60R250CP
Mfr. #:
IPW60R250CP
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET N-Ch 600V 12A TO247-3 CoolMOS CP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPW60R250CP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
GEFÜHL
Produktkategorie
FETs - Einzeln
Serie
CoolMOS CP
Verpackung
Rohr
Teil-Aliasnamen
IPW60R250CPFKSA1 IPW60R250CPXK SP000310511
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Handelsname
CoolMOS
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
104 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
12 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Widerstand
250 mOhms
Transistor-Polarität
N-Kanal
Kanal-Modus
Erweiterung
Tags
IPW60R25, IPW60R2, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-247
***i-Key
MOSFET N-CH 650V 12A TO-247
***ronik
CoolMOS 600V 12A 250mOhm TO247
***ark
MOSFET, N, TO-247; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-247;;RoHS Compliant: Yes
***nell
MOSFET, N, TO-247; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-247; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride; Transistor Case Style:TO-247
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
Teil # Mfg. Beschreibung Aktie Preis
IPW60R250CP
DISTI # IPW60R250CP-ND		Infineon Technologies AGMOSFET N-CH 650V 12A TO-247
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
    IPW60R250CPFKSA1
    DISTI # SP000310511    		Infineon Technologies AGTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-247 (Alt: SP000310511)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€1.7900
    • 10:€1.7900
    • 25:€1.7900
    • 50:€1.6900
    • 100:€1.5900
    • 500:€1.5900
    • 1000:€1.5900
    IPW60R250CPInfineon Technologies AGPower Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		10800
    • 1000:$2.1000
    • 500:$2.2100
    • 100:$2.3100
    • 25:$2.4000
    • 1:$2.5900
    IPW60R250CPFKSA1Infineon Technologies AGPower Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		4460
    • 1000:$2.6300
    • 500:$2.7700
    • 100:$2.8900
    • 25:$3.0100
    • 1:$3.2400
    IPW60R250CP
    DISTI # 726-IPW60R250CP    		Infineon Technologies AGMOSFET N-Ch 600V 12A TO247-3 CoolMOS CP
    RoHS: Compliant    		184
    • 1:$4.0000
    • 10:$3.2200
    • 100:$2.9300
    • 250:$2.6400
    • 500:$2.3700
    • 1000:$1.9900
    • 2500:$1.8900
    IPW60R250CPFKSA1
    DISTI # N/A    		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
      Bild Teil # Beschreibung
      IPW60R070CFD7XKSA1

      Mfr.#: IPW60R070CFD7XKSA1

      OMO.#: OMO-IPW60R070CFD7XKSA1

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      IPW60R031CFD7XKSA1

      Mfr.#: IPW60R031CFD7XKSA1

      OMO.#: OMO-IPW60R031CFD7XKSA1

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      Mfr.#: IPW60R199CPFKSA1

      OMO.#: OMO-IPW60R199CPFKSA1-INFINEON-TECHNOLOGIES

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      IPW60R145CFD7XKSA1

      Mfr.#: IPW60R145CFD7XKSA1

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      Mfr.#: IPW60R045CPA(SP000539772

      OMO.#: OMO-IPW60R045CPA-SP000539772-1190

      		 Neu und Original
      IPW60R099C7(SP001298004)

      Mfr.#: IPW60R099C7(SP001298004)

      OMO.#: OMO-IPW60R099C7-SP001298004--1190

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      Mfr.#: IPW60R099CT

      OMO.#: OMO-IPW60R099CT-1190

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      IPW60R190C6.

      Mfr.#: IPW60R190C6.

      OMO.#: OMO-IPW60R190C6--1190

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      Mfr.#: IPW60R190P6

      OMO.#: OMO-IPW60R190P6-1190

      		 - Bulk (Alt: IPW60R190P6)
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von IPW60R250CP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,68 $
      2,68 $
      10
      2,55 $
      25,51 $
      100
      2,42 $
      241,65 $
      500
      2,28 $
      1 141,15 $
      1000
      2,15 $
      2 148,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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