IPI100N04S3-03

IPI100N04S3-03
Mfr. #:
IPI100N04S3-03
Hersteller:
Rochester Electronics, LLC
Beschreibung:
MOSFET N-Ch 40V 100A I2PAK-3 OptiMOS-T
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPI100N04S3-03 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
OptiMOS-T
Verpackung
Rohr
Teil-Aliasnamen
IPI100N04S303AKSA1 IPI100N04S303XK SP000261223
Gewichtseinheit
0.084199 oz
Montageart
Durchgangsloch
Handelsname
OptiMOS
Paket-Koffer
I2PAK-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
214 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
17 ns
Anstiegszeit
16 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
100 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Rds-On-Drain-Source-Widerstand
3.3 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
46 ns
Typische-Einschaltverzögerungszeit
30 ns
Kanal-Modus
Erweiterung
Tags
IPI100N04S3, IPI100N04, IPI100N0, IPI100N, IPI10, IPI1, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-262
*** Electronic Components
MOSFET N-CH 40V 100A TO262-3
***i-Key
N-CHANNEL POWER MOSFET
***el Electronic
CAP CER 22UF 6.3V X5R 0603
***hard Electronics
Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
***emi
PowerTrench® MOSFET, N-Channel, 40V, 110A, 2.2mΩ
***ical
Trans MOSFET N-CH 40V 110A Automotive 3-Pin TO-262AB Tube
***r Electronics
Power Field-Effect Transistor, 110A I(D), 40V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
***ical
Trans MOSFET N-CH 40V 193A Automotive 3-Pin(3+Tab) TO-262 Tube
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; Electric Power Steering; Relay Replacement
***nell
MOSFET, 40V, 120A, Q101, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:163W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***ineon SCT
40V, N-Ch, 2.1 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T2, PG-TO262-3-3, RoHS
***ical
Trans MOSFET N-CH 40V 120A Automotive 3-Pin(3+Tab) TO-262 Tube
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***ineon SCT
40V, N-Ch, 2.5 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T2, PG-TO262-3-3, RoHS
***ical
Trans MOSFET N-CH 40V 90A Automotive 3-Pin(3+Tab) TO-262 Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 90A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
Mosfet, Aec-Q101, N-Ch, 40V, To-262; Transistor Polarity:n Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0023Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
Teil # Mfg. Beschreibung Aktie Preis
IPI100N04S303AKSA1
DISTI # IPI100N04S303AKSA1-ND
Infineon Technologies AGMOSFET N-CH 40V 100A TO262-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    IPI100N04S303MATMA2
    DISTI # IPI100N04S303MATMA2
    Infineon Technologies AGMOSFET N-CHANNEL 30/40V - Tape and Reel (Alt: IPI100N04S303MATMA2)
    RoHS: Compliant
    Min Qty: 700
    Container: Reel
    Americas - 0
      IPI100N04S3-03Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA
      RoHS: Compliant
      722
      • 1000:$0.8200
      • 500:$0.8600
      • 100:$0.8900
      • 25:$0.9300
      • 1:$1.0000
      IPI100N04S3-03
      DISTI # 726-IPI100N04S3-03
      Infineon Technologies AGMOSFET N-Ch 40V 100A I2PAK-3 OptiMOS-T
      RoHS: Compliant
      0
        IPI100N04S303AKSA1
        DISTI # N/A
        Infineon Technologies AGMOSFET N-CHANNEL_30/40V0
          IPI100N04S3-03M
          DISTI # 726-IPI100N04S3-03M
          Infineon Technologies AGMOSFET N-Ch 40V 100A I2PAK-3
          RoHS: Compliant
          0
            IPI100N04S303MATMA2
            DISTI # N/A
            Infineon Technologies AGMOSFET N-CHANNEL_30/40V0
              Bild Teil # Beschreibung
              IPI100N12S305AKSA1

              Mfr.#: IPI100N12S305AKSA1

              OMO.#: OMO-IPI100N12S305AKSA1

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              Mfr.#: IPI100N04S4H2AKSA1

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              MOSFET N-CHANNEL_30/40V
              IPI100N04S303MATMA2

              Mfr.#: IPI100N04S303MATMA2

              OMO.#: OMO-IPI100N04S303MATMA2-1190

              MOSFET N-CHANNEL 30/40V - Tape and Reel (Alt: IPI100N04S303MATMA2)
              IPI100N12S305AKSA1

              Mfr.#: IPI100N12S305AKSA1

              OMO.#: OMO-IPI100N12S305AKSA1-INFINEON-TECHNOLOGIES

              MOSFET N-CHANNEL_100+
              IPI100N06S3-04

              Mfr.#: IPI100N06S3-04

              OMO.#: OMO-IPI100N06S3-04-INFINEON-TECHNOLOGIES

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              Mfr.#: IPI100N10S305XK

              OMO.#: OMO-IPI100N10S305XK-1190

              Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI100N10S305AKSA1)
              IPI100N04S3

              Mfr.#: IPI100N04S3

              OMO.#: OMO-IPI100N04S3-1190

              Neu und Original
              IPI100N08N3

              Mfr.#: IPI100N08N3

              OMO.#: OMO-IPI100N08N3-1190

              Neu und Original
              IPI100N04S3-03M

              Mfr.#: IPI100N04S3-03M

              OMO.#: OMO-IPI100N04S3-03M-128

              MOSFET N-Ch 40V 100A I2PAK-3
              IPI100N04S3-03

              Mfr.#: IPI100N04S3-03

              OMO.#: OMO-IPI100N04S3-03-128

              MOSFET N-Ch 40V 100A I2PAK-3 OptiMOS-T
              Verfügbarkeit
              Aktie:
              Available
              Auf Bestellung:
              1000
              Menge eingeben:
              Der aktuelle Preis von IPI100N04S3-03 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
              Referenzpreis (USD)
              Menge
              Stückpreis
              ext. Preis
              1
              1,36 $
              1,36 $
              10
              1,30 $
              12,97 $
              100
              1,23 $
              122,85 $
              500
              1,16 $
              580,15 $
              1000
              1,09 $
              1 092,00 $
              Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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