IRF7907PBF

IRF7907PBF
Mfr. #:
IRF7907PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 2N-CH 30V 9.1A/11A 8SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF7907PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7907PBF DatasheetIRF7907PBF Datasheet (P4-P6)IRF7907PBF Datasheet (P7-P9)IRF7907PBF Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
FETs - Arrays
Serie
HEXFETR
Verpackung
Alternative Verpackung für Tuben
Gewichtseinheit
0.019048 oz
Montageart
SMD/SMT
Paket-Koffer
8-SOIC (0.154", 3.90mm Width)
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
8-SO
Aufbau
Dual
FET-Typ
2 N-Channel (Dual)
Leistung max
2W
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
850pF @ 15V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
9.1A, 11A
Rds-On-Max-Id-Vgs
16.4 mOhm @ 9.1A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
Gate-Lade-Qg-Vgs
10nC @ 4.5V
Pd-Verlustleistung
2.0 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
3.4 ns 5.3 ns
Anstiegszeit
9.3 ns 14 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
9.1 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
20.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
8 ns 13 ns
Typische-Einschaltverzögerungszeit
6 ns 8 ns
Qg-Gate-Ladung
6.7 nC
Kanal-Modus
Erweiterung
Tags
IRF7907, IRF790, IRF79, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;ID 9.1 A (Control FET), 11 A (Synchronous FET);SO-8
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
***p One Stop Japan
Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC Tube
***ical
Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R
***Components
MOSFET N-Channel 30V 9.1A/11A SOIC8
***i-Key
MOSFET N-CHAN DUAL 30V 8-SOIC
***ronik
2N-CH 30V 9,1A 11,8mOhm SO8 RoHSconf
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):11.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***nell
MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:11A; Resistance, Rds On:11.8mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:9.1A; Current, Id Cont N Channel 3:11A; Resistance, Rds on N Channel 1:13.7ohm; Resistance, Rds on N Channel 2:9.8ohm
***ment14 APAC
MOSFET,NN CH,30V,9.1A,SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):9.8mohm; Power Dissipation Pd:2W
Teil # Mfg. Beschreibung Aktie Preis
IRF7907PBF
DISTI # IRF7907PBF-ND
Infineon Technologies AGMOSFET 2N-CH 30V 9.1A/11A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    IRF7907PBF
    DISTI # 70017286
    Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,ID 9.1 A (Control FET),11 A (Synchronous FET),SO-8
    RoHS: Compliant
    0
    • 3800:$1.3400
    • 7600:$1.3130
    • 19000:$1.2730
    • 38000:$1.2190
    • 95000:$1.1390
    IRF7907PBF
    DISTI # 942-IRF7907PBF
    Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
    RoHS: Compliant
    0
      IRF7907PBFInternational Rectifier 2849
        IRF7907PBF
        DISTI # 1843031
        Infineon Technologies AGMOSFET,NN CH,30V,9.1A,SO8
        RoHS: Compliant
        0
        • 1:$1.7200
        • 10:$1.5300
        • 100:$1.1900
        • 500:$0.9820
        • 1000:$0.7760
        Bild Teil # Beschreibung
        IRF7904TRPBF

        Mfr.#: IRF7904TRPBF

        OMO.#: OMO-IRF7904TRPBF

        MOSFET MOSFT DUAL NCh 30V 7.6A
        IRF7946TRPbF

        Mfr.#: IRF7946TRPbF

        OMO.#: OMO-IRF7946TRPBF

        MOSFET 40V 198A 1.5mOhm 141nC StrongIRFET
        IRF7905PBF

        Mfr.#: IRF7905PBF

        OMO.#: OMO-IRF7905PBF

        MOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
        IRF7901D1TR

        Mfr.#: IRF7901D1TR

        OMO.#: OMO-IRF7901D1TR-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 6.2A 8SOIC
        IRF7902TRPBF  28K

        Mfr.#: IRF7902TRPBF 28K

        OMO.#: OMO-IRF7902TRPBF-28K-1190

        Neu und Original
        IRF7904TRPBF-1

        Mfr.#: IRF7904TRPBF-1

        OMO.#: OMO-IRF7904TRPBF-1-1190

        MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
        IRF7907PBF

        Mfr.#: IRF7907PBF

        OMO.#: OMO-IRF7907PBF-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 9.1A/11A 8SOIC
        IRF7907PBF-1

        Mfr.#: IRF7907PBF-1

        OMO.#: OMO-IRF7907PBF-1-1190

        Neu und Original
        IRF7907TRPBF

        Mfr.#: IRF7907TRPBF

        OMO.#: OMO-IRF7907TRPBF-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 9.1A/11A 8-SOIC
        IRF7902TRPBF

        Mfr.#: IRF7902TRPBF

        OMO.#: OMO-IRF7902TRPBF-INFINEON-TECHNOLOGIES

        RF Bipolar Transistors MOSFET MOSFT DUAL NCh 30V 9.7A
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        2500
        Menge eingeben:
        Der aktuelle Preis von IRF7907PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,71 $
        1,71 $
        10
        1,62 $
        16,23 $
        100
        1,54 $
        153,77 $
        500
        1,45 $
        726,10 $
        1000
        1,37 $
        1 366,80 $
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