IPI60R165CP

IPI60R165CP
Mfr. #:
IPI60R165CP
Hersteller:
Rochester Electronics, LLC
Beschreibung:
RF Bipolar Transistors MOSFET N-Ch 600V 21A I2PAK-3 CoolMOS CP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPI60R165CP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
CoolMOS CP
Verpackung
Rohr
Teil-Aliasnamen
IPI60R165CPAKSA1 IPI60R165CPXKSA1 SP000680744
Gewichtseinheit
0.084199 oz
Montageart
Durchgangsloch
Handelsname
CoolMOS
Paket-Koffer
I2PAK-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
192 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
5 ns
Anstiegszeit
5 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
21 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Widerstand
165 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
50 ns
Typische-Einschaltverzögerungszeit
12 ns
Kanal-Modus
Erweiterung
Tags
IPI60R16, IPI60R1, IPI60R, IPI60, IPI6, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 650V 21A 3-Pin TO-262 Tube
***ark
MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:21A; On State Resistance:0.165ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:650V; On Resistance Rds(on):165mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:192W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:21A; Package / Case:TO-262; Power Dissipation Pd:192W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
Teil # Mfg. Beschreibung Aktie Preis
IPI60R165CPAKSA1
DISTI # IPI60R165CPAKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 21A TO-262
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
  • 500:$2.6846
IPI60R165CPXKSA1
DISTI # IPI60R165CPXKSA1-ND
Infineon Technologies AGHIGH POWER_LEGACY
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
  • 500:$2.9262
IPI60R165CP
DISTI # IPI60R165CP
Infineon Technologies AGTrans MOSFET N-CH 600V 21A 3-Pin TO-262 Tube - Bulk (Alt: IPI60R165CP)
RoHS: Not Compliant
Min Qty: 171
Container: Bulk
Americas - 0
  • 1710:$1.7900
  • 513:$1.8900
  • 855:$1.8900
  • 342:$1.9900
  • 171:$2.0900
IPI60R165CP
DISTI # SP000276736
Infineon Technologies AGTrans MOSFET N-CH 600V 21A 3-Pin TO-262 Tube (Alt: SP000276736)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 100:€1.6900
  • 500:€1.6900
  • 1000:€1.6900
  • 25:€1.7900
  • 50:€1.7900
  • 1:€1.8900
  • 10:€1.8900
IPI60R165CPAKSA1
DISTI # IPI60R165CPAKSA1
Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS - Rail/Tube (Alt: IPI60R165CPAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
    IPI60R165CPXKSA1
    DISTI # IPI60R165CPXKSA1
    Infineon Technologies AGTrans MOSFET N-CH 650V 21A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI60R165CPXKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube
    Americas - 0
    • 3000:$1.9900
    • 5000:$1.9900
    • 2000:$2.0900
    • 1000:$2.1900
    • 500:$2.2900
    IPI60R165CPXKSA1
    DISTI # 726-IPI60R165CPXKSA1
    Infineon Technologies AGMOSFET N-Ch 650V 21A I2PAK-3
    RoHS: Compliant
    0
      IPI60R165CPInfineon Technologies AGPower Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA
      RoHS: Compliant
      21
      • 1000:$1.9300
      • 500:$2.0400
      • 100:$2.1200
      • 25:$2.2100
      • 1:$2.3800
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von IPI60R165CP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,68 $
      2,68 $
      10
      2,55 $
      25,51 $
      100
      2,42 $
      241,65 $
      500
      2,28 $
      1 141,15 $
      1000
      2,15 $
      2 148,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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