SIS890DN-T1-GE3

SIS890DN-T1-GE3
Mfr. #:
SIS890DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIS890DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIS890DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
19.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
29 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
3.3 mm
Serie:
SIS
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
25 S
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
16 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
SIS890DN-GE3
Tags
SIS89, SIS8, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 23.5 mOhm 52 W TrenchFET Power Mosfet - PowerPAK-1212-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0195Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes
***nell
MOSFET, N-CH, 100V, PPAK-1212; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0195ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Teil # Mfg. Beschreibung Aktie Preis
SIS890DN-T1-GE3
DISTI # V72:2272_07434473
Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
2450
  • 1000:$0.6140
  • 500:$0.6955
  • 250:$0.7063
  • 100:$0.7846
  • 25:$0.9612
  • 10:$0.9649
  • 1:$1.1125
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 100V 30A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
36In Stock
  • 1000:$0.6883
  • 500:$0.8718
  • 100:$1.1242
  • 10:$1.4220
  • 1:$1.6100
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 100V 30A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
36In Stock
  • 1000:$0.6883
  • 500:$0.8718
  • 100:$1.1242
  • 10:$1.4220
  • 1:$1.6100
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 100V 30A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.6237
SIS890DN-T1-GE3
DISTI # 31038280
Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
3000
  • 3000:$0.6804
SIS890DN-T1-GE3
DISTI # 31016418
Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
2450
  • 1000:$0.6140
  • 500:$0.6955
  • 250:$0.7063
  • 100:$0.7846
  • 25:$0.9612
  • 13:$0.9649
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SIS890DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.7249
  • 6000:$0.7029
  • 12000:$0.6749
  • 18000:$0.6559
  • 30000:$0.6379
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R (Alt: SIS890DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SIS890DN-T1-GE3
    DISTI # SIS890DN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R (Alt: SIS890DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 3000:€0.9729
    • 6000:€0.6979
    • 12000:€0.5659
    • 18000:€0.4999
    • 30000:€0.4789
    SIS890DN-T1-GE3
    DISTI # 70AC6484
    Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R - Product that comes on tape, but is not reeled (Alt: 70AC6484)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 1:$1.6100
    • 25:$1.4200
    • 50:$1.2700
    • 100:$1.1200
    • 250:$0.9980
    • 500:$0.8710
    • 1000:$0.6880
    SIS890DN-T1-GE3
    DISTI # 70AC6484
    Vishay Intertechnologies 2885
    • 1:$1.6100
    • 25:$1.4200
    • 50:$1.2700
    • 100:$1.1200
    • 250:$0.9980
    • 500:$0.8710
    • 1000:$0.6880
    SIS890DN-T1-GE3.
    DISTI # 30AC0125
    Vishay IntertechnologiesN-CHANNEL 100V POWERPAK 1212-8 THUNDERFET MOSFET 23.5MOHM@10V , ROHS COMPLIANT: YES0
    • 1:$0.6750
    • 3000:$0.6750
    SIS890DN-T1-GE3
    DISTI # 78-SIS890DN-T1-GE3
    Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant
    4625
    • 1:$1.4200
    • 10:$1.1700
    • 100:$0.8960
    • 500:$0.7700
    • 1000:$0.6760
    • 3000:$0.6750
    SIS890DN-T1-GE3
    DISTI # 2283693
    Vishay IntertechnologiesMOSFET, N-CH, 100V, PPAK-1212
    RoHS: Compliant
    2001
    • 1:$2.2500
    • 10:$1.8500
    • 100:$1.4200
    • 500:$1.2200
    • 1000:$1.0800
    • 3000:$1.0800
    SIS890DN-T1-GE3
    DISTI # 2283693
    Vishay IntertechnologiesMOSFET, N-CH, 100V, PPAK-1212
    RoHS: Compliant
    2371
    • 5:£1.1100
    • 25:£1.0000
    • 100:£0.7680
    • 250:£0.7150
    • 500:£0.6610
    SIS890DN-T1-GE3
    DISTI # C1S803603778538
    Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
    RoHS: Compliant
    2450
    • 250:$0.7057
    • 100:$0.7841
    • 25:$0.9602
    • 10:$0.9640
    SIS890DN-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8Americas - 15000
      Bild Teil # Beschreibung
      TMS37157IRSARG4

      Mfr.#: TMS37157IRSARG4

      OMO.#: OMO-TMS37157IRSARG4

      RFID Transponders Pass Lo Freq Interf Dev W/ EEPROM
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      Mfr.#: BSP135H6327XTSA1

      OMO.#: OMO-BSP135H6327XTSA1

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      OMO.#: OMO-VJ1812A153FXAAT

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      CRM2010-FX-R100ELF

      Mfr.#: CRM2010-FX-R100ELF

      OMO.#: OMO-CRM2010-FX-R100ELF

      Thick Film Resistors - SMD 1.0W 1% 0.1 Ohm
      1206SFS125F/63-2

      Mfr.#: 1206SFS125F/63-2

      OMO.#: OMO-1206SFS125F-63-2

      Surface Mount Fuses Slow Blow
      12065A103JAT2A

      Mfr.#: 12065A103JAT2A

      OMO.#: OMO-12065A103JAT2A-AVX

      Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 0.01uF 5% C0G 1206 SIZE
      ETH1-460LD

      Mfr.#: ETH1-460LD

      OMO.#: OMO-ETH1-460LD-1190

      Audio Transformers / Signal Transformers ETH1 60W 4pairs PoE+ Magnetic Module
      1206SFS125F/63-2

      Mfr.#: 1206SFS125F/63-2

      OMO.#: OMO-1206SFS125F-63-2-LITTELFUSE

      Surface Mount Fuses Slow Blow
      VJ1812A153FXAAT

      Mfr.#: VJ1812A153FXAAT

      OMO.#: OMO-VJ1812A153FXAAT-VISHAY

      Multilayer Ceramic Capacitors MLCC - SMD/SMT .015uF 50volts C0G 1%
      TMS37157IRSARG4

      Mfr.#: TMS37157IRSARG4

      OMO.#: OMO-TMS37157IRSARG4-TEXAS-INSTRUMENTS

      RFID Transponders Pass Lo Freq Interf Dev W/ EEPROM
      Verfügbarkeit
      Aktie:
      15
      Auf Bestellung:
      1998
      Menge eingeben:
      Der aktuelle Preis von SIS890DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,41 $
      1,41 $
      10
      1,16 $
      11,60 $
      100
      0,90 $
      89,50 $
      500
      0,77 $
      384,50 $
      1000
      0,61 $
      607,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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