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NUS5530MNR2G

NUS5530MNR2G
Mfr. #:
NUS5530MNR2G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET INTEGRATED POWER BJT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NUS5530MNR2G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NUS5530MNR2G DatasheetNUS5530MNR2G Datasheet (P4-P6)NUS5530MNR2G Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DFN-8
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
3.9 A
Rds On - Drain-Source-Widerstand:
200 Ohms
Vgs - Gate-Source-Spannung:
35 V
Pd - Verlustleistung:
635 mW
Verpackung:
Spule
Produkt:
MOSFET Kleinsignal
Serie:
NUS5530MN
Marke:
ON Semiconductor
Vorwärtstranskonduktanz - Min:
12 S
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.001319 oz
Tags
NUS5, NUS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
ON Semi NUS5530MNR2G Dual PNP Bipolar Transistor; 2 A; 35 V; 8-Pin DFN
***th Star Micro
NUS5530MN: Integrated Power MOSFET 20V 3.9A 60 mOhm Dual P-Channel with PNP Low VCE Switching Transistor DFN8
***ark
Transistor,mos-Bjt Power Module,independent,35V V(Br)Ceo,2A I(C)
***et
Integrated Power MOSFET with PNP 8-Pin DFN EP T/R
***ser
Transistors Bipolar- Bias Resistor INTEGRATED POWER BJT
***i-Key
IC MOSFET W/PNP SW TRANS 8-DFN
Teil # Mfg. Beschreibung Aktie Preis
NUS5530MNR2G
DISTI # V36:1790_07283721		ON SemiconductorIntegrated Power MOSFET with PNP 8-Pin DFN EP T/R
RoHS: Compliant		0
    NUS5530MNR2G
    DISTI # NUS5530MNR2GOSTR-ND    		ON SemiconductorIC MOSFET W/PNP SW TRANS 8-DFN
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 3000:$0.6031
    NUS5530MNR2G
    DISTI # NUS5530MNR2G    		ON SemiconductorIntegrated Power MOSFET with PNP 8-Pin DFN EP T/R - Tape and Reel (Alt: NUS5530MNR2G)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.4829
    • 6000:$0.4799
    • 12000:$0.4739
    • 18000:$0.4679
    • 30000:$0.4559
    NUS5530MNR2G
    DISTI # NUS5530MNR2G    		ON SemiconductorIntegrated Power MOSFET with PNP 8-Pin DFN EP T/R - Bulk (Alt: NUS5530MNR2G)
    RoHS: Compliant
    Min Qty: 610
    Container: Bulk    		Americas - 0
    • 610:$0.5349
    • 612:$0.5319
    • 1222:$0.5249
    • 3050:$0.5179
    • 6100:$0.5059
    NUS5530MNR2G
    DISTI # 70465550    		ON SemiconductorON Semi NUS5530MNR2G Dual PNP Bipolar Transistor,2 A,35 V,8-Pin DFN
    RoHS: Compliant    		0
    • 20:$0.5300
    • 50:$0.5200
    • 100:$0.5100
    • 500:$0.5000
    NUS5530MNR2G
    DISTI # 863-NUS5530MNR2G    		ON SemiconductorMOSFET INTEGRATED POWER BJT
    RoHS: Compliant    		0
    • 3000:$0.4930
    • 9000:$0.4740
    NUS5530MNR2GON SemiconductorPower Field-Effect Transistor, 3.9A I(D), 20V, 0.083ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		105255
    • 1000:$0.5400
    • 500:$0.5700
    • 100:$0.5900
    • 25:$0.6200
    • 1:$0.6600
    NUS5530MNR2GON Semiconductor 1780
      Bild Teil # Beschreibung
      NUS5530MNR2G

      Mfr.#: NUS5530MNR2G

      OMO.#: OMO-NUS5530MNR2G

      		 MOSFET INTEGRATED POWER BJT
      NUS5530MN

      Mfr.#: NUS5530MN

      OMO.#: OMO-NUS5530MN-1190

      		 Neu und Original
      NUS5531MTR2G

      Mfr.#: NUS5531MTR2G

      OMO.#: OMO-NUS5531MTR2G-ON-SEMICONDUCTOR

      		 MOSFET/BJT SGL P-CH 12V 8-WDFN
      NUS5530MNR2G

      Mfr.#: NUS5530MNR2G

      OMO.#: OMO-NUS5530MNR2G-ON-SEMICONDUCTOR

      		 IGBT Transistors MOSFET INTEGRATED POWER BJT
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von NUS5530MNR2G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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