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IPB065N10N3GATMA1

IPB065N10N3GATMA1
Mfr. #:
IPB065N10N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB065N10N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
5.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
64 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
150 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
50 S
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
37 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
37 ns
Typische Einschaltverzögerungszeit:
19 ns
Teil # Aliase:
G IPB065N10N3 SP001232588
Gewichtseinheit:
0.139332 oz
Tags
IPB065N1, IPB065, IPB06, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 6.5 mOhm 51 nC OptiMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Teil # Mfg. Beschreibung Aktie Preis
IPB065N10N3GATMA1
DISTI # V72:2272_06383349		Infineon Technologies AGTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		638
  • 500:$1.2421
  • 250:$1.4357
  • 100:$1.4504
  • 25:$1.8232
  • 10:$1.8416
  • 1:$2.4027
IPB065N10N3GATMA1
DISTI # V36:1790_06383349		Infineon Technologies AGTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB065N10N3GATMA1
    DISTI # IPB065N10N3GATMA1-ND    		Infineon Technologies AGMOSFET N-CH TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 1000:$1.2373
    IPB065N10N3GATMA1
    DISTI # 30331033    		Infineon Technologies AGTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		638
    • 500:$1.3353
    • 250:$1.5434
    • 100:$1.5592
    • 25:$1.9599
    • 10:$1.9797
    • 6:$2.5829
    IPB065N10N3GATMA1
    DISTI # IPB065N10N3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB065N10N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$1.0319
    • 6000:$1.0509
    • 4000:$1.0869
    • 2000:$1.1279
    • 1000:$1.1702
    IPB065N10N3GATMA1
    DISTI # 726-IPB065N10N3GA    		Infineon Technologies AGMOSFET MV POWER MOS
    RoHS: Compliant    		892
    • 1:$2.2000
    • 10:$1.8700
    • 100:$1.5000
    • 500:$1.3100
    • 1000:$1.0900
    IPB065N10N3GATMA1Infineon Technologies AG 
    RoHS: Not Compliant    		1000
    • 1000:$0.9600
    • 500:$1.0100
    • 100:$1.0500
    • 25:$1.1000
    • 1:$1.1800
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    Verfügbarkeit
    Aktie:
    872
    Auf Bestellung:
    2855
    Menge eingeben:
    Der aktuelle Preis von IPB065N10N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,20 $
    2,20 $
    10
    1,87 $
    18,70 $
    100
    1,50 $
    150,00 $
    500
    1,31 $
    655,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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