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R6004ENX

R6004ENX
Mfr. #:
R6004ENX
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET 10V Drive Nch MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
R6004ENX Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
R6004ENX Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
4 A
Rds On - Drain-Source-Widerstand:
900 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
15 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
40 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
Super Junction-MOS DE
Transistortyp:
1 N-Channel
Marke:
ROHM Halbleiter
Vorwärtstranskonduktanz - Min:
1.5 S
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
22 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
55 ns
Typische Einschaltverzögerungszeit:
22 ns
Teil # Aliase:
R6004ENX
Gewichtseinheit:
0.000353 oz
Tags
R6004EN, R6004E, R6004, R600, R60
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FM Bulk
***ark
Mosfet, N-Ch, 600V, 4A, To-220Fm; Transistor Polarity:n Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.9Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes
***i-Key
MOSFET N-CH 600V 4A TO220FM
*** Electronics
MOSFET N-CH 600V 4A TO220
***icroelectronics
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N-CH, 600V, 5A, 150DEG C, 60W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package
***ure Electronics
STF7N60M2 Series 600V 0.95 Ohm N-Ch MDmesh II Plus™ Low Qg Power MOSFET-TO-220FP
*** electronic
Transistor MOSFET N-Ch. 5A/600V TO220FP
***ical
Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220FP Tube
***enic
600V 5A 20W 950m´Î@10V2.5A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***(Formerly Allied Electronics)
MOSFET N-Ch 600V 5A MDmesh II TO-220FP
***ark
MOSFET, N-CH, 600V, 5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 600V, 5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.86ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 20W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh II Plus Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***icroelectronics
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package
*** Electronics
STMICROELECTRONICS STF9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
***ure Electronics
N-Channel 650 V 900 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 650V 5A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N CHANNEL, 650V, 5A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.79ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V
***ical
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220FP
***ark
Mosfet, N-Ch, 500V, 7.6A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.72Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon SCT
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHS
***ineon
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
***emi
Power MOSFET, N-Channel, QFET®, 600 V, 4.5 A, 2.5 Ω, TO-220F
***ow.cn
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220FP Tube
***enic
600V 4.5A 33W 2.5´Î@10V2.25A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***nell
MOSFET, N, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.5ohm; Rds(on) Test V; Available until stocks are exhausted Alternative available
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.5A; Resistance, Rds On:2.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220F; Termination ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
***itex
Transistor: N-MOSFET; unipolar; 650V; 4.5A; 0.95ohm; 31W; -55+150 deg.C; THT; TO220FP
***ineon SCT
Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-220FP Tube, PG-TO220-3, RoHS
***ment14 APAC
MOSFET, N, 600V, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):950mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.5A; Package / Case:TO-220F; Power Dissipation Pd:31W; Power Dissipation Pd:31W; Pulse Current Idm:13.5A; Termination Type:Through Hole; Voltage Vds:600V; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Super Junction-MOS EN & KN Series MOSFETs
ROHM Semiconductor Super Junction-MOS EN and KN Series MOSFETs combine the low-noise characteristics of planar MOSFETs and the low ON-resistance characteristics of Super Junction MOSFETs. The EN Series is offered in 600V and 650V versions, and is recommended for power supply circuits requiring noise countermeasures. The fast switching KN Series is offered in 600V, 650V, and 800V variants, and is recommended for power supply circuits demanding lower loss and greater efficiency.     
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Teil # Mfg. Beschreibung Aktie Preis
R6004ENX
DISTI # R6004ENX-ND		ROHM SemiconductorMOSFET N-CH 600V 4A TO220
RoHS: Compliant
Min Qty: 1
Container: Bulk		182In Stock
  • 5000:$0.6118
  • 2500:$0.6440
  • 1000:$0.6900
  • 500:$0.8740
  • 100:$1.0580
  • 10:$1.3570
  • 1:$1.5200
R6004ENX
DISTI # R6004ENX		ROHM SemiconductorTrans MOSFET N-CH 600V ±4A 3-Pin TO-220FM Bulk (Alt: R6004ENX)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Europe - 0
  • 5000:€0.5190
  • 1000:€0.5300
  • 500:€0.6160
  • 250:€0.6340
  • 100:€0.6530
  • 25:€0.6710
  • 5:€0.6890
R6004ENX
DISTI # R6004ENX		ROHM SemiconductorTrans MOSFET N-CH 600V ±4A 3-Pin TO-220FM Bulk - Tape and Reel (Alt: R6004ENX)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$0.4619
  • 3000:$0.4739
  • 2000:$0.5019
  • 1000:$0.5339
  • 500:$0.5689
R6004ENX
DISTI # 755-R6004ENX		ROHM SemiconductorMOSFET 10V Drive Nch MOSFET
RoHS: Compliant		374
  • 1:$1.5000
  • 10:$1.2800
  • 100:$0.9890
  • 500:$0.8740
  • 1000:$0.6890
  • 2500:$0.6110
  • 10000:$0.5880
R6004ENXROHM Semiconductor 4
  • 3:$1.9800
  • 1:$2.6400
R6004ENXROHM SemiconductorRoHS(ship within 1day)6
  • 1:$1.8300
  • 10:$1.3700
  • 50:$0.9100
  • 100:$0.7300
  • 500:$0.6800
  • 1000:$0.6600
R6004ENXROHM Semiconductor 500
  • 1:¥10.9889
  • 100:¥6.2307
  • 500:¥3.9503
R6004ENX
DISTI # 2630086		ROHM SemiconductorMOSFET, N-CH, 600V, 4A, TO-220FM
RoHS: Compliant		0
  • 2500:$0.9710
  • 1000:$1.0400
  • 500:$1.3200
  • 100:$1.6000
  • 10:$2.0500
  • 1:$2.2900
R6004ENX
DISTI # 2630086		ROHM SemiconductorMOSFET, N-CH, 600V, 4A, TO-220FM0
  • 500:£0.5220
  • 250:£0.5570
  • 100:£0.5910
  • 10:£0.8270
  • 1:£1.0400
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Verfügbarkeit
Aktie:
374
Auf Bestellung:
2357
Menge eingeben:
Der aktuelle Preis von R6004ENX dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,50 $
1,50 $
10
1,28 $
12,80 $
100
0,99 $
98,90 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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