SUD08P06-155L-GE3

Mfr. #:: SUD08P06-155L-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET -30V 0.155ohm@-10V -8.4A P-CH
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SUD08P06-155L-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SUD08P06-155L-GE3 Datasheet SUD08P06-155L-GE3 Datasheet (P4-P6)SUD08P06-155L-GE3 Datasheet (P7-P8)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-252-3

Handelsname:: TrenchFET

Verpackung:: Spule

Höhe:: 2.38 mm

Länge:: 6.73 mm

Serie:: SUD

Breite:: 6.22 mm

Marke:: Vishay / Siliconix

Produktart:: MOSFET

Werkspackungsmenge:: 2000

Unterkategorie:: MOSFETs

Gewichtseinheit:: 0.050717 oz

Tags: SUD08P06-155, SUD08P06-15, SUD08P06-1, SUD08, SUD0, SUD

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

SUD08P06-155L-GE3 Beschreibung

***ure Electronics: Single P-Channel 60 V 155 mOhm Surface Mount TrenchFET Power Mosfet - TO-252

***ment14 APAC: MOSFET, P-CH, 20V, -8.2A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Source Voltage Vds:-60V; On Resistance

***icontronic: Power Field-Effect Transistor, 8.2A I(D), 60V, 0.155ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET, P-CH, 60V, 8.2A, 150DEG C, 20.8W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***nell: MOSFET, P-CH, 20V, -8.2A, TO-252; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.2A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2V; Power Dissipation Pd: 20.8W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

***et: Trans MOSFET P-CH 60V 18.6A 3-Pin(2+Tab) TO-252

***ment14 APAC: MOSFET, P, COOLMOS, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:18.6A; Source Voltage Vds:-60V; On Resistance

***SIT Distribution GmbH: Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, P, COOLMOS, D-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:18.6A; Resistance, Rds On:0.13ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:20V; Case Style:DPAK; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:74.4A; External Depth:10.5mm; External Length / Height:2.55mm; No. of Pins:3; Power Dissipation:80W; Power, Pd:80W; Power, Ptot:80W; SMD Marking:18P06P; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Max:4V; Width, External:6.8mm

***ure Electronics: N-Channel 60 V 180 mOhm SMT Enhancement Mode Field Effect Transistor-TO-252-3

***roFlash: Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N, SMD, TO-252, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1.5V; Pow

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***icroelectronics: N-Channel 60V - 0.08Ohm - 12A - DPAK StripFET(TM) II POWER MOSFET

***ure Electronics: N-Channel 60 V 0.1 Ohm Surface Mount STripFET II Power MosFet - TO-252-3

***ark: MOSFET, N CH, 60V, 12A, TO-252, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***SIT Distribution GmbH: Power Field-Effect Transistor, 12A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***emi: P-Channel PowerTrench® MOSFET, 60V, -15A, 100mΩ

***ure Electronics: P-Channel 60 V 100 mOhm Surface Mount PowerTrench Mosfet TO-252-3

*** Stop Electro: Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This 60V P-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.

***ark: MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-15A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-1.6V ;RoHS Compliant: Yes

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -15 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 130 / Gate-Source Voltage V = 20 / Fall Time ns = 22 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.6

***ure Electronics: Single N-Channel 60 V 35 mOhm 10 nC OptiMOS Power Mosfet - TO-252-3

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:29A; On Resistance Rds(On):0.027Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes

***roFlash: Power Field-Effect Transistor, 29A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 60V, 29A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 68W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ure Electronics: Single N-Channel 60 V 8.8 mOhm 36 nC OptiMOS Power Mosfet - TO-252-3

