VEC2315-TL-H

VEC2315-TL-H
Mfr. #:
VEC2315-TL-H
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET PCH+PCH 4V DRIVE SERIES
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
VEC2315-TL-H Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
VEC-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
2.5 A
Rds On - Drain-Source-Widerstand:
137 mOhms
Pd - Verlustleistung:
1 W
Aufbau:
Dual
Verpackung:
Spule
Serie:
VEC2315
Transistortyp:
2 P-Channel
Marke:
ON Semiconductor
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.000582 oz
Tags
VEC2315-T, VEC231, VEC23, VEC2, VEC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Dual P-Channel Power MOSFET, -60V, -2.5A, 137mΩ
***et
Trans MOSFET P-CH 60V 2.5A 8-Pin VEC T/R
***r Electronics
Small Signal Field-Effect Transistor, 2.5A I(D), 60V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Reel / Pch+Pch 4V Drive Series
***emi
Single N-Channel Power MOSFET 60V, 2A, 137mΩ
***et
Trans MOSFET N-CH 60V 2A 3-Pin MCPH T/R
***nell
SMALL SIGNAL FIELD-EFFECT TRANSISTOR;
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 2.8 A, 110 mΩ, SOT-223
***ure Electronics
N-Channel 60 V 0.11Ohm Surface Mount Logic Mosfet - SOT-223
***(Formerly Allied Electronics)
Transistor, N-channel, QFET MOSFET, 60V, 2.8A, 110 mOhm at VGS 10V, SOT-223 | ON Semiconductor FQT13N06LTF
***et
Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R
***nell
MOSFET, N CH, 60V, 2.8A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.8A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.088oh; Available until stocks are exhausted Alternative available
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***et Europe
MOSFET N-CH 60V 2.9A SOT-223
***i-Key Marketplace
SMALL-SIGNAL N-CHANNEL MOSFET
***Yang
Trans MOSFET N-CH 60V 2.9A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled
***p One Stop
Trans MOSFET N-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
Single N-Channel 60 V 120 mOhm 9.7 nC SIPMOS® Small Signal Mosfet - SOT-223
***ark
Mosfet, N-Ch, 60V, 2.9A, 150Deg C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSP320SH6327XTSA1
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***ure Electronics
ZXMN6A11DN8 Series Dual N-Channel 60 V 0.12 Ohm Power MOSFET SMT - SOIC-8
***et
Transistor MOSFET Array Dual N-CH 60V 3.2A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET Dual N-Channel 60V 3.2A SOIC8 | Diodes Inc ZXMN6A11DN8TA
***ment14 APAC
MOSFET, DUAL, N, 60V, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.2A; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Power Dissipation Pd:1.25W; Power Dissipation Pd:2.1W; Pulse Current Idm:13.7A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET; N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 82mohm; Id 3.2A; TSOP-6; Pd 2W
***ure Electronics
N-Channel 60 V 0.01 Ohm 3.3 W Surface Mount Power Mosfet - TSOP-6
*** Source Electronics
Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R / MOSFET N-CH 60V 4.1A 6-TSOP
Teil # Mfg. Beschreibung Aktie Preis
VEC2315-TL-H
DISTI # VEC2315-TL-H-ND
ON SemiconductorMOSFET 2P-CH 60V 2.5A VEC8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    VEC2315-TL-H
    DISTI # VEC2315-TL-H
    ON SemiconductorTrans MOSFET P-CH 60V 2.5A 8-Pin VEC T/R (Alt: VEC2315-TL-H)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
      VEC2315-TL-H
      DISTI # 863-VEC2315-TL-H
      ON SemiconductorMOSFET PCH+PCH 4V DRIVE SERIES
      RoHS: Compliant
      423
      • 1:$0.8200
      • 10:$0.6810
      • 100:$0.4400
      • 1000:$0.3520
      • 3000:$0.2970
      • 9000:$0.2860
      • 24000:$0.2750
      Bild Teil # Beschreibung
      RFSW8000TR7

      Mfr.#: RFSW8000TR7

      OMO.#: OMO-RFSW8000TR7

      RF Switch ICs 5-6500MHz SPDT Iso 30dB @ 2GHz
      PBSS4160PANSX

      Mfr.#: PBSS4160PANSX

      OMO.#: OMO-PBSS4160PANSX

      Bipolar Transistors - BJT 60V 1A NPN/NPN
      NSR05F30NXT5G

      Mfr.#: NSR05F30NXT5G

      OMO.#: OMO-NSR05F30NXT5G

      Schottky Diodes & Rectifiers Schottky Diodes 30V 500mA
      TPS62170DSGT

      Mfr.#: TPS62170DSGT

      OMO.#: OMO-TPS62170DSGT

      Switching Voltage Regulators 3-17V 0.5A 2.5MHZ SD Converter
      NCP186BMX300TAG

      Mfr.#: NCP186BMX300TAG

      OMO.#: OMO-NCP186BMX300TAG

      LDO Voltage Regulators FAST TRANSIENT RESPO
      PBSS4160PANSX

      Mfr.#: PBSS4160PANSX

      OMO.#: OMO-PBSS4160PANSX-NEXPERIA

      Trans GP BJT NPN 60V 1A Automotive 6-Pin DFN-D EP T/R
      RFSW8000TR7

      Mfr.#: RFSW8000TR7

      OMO.#: OMO-RFSW8000TR7-285

      RF Switch ICs 5-6500MHz SPDT Iso 30dB @ 2GHz
      GRM035R60J475ME15D

      Mfr.#: GRM035R60J475ME15D

      OMO.#: OMO-GRM035R60J475ME15D-MURATA-ELECTRONICS

      Cap Ceramic 4.7uF 6.3V X5R 20% Pad SMD 0201 85C T/R
      CRL0603-FW-R270ELF

      Mfr.#: CRL0603-FW-R270ELF

      OMO.#: OMO-CRL0603-FW-R270ELF-BOURNS

      Current Sense Resistors - SMD 0.27ohm 1% 1/10watt
      TPS62170DSGT

      Mfr.#: TPS62170DSGT

      OMO.#: OMO-TPS62170DSGT-TEXAS-INSTRUMENTS

      Voltage Regulators - Switching Regulators 3-17V 0.5A 2.5MHZ SD Converte
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1988
      Menge eingeben:
      Der aktuelle Preis von VEC2315-TL-H dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,82 $
      0,82 $
      10
      0,68 $
      6,81 $
      100
      0,44 $
      44,00 $
      1000
      0,35 $
      352,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Top