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SIZ926DT-T1-GE3

SIZ926DT-T1-GE3
Mfr. #:
SIZ926DT-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 25V Vds 16V Vgs PowerPAIR 6 x 5
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIZ926DT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ926DT-T1-GE3 DatasheetSIZ926DT-T1-GE3 Datasheet (P4-P6)SIZ926DT-T1-GE3 Datasheet (P7-P9)SIZ926DT-T1-GE3 Datasheet (P10-P12)SIZ926DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Mehr Informationen:
SIZ926DT-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAIR-6x5-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
40 A, 60 A
Rds On - Drain-Source-Widerstand:
2.2 mOhms, 4.8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.2 V
Vgs - Gate-Source-Spannung:
- 12 V, 16 V
Qg - Gate-Ladung:
12.5 nC, 27 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
20.2 W, 40 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
GRÖSSE
Transistortyp:
2 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
40 S, 55 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
12 ns, 17 ns
Typische Einschaltverzögerungszeit:
8 ns, 10 ns
Tags
SIZ92, SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
MOSFET Dual N-Channel 25V 40A@Q1/60A@Q2 8-Pin PowerPAIR T/R
***i-Key
MOSFET 2 N-CH 25V 8-POWERPAIR
***ark
Dual N Channel Mosfet, 60A, 25V; Transistor Polarity:dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.0038Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Bild Teil # Beschreibung
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Mfr.#: SISH625DN-T1-GE3

OMO.#: OMO-SISH625DN-T1-GE3

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BAT54AHMFHT116

Mfr.#: BAT54AHMFHT116

OMO.#: OMO-BAT54AHMFHT116

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Mfr.#: CRCW04021K00FKEDC

OMO.#: OMO-CRCW04021K00FKEDC

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Mfr.#: CRCW040210K0FKEDC

OMO.#: OMO-CRCW040210K0FKEDC-VISHAY-DALE

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BAT54AHMFHT116

Mfr.#: BAT54AHMFHT116

OMO.#: OMO-BAT54AHMFHT116-ROHM-SEMI

 AUTOMOTIVE SCHOTTKY BARRIER DIOD
BAT54CHMFHT116

Mfr.#: BAT54CHMFHT116

OMO.#: OMO-BAT54CHMFHT116-ROHM-SEMI

 AUTOMOTIVE SCHOTTKY BARRIER DIOD
SISH625DN-T1-GE3

Mfr.#: SISH625DN-T1-GE3

OMO.#: OMO-SISH625DN-T1-GE3-VISHAY

 P-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 7 m @ 10V m @ 7.5V 11 m @ 4.5V
CRCW04021K00FKEDC

Mfr.#: CRCW04021K00FKEDC

OMO.#: OMO-CRCW04021K00FKEDC-VISHAY-DALE

 D10/CRCW0402-C 100 1K0 1% ET7
C0603C103K5RACAUTO7411

Mfr.#: C0603C103K5RACAUTO7411

OMO.#: OMO-C0603C103K5RACAUTO7411-1190

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.01uF 0603 X7R 10% AEC-Q200
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von SIZ926DT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,30 $
1,30 $
10
1,07 $
10,70 $
100
0,83 $
82,70 $
500
0,71 $
355,50 $
1000
0,56 $
561,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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