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FDG313N

FDG313N
Mfr. #:
FDG313N
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET SC70-6 N-CH 25V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDG313N Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-323-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
950 mA
Rds On - Drain-Source-Widerstand:
350 mOhms
Vgs - Gate-Source-Spannung:
8 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
750 mW
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
2 mm
Produkt:
MOSFET Kleinsignal
Serie:
FDG313N
Transistortyp:
1 N-Channel
Typ:
FET
Breite:
1.25 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
1.5 S
Abfallzeit:
8.5 ns
Produktart:
MOSFET
Anstiegszeit:
8.5 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
17 ns
Typische Einschaltverzögerungszeit:
3 ns
Teil # Aliase:
FDG313N_NL
Gewichtseinheit:
0.000988 oz
Tags
FDG313, FDG31, FDG3, FDG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 25 V 450 mOhm Surface Mount Digital FET Mosfet - SC-70-6
*** Electronics
FAIRCHILD SEMICONDUCTOR FDG313N MOSFET Transistor, N Channel, 950 mA, 25 V, 450 mohm, 4.5 V, 800 mV
***ment14 APAC
MOSFET, N, SMD, 6-SC-70; Transistor Polarity:N Channel; Continuous Drain Current Id:950mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:950mA; Package / Case:SC-70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
***ser
MOSFETs- Power and Small Signal 25V 1.2A N-Channel No-Cancel/No-Return
***ponent Stockers USA
1000 mA 25 V N-CHANNEL Si SMALL SIGNAL MOSFET
***r Electronics
Small Signal Field-Effect Transistor, 1A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 1A SC88/SC70-6
***r Electronics
Small Signal Field-Effect Transistor, 1A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal 25V 1.2A N-Channel
***or
MOSFET N-CH 25V 1A SC88/SC70-6
***emi
P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ
***ment14 APAC
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V
***rchild Semiconductor
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
***ark
MOSFET, N CH, 20V, 0.29OHM, 970mA, SOT-416-3; Transistor Polarity:N Channel; Con
***ure Electronics
N-Channel 20 V 350 mOhm 0.72 nC SMT TrenchMOS Low Level FET - SC-75
***ical
Trans MOSFET N-CH 20V 0.97A 3-Pin SC-75 T/R
***ponent Stockers USA
970 mA 20 V N-CHANNEL Si SMALL SIGNAL MOSFET
***peria
N-channel TrenchMOS extremely low level FET
***ure Electronics
Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23
***ical
Trans MOSFET N-CH 20V 1.2A Automotive 3-Pin SC-59 T/R
***ser
Transistor - FET N-Channel 20V 1.2A
***des Inc SCT
N-Channel Mosfet, 20V VDS, 8±V VGS
***ark
Mosfet Bvdss: 8V~24V Sc59 T&r 3K
***(Formerly Allied Electronics)
N-Channel Enhancement Mode FET SC-59
***ment14 APAC
MOSFET, N CH, 20V, 1.2A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-59; No. of Pins:3; Current Id Max:4A; Package / Case:SC-59; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V
***el Electronic
DIODES INC. - DMN100-7-F - MOSFET Transistor, N Channel, 1.1 A, 30 V, 0.24 ohm, 10 V, 3 V
***nell
MOSFET, N CH, 30V, 1.1A, SC-59; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.24ohm; Rd; Available until stocks are exhausted Alternative available
***ark
MOSFET, N CHANNEL, 30V, 1.1A, SC-59; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
FDG313N
DISTI # FDG313NFSTR-ND		ON SemiconductorMOSFET N-CH 25V 0.95A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    FDG313N
    DISTI # FDG313NFSCT-ND    		ON SemiconductorMOSFET N-CH 25V 0.95A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDG313N
      DISTI # FDG313NFSDKR-ND      		ON SemiconductorMOSFET N-CH 25V 0.95A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDG313N_D87Z
        DISTI # FDG313N_D87Z-ND        		ON SemiconductorMOSFET N-CH 25V 0.95A SC70-6
        RoHS: Compliant
        Min Qty: 10000
        Container: Tape & Reel (TR)        		Limited Supply - Call
          FDG313N
          DISTI # FDG313N          		ON SemiconductorTrans MOSFET N-CH 25V 0.95A 6-Pin SC-70 T/R - Bulk (Alt: FDG313N)
          RoHS: Compliant
          Min Qty: 1087
          Container: Bulk          		Americas - 0
          • 10870:$0.2829
          • 5435:$0.2909
          • 3261:$0.2939
          • 2174:$0.2979
          • 1087:$0.2999
          FDG313N
          DISTI # 512-FDG313N          		ON SemiconductorMOSFET SC70-6 N-CH 25V
          RoHS: Compliant          		0
            FDG313N_D87Z
            DISTI # 512-FDG313N_D87Z            		ON SemiconductorMOSFET SC70-6 N-CH 25V
            RoHS: Compliant            		0
              FDG313NFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 0.95A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
              RoHS: Compliant              		1655418
              • 1000:$0.3000
              • 500:$0.3200
              • 100:$0.3300
              • 25:$0.3500
              • 1:$0.3700
              FDG313NFairchild Semiconductor Corporation950 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET3000
              • 1112:$0.1400
              • 223:$0.1800
              • 1:$0.4000
              FDG313N
              DISTI # 8063371P              		ON SemiconductorMOSFETFAIRCHILDFDG313N, RL260
              • 200:£0.1280
              FDG313NFairchild Semiconductor Corporation 5521
                FDG313NFairchild Semiconductor Corporation 5609
                  FDG313NFairchild Semiconductor Corporation 2617
                    FDG313N
                    DISTI # 1471044                    		ON SemiconductorMOSFET, N, SMD, 6-SC-70
                    RoHS: Compliant                    		1
                    • 500:£0.2010
                    • 250:£0.2200
                    • 100:£0.2390
                    • 10:£0.4130
                    • 1:£0.5120
                    FDG313N
                    DISTI # 1471044RL                    		ON SemiconductorMOSFET, N, SMD, 6-SC-70
                    RoHS: Compliant                    		0
                    • 1:$1.1100
                    FDG313N
                    DISTI # 1471044                    		ON SemiconductorMOSFET, N, SMD, 6-SC-70
                    RoHS: Compliant                    		0
                    • 1:$1.1100
                    Bild Teil # Beschreibung
                    FDG.1B.307.CLAD42

                    Mfr.#: FDG.1B.307.CLAD42

                    OMO.#: OMO-FDG-1B-307-CLAD42-LEMO

                    		 Circular Push Pull Connectors STRAIGHT PLUG LONG VERSION
                    FDG316P

                    Mfr.#: FDG316P

                    OMO.#: OMO-FDG316P-ON-SEMICONDUCTOR

                    		 MOSFET P-CH 30V 1.6A SC70-6
                    FDG6304P-LF

                    Mfr.#: FDG6304P-LF

                    OMO.#: OMO-FDG6304P-LF-1190

                    		 Neu und Original
                    FDG6318PZ

                    Mfr.#: FDG6318PZ

                    OMO.#: OMO-FDG6318PZ-ON-SEMICONDUCTOR

                    		 MOSFET 2P-CH 20V 0.5A SC70-6
                    FDG6318PZ-NL

                    Mfr.#: FDG6318PZ-NL

                    OMO.#: OMO-FDG6318PZ-NL-1190

                    		 Neu und Original
                    FDG6321C-NL

                    Mfr.#: FDG6321C-NL

                    OMO.#: OMO-FDG6321C-NL-1190

                    		 Neu und Original
                    FDG6342L-NL

                    Mfr.#: FDG6342L-NL

                    OMO.#: OMO-FDG6342L-NL-1190

                    		 Neu und Original
                    FDGB0037A

                    Mfr.#: FDGB0037A

                    OMO.#: OMO-FDGB0037A-1190

                    		 Neu und Original
                    FDG6301N-CUT TAPE

                    Mfr.#: FDG6301N-CUT TAPE

                    OMO.#: OMO-FDG6301N-CUT-TAPE-1190

                    		 Neu und Original
                    FDG6321C-CUT TAPE

                    Mfr.#: FDG6321C-CUT TAPE

                    OMO.#: OMO-FDG6321C-CUT-TAPE-1190

                    		 Neu und Original
                    Verfügbarkeit
                    Aktie:
                    Available
                    Auf Bestellung:
                    1000
                    Menge eingeben:
                    Der aktuelle Preis von FDG313N dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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