*** Source Electronics: Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK / OptiMOS(TM)3 Power-Transistor

***icontronic: Power Field-Effect Transistor, 50A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 60V, 50A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0071ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SUD08P06-155L-GE3 DISTI # V72:2272_09215296	Vishay Intertechnologies	Trans MOSFET P-CH 60V 8.2A 3-Pin(2+Tab) DPAK	9	1:$0.9809
SUD08P06-155L-GE3 DISTI # V75:2273_09215296	Vishay Intertechnologies	Trans MOSFET P-CH 60V 8.2A 3-Pin(2+Tab) DPAK	0
SUD08P06-155L-GE3 DISTI # V36:1790_09215296	Vishay Intertechnologies	Trans MOSFET P-CH 60V 8.2A 3-Pin(2+Tab) DPAK	0	2000:$0.3954
SUD08P06-155L-GE3 DISTI # SUD08P06-155L-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 60V 8.4A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	16022In Stock	1000:$0.4091 500:$0.5182 100:$0.6273 10:$0.8050 1:$0.9000
SUD08P06-155L-GE3 DISTI # SUD08P06-155L-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 60V 8.4A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	16022In Stock	1000:$0.4091 500:$0.5182 100:$0.6273 10:$0.8050 1:$0.9000
SUD08P06-155L-GE3 DISTI # SUD08P06-155L-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 60V 8.4A DPAK RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	14000In Stock	10000:$0.3390 6000:$0.3522 2000:$0.3707
SUD08P06-155L-GE3 DISTI # 33792053	Vishay Intertechnologies	Trans MOSFET P-CH 60V 8.2A 3-Pin(2+Tab) DPAK	4000	2000:$0.3206
SUD08P06-155L-GE3 DISTI # SUD08P06-155L-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 8.2A 3-Pin TO-252 (Alt: SUD08P06-155L-GE3) RoHS: Compliant Min Qty: 2000	Europe - 0	20000:€0.3289 12000:€0.3539 8000:€0.3829 4000:€0.4449 2000:€0.6529
SUD08P06-155L-GE3 DISTI # SUD08P06-155L-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 8.2A 3-Pin TO-252 - Tape and Reel (Alt: SUD08P06-155L-GE3) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	20000:$0.3229 12000:$0.3319 8000:$0.3409 4000:$0.3559 2000:$0.3669
SUD08P06-155L-GE3 DISTI # 01AC5033	Vishay Intertechnologies	MOSFET, P-CH, 20V, -8.2A, TO-252,Transistor Polarity:P Channel,Continuous Drain Current Id:-8.2A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2V,Power RoHS Compliant: Yes	2285	500:$0.4850 250:$0.5240 100:$0.5640 50:$0.6200 25:$0.6770 10:$0.7340 1:$0.8890
SUD08P06-155L-GE3 DISTI # 01X0089	Vishay Intertechnologies	P-CHANNEL 60-V (D-S) 150C MOSF	0	10000:$0.3690 6000:$0.3770 4000:$0.3920 2000:$0.4350 1000:$0.4790 1:$0.4990
SUD08P06-155L-GE3 DISTI # 781-SUD08P06-155LGE3	Vishay Intertechnologies	MOSFET -30V 0.155ohm@-10V -8.4A P-CH RoHS: Compliant	15698	1:$1.0100 10:$0.8350 100:$0.6400 500:$0.5510 1000:$0.4340 2000:$0.4050 4000:$0.3850 10000:$0.3770
SUD08P06-155L-GE3 DISTI # 1807411	Vishay Intertechnologies	P-CH MOSFET DPAK (TO-252) 60V 155MOHM @, RL	2000	2000:£0.3450
SUD08P06-155L-GE3 DISTI # 2646405	Vishay Intertechnologies	MOSFET, P-CH, 20V, -8.2A, TO-252	2300	1000:£0.3990 500:£0.4120 100:£0.4250 50:£0.5550 5:£0.6230
SUD08P06-155L-GE3 DISTI # 2679715	Vishay Intertechnologies	MOSFET, P-CH, 20V, -8.2A, TO-252 RoHS: Compliant	0	2000:$0.7030
SUD08P06-155L-GE3 DISTI # 2646405	Vishay Intertechnologies	MOSFET, P-CH, 20V, -8.2A, TO-252 RoHS: Compliant	2285	500:$0.7230 100:$0.8410 10:$1.1000 1:$1.3300
SUD08P06-155L-GE3	Vishay Intertechnologies	MOSFET -30V 0.155ohm@-10V -8.4A P-CH	Americas - 14000	2000:$0.3480 4000:$0.3310 10000:$0.3180 20000:$0.3110

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Verfügbarkeit

Aktie:: 15
Auf Bestellung:: 1998
Menge eingeben:

Der aktuelle Preis von SUD08P06-155L-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,01 $~~; ~~1,01 $~~

10: ~~0,84 $~~; ~~8,35 $~~

100: ~~0,64 $~~; ~~64,00 $~~

500: ~~0,55 $~~; ~~275,50 $~~

1000: ~~0,43 $~~; ~~434,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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SUD08P06-155L-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes