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T2G6001528-Q3

T2G6001528-Q3
Mfr. #:
T2G6001528-Q3
Hersteller:
Qorvo
Beschreibung:
RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
T2G6001528-Q3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
T2G6001528-Q3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Qorvo
Produktkategorie:
HF-JFET-Transistoren
RoHS:
Y
Transistortyp:
HEMT
Technologie:
GaN SiC
Verpackung:
Tablett
Serie:
T2G
Marke:
Qorvo
Feuchtigkeitsempfindlich:
ja
Produktart:
HF-JFET-Transistoren
Werkspackungsmenge:
100
Unterkategorie:
Transistoren
Teil # Aliase:
1100001
Tags
T2G6001528-Q, T2G6001, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC- 6 GHz, 18 W, 9 dB, 28 V, GaN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Teil # Mfg. Beschreibung Aktie Preis
T2G6001528-Q3
DISTI # T2G6001528-Q3		QorvoTrans JFET N-CH 32V 5KA 2-Pin NI-200 (Alt: T2G6001528-Q3)
RoHS: Compliant
Min Qty: 100		Asia - 0
    T2G6001528-Q3
    DISTI # 772-T2G6001528-Q3    		QorvoRF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
    RoHS: Compliant    		0
    • 1:$105.7500
    • 25:$95.4400
    T2G6001528-Q3 EVAL BOARD
    DISTI # 772-T2G6001528-Q3EB    		QorvoRF Development Tools DC-6.0GHz 18 Watt 28V GaN Eval Brd
    RoHS: Compliant    		0
    • 1:$875.0000
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    Verfügbarkeit
    Aktie:
    87
    Auf Bestellung:
    2070
    Menge eingeben:
    Der aktuelle Preis von T2G6001528-Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    105,75 $
    105,75 $
    25
    95,44 $
    2 386,00 $
    100
    86,13 $
    8 613,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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