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SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3
Mfr. #:
SIHJ10N60E-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs PowerPAK SO-8L
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHJ10N60E-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHJ10N60E-T1-GE3 DatasheetSIHJ10N60E-T1-GE3 Datasheet (P4-P6)SIHJ10N60E-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SIHJ10N60E-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8L-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
10 A
Rds On - Drain-Source-Widerstand:
313 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
25 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
89 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
E
Marke:
Vishay / Siliconix
Abfallzeit:
13 ns
Produktart:
MOSFET
Anstiegszeit:
24 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
31 ns
Typische Einschaltverzögerungszeit:
16 ns
Gewichtseinheit:
0.017870 oz
Tags
SIHJ, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-CH 600V 10A 8-Pin PowerPAK SO T/R
***ure Electronics
600Volt, 10Amp, 360mohm, PPAKSO-8
***ark
Mosfet, N-Ch, 600V, 10A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.313Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHJ10N60E-T1-GE3
DISTI # V72:2272_17600390		Vishay IntertechnologiesSIHJ10N60E-T1-GE3**MULT1
9172
3106950		2705
  • 1000:$1.3580
  • 500:$1.6170
  • 250:$1.8610
  • 100:$1.8720
  • 50:$2.2780
  • 25:$2.4120
  • 10:$2.4140
  • 1:$3.1823
SIHJ10N60E-T1-GE3
DISTI # SIHJ10N60E-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 10A POWERPAKSO
RoHS: Compliant
Min Qty: 1
Container: Tube		1709In Stock
  • 6000:$1.2886
  • 3000:$1.3381
  • 500:$1.7346
  • 100:$2.1113
  • 25:$2.4780
  • 10:$2.6270
  • 1:$2.9200
SIHJ10N60E-T1-GE3
DISTI # 29528986		Vishay IntertechnologiesSIHJ10N60E-T1-GE3**MULT1
9172
3106950		2705
  • 6:$3.1823
SIHJ10N60E-T1-GE3
DISTI # SIHJ10N60E-T1-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 10A 4-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIHJ10N60E-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 12000:$1.1900
  • 18000:$1.1900
  • 30000:$1.1900
  • 3000:$1.2900
  • 6000:$1.2900
SIHJ10N60E-T1-GE3
DISTI # SIHJ10N60E-T1-GE3		Vishay IntertechnologiesTransistor MOSFET N-CH 600V 10A 8-Pin PowerPAK SO T/R (Alt: SIHJ10N60E-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 500:€1.1900
  • 1000:€1.1900
  • 50:€1.2900
  • 100:€1.2900
  • 25:€1.4900
  • 10:€1.7900
  • 1:€2.5900
SIHJ10N60E-T1-GE3
DISTI # 20AC3838		Vishay IntertechnologiesN-CHANNEL 600V0
  • 10000:$1.1800
  • 6000:$1.2300
  • 4000:$1.2800
  • 2000:$1.4200
  • 1000:$1.5000
  • 1:$1.5900
SIHJ10N60E-T1-GE3
DISTI # 78-SIHJ10N60E-T1-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs PowerPAK SO-8L
RoHS: Compliant		3336
  • 1:$2.9300
  • 10:$2.4300
  • 100:$1.8800
  • 500:$1.6500
  • 1000:$1.3600
  • 3000:$1.2700
  • 6000:$1.2200
SIHJ10N60E-T1-GE3
DISTI # 2708303		Vishay IntertechnologiesMOSFET, N-CH, 600V, 10A, POWERPAK SO2910
  • 500:£1.1400
  • 250:£1.2200
  • 100:£1.3000
  • 10:£1.6700
  • 1:£2.2900
SIHJ10N60E-T1-GE3
DISTI # 2708303		Vishay IntertechnologiesMOSFET, N-CH, 600V, 10A, POWERPAK SO
RoHS: Compliant		2920
  • 6000:$2.0000
  • 3000:$2.0200
  • 500:$2.6200
  • 100:$3.1900
  • 25:$3.7400
  • 10:$3.9600
  • 1:$4.4000
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von SIHJ10N60E-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,93 $
2,93 $
10
2,43 $
24,30 $
100
1,88 $
188,00 $
500
1,65 $
825,00 $
1000
1,36 $
1 360,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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