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IPAN65R650CEXKSA1

IPAN65R650CEXKSA1
Mfr. #:
IPAN65R650CEXKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPAN65R650CEXKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPAN65R650CEXKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Vds - Drain-Source-Durchbruchspannung:
650 V
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
16.15 mm
Länge:
10.65 mm
Serie:
CoolMOS CE
Breite:
4.85 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Teil # Aliase:
IPAN65R650CE SP001508828
Gewichtseinheit:
0.068784 oz
Tags
IPAN65, IPAN6, IPAN, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
Trans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-220FP Tube, PG-TO220-3, RoHS
***ark
Mosfet, N-Ch, 650V, 10.1A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Teil # Mfg. Beschreibung Aktie Preis
IPAN65R650CEXKSA1
DISTI # V99:2348_16139586		Infineon Technologies AGTrans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-220FP Tube972
  • 500:$0.5725
  • 100:$0.6469
  • 10:$0.8252
  • 1:$0.9562
IPAN65R650CEXKSA1
DISTI # IPAN65R650CEXKSA1-ND		Infineon Technologies AGMOSFET NCH 650V 10.1A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$0.5934
  • 500:$0.7353
  • 100:$0.9304
  • 10:$1.1610
  • 1:$1.3000
IPAN65R650CEXKSA1
DISTI # 32714093		Infineon Technologies AGTrans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-220FP Tube972
  • 500:$0.6154
  • 100:$0.6954
  • 14:$0.8871
IPAN65R650CEXKSA1
DISTI # IPAN65R650CEXKSA1		Infineon Technologies AG600V CoolMOS N-Channel Power MOSFET - Rail/Tube (Alt: IPAN65R650CEXKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.4639
  • 2000:$0.4469
  • 3000:$0.4309
  • 5000:$0.4169
  • 10000:$0.4089
IPAN65R650CEXKSA1
DISTI # SP001508828		Infineon Technologies AG600V CoolMOS N-Channel Power MOSFET (Alt: SP001508828)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 50:€0.7059
  • 100:€0.5509
  • 200:€0.4919
  • 300:€0.4479
  • 500:€0.4199
IPAN65R650CEXKSA1
DISTI # 34AC1642		Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:10.1A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes262
  • 1000:$0.4840
  • 500:$0.6130
  • 100:$0.6940
  • 10:$0.9030
  • 1:$1.0500
IPAN65R650CEXKSA1
DISTI # 726-IPAN65R650CEXKSA		Infineon Technologies AGMOSFET
RoHS: Compliant		0
  • 1:$1.0500
  • 10:$0.9030
  • 100:$0.6940
  • 500:$0.6130
  • 1000:$0.4840
IPAN65R650CEXKSA1
DISTI # 2781164		Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-220FP
RoHS: Compliant		262
  • 100:£0.6610
  • 25:£0.8610
  • 5:£0.9610
IPAN65R650CEXKSA1
DISTI # 2781164		Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-220FP
RoHS: Compliant		262
  • 100:$1.1000
  • 25:$1.3500
  • 5:$1.5500
Bild Teil # Beschreibung
IPAN65R650CEXKSA1

Mfr.#: IPAN65R650CEXKSA1

OMO.#: OMO-IPAN65R650CEXKSA1

 MOSFET
IPAN65R650CEXKSA1

Mfr.#: IPAN65R650CEXKSA1

OMO.#: OMO-IPAN65R650CEXKSA1-INFINEON-TECHNOLOGIES

 MOSFET NCH 650V 10.1A TO220-3
IPAN65R650CE

Mfr.#: IPAN65R650CE

OMO.#: OMO-IPAN65R650CE-1190

 N-CH 650V 10,1A 650mOhm TO220FP
IPAN65R650CE(2)

Mfr.#: IPAN65R650CE(2)

OMO.#: OMO-IPAN65R650CE-2--1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von IPAN65R650CEXKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,05 $
1,05 $
10
0,90 $
9,03 $
100
0,69 $
69,40 $
500
0,61 $
306,50 $
1000
0,48 $
484,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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