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DMN61D9UW-7

DMN61D9UW-7
Mfr. #:
DMN61D9UW-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN61D9UW-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-323-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
340 mA
Rds On - Drain-Source-Widerstand:
1.2 Ohms
Vgs th - Gate-Source-Schwellenspannung:
500 mV
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
400 pC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
440 mW
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
DMN61D9U
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Vorwärtstranskonduktanz - Min:
200 mS
Abfallzeit:
8.4 ns
Produktart:
MOSFET
Anstiegszeit:
1.8 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
14.4 ns
Typische Einschaltverzögerungszeit:
2.1 ns
Gewichtseinheit:
0.000176 oz
Tags
DMN61D9UW, DMN61D9, DMN61D, DMN61, DMN6, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
DMN61D9UW Series 60 V 350 mA N-Channel Enhancement Mode mosfet - SOT-323-3
***nell
MOSFET, N-CH, 60V, 0.34A, SOT323
***et
MOSFET BVDSS: 41V~60V SOT323 T&R 3K
***ical
N-CHANNEL ENHANCEMENT MODE MOSFET
***ark
Mosfet, N-Ch, 60V, 0.34A, Sot323; Transistor Polarity:n Channel; Continuous Drain Current Id:340Ma; Drain Source Voltage Vds:60V; On Resistance Rds(On):1.2Ohm; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:1V; Power Dissipation Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
DMN61D9UW-7
DISTI # V72:2272_06697482		Zetex / Diodes IncN-CHANNEL ENHANCEMENT MODE MOSFET
RoHS: Compliant		679
  • 500:$0.0670
  • 250:$0.0743
  • 100:$0.0909
  • 25:$0.1947
  • 10:$0.2163
  • 1:$0.3133
DMN61D9UW-7
DISTI # V36:1790_06697482		Zetex / Diodes IncN-CHANNEL ENHANCEMENT MODE MOSFET
RoHS: Compliant		0
  • 1500000:$0.0268
  • 300000:$0.0291
  • 30000:$0.0332
  • 3000:$0.0339
DMN61D9UW-7
DISTI # DMN61D9UW-7DICT-ND		Diodes IncorporatedMOSFET N-CH 60V 0.34A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1942In Stock
  • 1000:$0.0604
  • 500:$0.0888
  • 100:$0.1350
  • 10:$0.2550
  • 1:$0.3100
DMN61D9UW-7
DISTI # DMN61D9UW-7DIDKR-ND		Diodes IncorporatedMOSFET N-CH 60V 0.34A
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1942In Stock
  • 1000:$0.0604
  • 500:$0.0888
  • 100:$0.1350
  • 10:$0.2550
  • 1:$0.3100
DMN61D9UW-7
DISTI # DMN61D9UW-7DITR-ND		Diodes IncorporatedMOSFET N-CH 60V 0.34A
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 150000:$0.0306
  • 75000:$0.0345
  • 30000:$0.0368
  • 15000:$0.0391
  • 6000:$0.0460
  • 3000:$0.0529
DMN61D9UW-7
DISTI # 27608769		Zetex / Diodes IncN-CHANNEL ENHANCEMENT MODE MOSFET
RoHS: Compliant		679
  • 295:$0.3133
DMN61D9UW-7
DISTI # DMN61D9UW-7		Diodes IncorporatedMOSFET BVDSS: 41V~60V SOT323 T&R 3K (Alt: DMN61D9UW-7)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Europe - 3000
  • 30000:€0.0249
  • 18000:€0.0266
  • 12000:€0.0304
  • 6000:€0.0326
  • 3000:€0.0450
DMN61D9UW-7
DISTI # DMN61D9UW-7		Diodes IncorporatedMOSFET BVDSS: 41V~60V SOT323 T&R 3K - Tape and Reel (Alt: DMN61D9UW-7)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.0229
  • 18000:$0.0234
  • 12000:$0.0245
  • 6000:$0.0257
  • 3000:$0.0270
DMN61D9UW-7
DISTI # 07AH3786		Diodes IncorporatedMOSFET, N-CH, 60V, 0.34A, SOT323,Transistor Polarity:N Channel,Continuous Drain Current Id:340mA,Drain Source Voltage Vds:60V,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:5V,Threshold Voltage Vgs:1V,Power Dissipation RoHS Compliant: Yes2700
  • 1000:$0.0600
  • 500:$0.0690
  • 250:$0.0780
  • 100:$0.0880
  • 50:$0.1280
  • 25:$0.1690
  • 10:$0.2090
  • 1:$0.3030
DMN61D9UW-13
DISTI # 621-DMN61D9UW-13		Diodes IncorporatedMOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
RoHS: Compliant		8945
  • 1:$0.3000
  • 10:$0.2070
  • 100:$0.0870
  • 1000:$0.0590
  • 2500:$0.0460
  • 10000:$0.0400
  • 20000:$0.0370
  • 50000:$0.0350
DMN61D9UW-7
DISTI # 621-DMN61D9UW-7		Diodes IncorporatedMOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
RoHS: Compliant		3886
  • 1:$0.3000
  • 10:$0.2070
  • 100:$0.0870
  • 1000:$0.0590
  • 3000:$0.0460
  • 9000:$0.0400
  • 24000:$0.0370
  • 45000:$0.0350
DMN61D9UW-7
DISTI # 3127349		Diodes IncorporatedMOSFET, N-CH, 60V, 0.34A, SOT323
RoHS: Compliant		2700
  • 5000:$0.0500
  • 1000:$0.0600
  • 500:$0.0900
  • 250:$0.1200
  • 100:$0.1300
  • 25:$0.3000
  • 5:$0.3100
DMN61D9UW-7
DISTI # 3127349		Diodes IncorporatedMOSFET, N-CH, 60V, 0.34A, SOT3232700
  • 500:£0.0498
  • 250:£0.0651
  • 100:£0.0704
  • 25:£0.1720
  • 5:£0.1770
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von DMN61D9UW-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,30 $
0,30 $
10
0,21 $
2,07 $
100
0,09 $
8,70 $
1000
0,06 $
59,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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