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FQPF6N80CT

FQPF6N80CT
Mfr. #:
FQPF6N80CT
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 800V N-Ch Adv Q-FET C-Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQPF6N80CT Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
5.5 A
Rds On - Drain-Source-Widerstand:
2.5 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
51 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FQPF6N80C
Transistortyp:
1 N-Channel
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
5.4 S
Abfallzeit:
44 ns
Produktart:
MOSFET
Anstiegszeit:
65 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
47 ns
Typische Einschaltverzögerungszeit:
26 ns
Gewichtseinheit:
0.080072 oz
Tags
FQPF6N80C, FQPF6N80, FQPF6N8, FQPF6N, FQPF6, FQPF, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220F
***Yang
Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:5.5A; Resistance, Rds On:2.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:22A; No. of Pins:3; Power Dissipation:51W; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220F
***ow.cn
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 800V, 6.6A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.57ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V;
***r Electronics
Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***va Crawler
N-channel 800 V, 1.5 Ohm typ., 5.2 A SuperMESH Power MOSFET in a TO-220FP package
***ical
Trans MOSFET N-CH 800V 5.2A 3-Pin(3+Tab) TO-220FP Tube
***el Electronic
MSP430F563x Mixed Signal Microcontroller 113-BGA MICROSTAR JUNIOR -40 to 85
***ponent Stockers USA
5.2 A 800 V 1.8 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***nell
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.2A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipat
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-220F
***ure Electronics
N-Channel 900 V 2.3 Ohm Through Hole Mosfet - TO-220F
***ical
Trans MOSFET N-CH 900V 6A 3-Pin(3+Tab) TO-220FP Rail
***enic
900V 6A 56W 2.3´Î@10V3A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ment14 APAC
MOSFET, N CH, 900V, 6A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Source Voltage Vds:900V; On Resistance
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Variants: Enhancement mode Power dissipation: 56 W
*** Stop Electro
Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, 900V; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 56W; Transistor Case Style: TO-220F; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Termination Type: Through Hole; Transistor Type: Enhancement; Voltage Vds Typ: 900V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 900 V, 1.56 Ohm, 5.8 A TO-220FP Zener-protected SuperMESH(TM) Power MOSFET
***ure Electronics
Single N-Channel 900 V 2 Ohm 60.5 nC 30 W Silicon Flange Mount Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 900V 5.8A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.8A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 1.56ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipa
***r Electronics
Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, TO-220F
***Yang
Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 6.3A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
N-channel 800 V, 1.9 Ohm, 4.3 A, Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
*** Source Electronics
Trans MOSFET N-CH 800V 4.3A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 4.3A TO-220FP
***ark
N CHANNEL MOSFET, 800V, 4.3A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
FQPF6N80CT
DISTI # FQPF6N80CT-ND		ON SemiconductorMOSFET N-CH 800V 5.5A TO-220F
RoHS: Compliant
Min Qty: 1
Container: Tube		757In Stock
  • 500:$1.3296
  • 100:$1.7095
  • 10:$2.1270
  • 1:$2.3600
FQPF6N80CT
DISTI # FQPF6N80CT		ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF6N80CT)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.8239
  • 2000:$0.8189
  • 4000:$0.8079
  • 6000:$0.7979
  • 10000:$0.7779
FQPF6N80CT
DISTI # FQPF6N80CT		ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail (Alt: FQPF6N80CT)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.3049
  • 10:€1.0679
  • 25:€0.9129
  • 50:€0.8289
  • 100:€0.8159
  • 500:€0.8029
  • 1000:€0.7909
FQPF6N80CTFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		70
  • 1000:$1.1800
  • 500:$1.2400
  • 100:$1.2900
  • 25:$1.3500
  • 1:$1.4500
FQPF6N80CT
DISTI # 512-FQPF6N80CT		ON SemiconductorMOSFET 800V N-Ch Adv Q-FET C-Series
RoHS: Compliant		734
  • 1:$2.0400
  • 10:$1.7300
  • 100:$1.3900
  • 500:$1.2100
  • 1000:$1.0100
  • 2000:$0.9330
  • 5000:$0.8980
Bild Teil # Beschreibung
FQP6N80C

Mfr.#: FQP6N80C

OMO.#: OMO-FQP6N80C

 MOSFET 800V N-Ch Q-FET advance C-Series
RC2512FK-0718R2L

Mfr.#: RC2512FK-0718R2L

OMO.#: OMO-RC2512FK-0718R2L-YAGEO

 Res Thick Film 2512 18.2 Ohm 1% 1W ±100ppm/C Molded SMD Embossed T/R
FQP6N80C

Mfr.#: FQP6N80C

OMO.#: OMO-FQP6N80C-ON-SEMICONDUCTOR

 MOSFET N-CH 800V 5.5A TO-220
Verfügbarkeit
Aktie:
732
Auf Bestellung:
2715
Menge eingeben:
Der aktuelle Preis von FQPF6N80CT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,00 $
2,00 $
10
1,69 $
16,90 $
100
1,36 $
136,00 $
500
1,18 $
590,00 $
1000
0,99 $
990,00 $
2000
0,92 $
1 834,00 $
5000
0,88 $
4 415,00 $
10000
0,85 $
8 500,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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