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FCB20N60FTM

FCB20N60FTM
Mfr. #:
FCB20N60FTM
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 600V 20A D2PAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCB20N60FTM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
FETs - Einzeln
Serie
SuperFET
Verpackung
Digi-ReelR Alternative Verpackung
Gewichtseinheit
0.046296 oz
Montageart
SMD/SMT
Paket-Koffer
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
D2PAK
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
208W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
600V
Eingangskapazität-Ciss-Vds
3080pF @ 25V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
20A (Tc)
Rds-On-Max-Id-Vgs
190 mOhm @ 10A, 10V
Vgs-th-Max-Id
5V @ 250μA
Gate-Lade-Qg-Vgs
98nC @ 10V
Pd-Verlustleistung
208 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
65 ns
Anstiegszeit
140 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
20 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Widerstand
150 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
230 ns
Typische-Einschaltverzögerungszeit
62 ns
Vorwärts-Transkonduktanz-Min
17 S
Kanal-Modus
Erweiterung
Tags
FCB20N60F, FCB20N, FCB20, FCB2, FCB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 20 A, 190 mΩ, D2PAK
***p One Stop Global
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
***Components
MOSFET N-Channel 600V 20A SuperFET D2PAK
***ure Electronics
FCB20N60F Series 600 V 0.19 Ohms Surface Mount N-Channel FRFET D2-PAK-3
***i-Key
MOSFET N-CH 600V 20A D2PAK
***ser
MOSFETs 600V, NCH, FRFET
***inecomponents.com
600V N-CHANNEL FRFET
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:20A; Drain Source Voltage, Vds:600V; On Resistance, Rds(on):0.15ohm; Rds(on) Test Voltage, Vgs:10V; Operating Temperature Range:-55°C to +150°C; Package/Case:3-D2Pak
***th Star Micro
SuperFET is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
***nell
MOSFET, N, 600V, D2-PAK; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.19ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:D2-PAK; Capacitance, Ciss typ:2370pF; Case style, alternate:TO-263; Current, Idm pulse:60A; Marking, SMD:FCB20N60F; Pin format:G(1),D(2),S(3); Power dissipation:208W; Power, Pd:208W; Temperature, Tj max:150°C; Termination Type:SMD; Time, fall:65ns; Time, rise:140ns; Time, trr typ:160ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Rds measurement:10V; Voltage, Vds max:600V; Voltage, Vgs th max:5V; dv/dt:50V/ns
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Teil # Mfg. Beschreibung Aktie Preis
FCB20N60FTM
DISTI # V72:2272_06337697		ON Semiconductor600V, NCH, FRFET798
  • 500:$2.5740
  • 250:$2.8590
  • 100:$3.0130
  • 25:$3.1269
  • 10:$3.4750
  • 1:$4.4847
FCB20N60FTM
DISTI # V36:1790_06337697		ON Semiconductor600V, NCH, FRFET0
  • 800000:$1.8710
  • 400000:$1.8740
  • 80000:$2.1480
  • 8000:$2.6300
  • 800:$2.7100
FCB20N60FTM
DISTI # FCB20N60FTMCT-ND		ON SemiconductorMOSFET N-CH 600V 20A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1600In Stock
  • 100:$2.7327
  • 10:$3.3350
  • 1:$3.7100
FCB20N60FTM
DISTI # FCB20N60FTMDKR-ND		ON SemiconductorMOSFET N-CH 600V 20A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1600In Stock
  • 100:$2.7327
  • 10:$3.3350
  • 1:$3.7100
FCB20N60FTM
DISTI # FCB20N60FTMTR-ND		ON SemiconductorMOSFET N-CH 600V 20A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 5600:$1.7416
  • 2400:$1.8096
  • 1600:$1.9048
  • 800:$2.2586
FCB20N60FTM
DISTI # 33079212		ON Semiconductor600V, NCH, FRFET800
  • 2400:$1.7960
  • 1600:$1.8858
  • 800:$2.2360
FCB20N60FTM
DISTI # 33599206		ON Semiconductor600V, NCH, FRFET800
  • 800:$2.2667
FCB20N60FTM
DISTI # 32681977		ON Semiconductor600V, NCH, FRFET798
  • 500:$2.5740
  • 250:$2.8590
  • 100:$3.0130
  • 25:$3.1269
  • 10:$3.4750
  • 4:$4.4847
FCB20N60FTM
DISTI # FCB20N60FTM		ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB20N60FTM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 8000:€1.4900
  • 4800:€1.5900
  • 3200:€1.6900
  • 800:€1.7900
  • 1600:€1.7900
FCB20N60FTM
DISTI # FCB20N60FTM		ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB20N60FTM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
  • 40000:$2.1243
  • 20000:$2.1597
  • 8000:$2.2341
  • 4000:$2.3139
  • 2400:$2.3996
  • 1600:$2.4919
  • 800:$2.5916
FCB20N60FTM
DISTI # FCB20N60FTM		ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FCB20N60FTM)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$1.4900
  • 800:$1.5900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.5900
FCB20N60FTM
DISTI # 20M1150		ON SemiconductorN CHANNEL MOSFET, 600V, 20A, D2-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes0
  • 4000:$1.9400
  • 2400:$2.1000
  • 1600:$2.1600
  • 1:$2.3300
  • 800:$2.3300
FCB20N60FTM
DISTI # 67P3446		ON SemiconductorN CHANNEL MOSFET, 600V, 20A, D2-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes0
  • 500:$2.6500
  • 250:$2.9400
  • 100:$3.0900
  • 50:$3.2500
  • 25:$3.4000
  • 10:$3.5600
  • 1:$4.1600
FCB20N60FTM
DISTI # 512-FCB20N60FTM		ON SemiconductorMOSFET 600V NCH FRFET
RoHS: Compliant		695
  • 1:$3.4200
  • 10:$2.9100
  • 100:$2.5200
  • 250:$2.3900
  • 500:$2.1500
  • 800:$1.8600
FCB20N60FTMFairchild Semiconductor Corporation 253
    FCB20N60FTM
    DISTI # XSFP00000073919    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		1600 in Stock0 on Order
    • 1600:$2.1600
    • 800:$2.3100
    Bild Teil # Beschreibung
    FCB20N60FTM

    Mfr.#: FCB20N60FTM

    OMO.#: OMO-FCB20N60FTM-ON-SEMICONDUCTOR

    		 MOSFET N-CH 600V 20A D2PAK
    FCB20N60F_F085

    Mfr.#: FCB20N60F_F085

    OMO.#: OMO-FCB20N60F-F085-124

    		 Darlington Transistors MOSFET 600V, 20A SuperFET
    FCB2012K-070T09

    Mfr.#: FCB2012K-070T09

    OMO.#: OMO-FCB2012K-070T09-1190

    		 Neu und Original
    FCB2012K-110

    Mfr.#: FCB2012K-110

    OMO.#: OMO-FCB2012K-110-1190

    		 Neu und Original
    FCB2012K-110T06

    Mfr.#: FCB2012K-110T06

    OMO.#: OMO-FCB2012K-110T06-1190

    		 Neu und Original
    FCB2012K-190T06

    Mfr.#: FCB2012K-190T06

    OMO.#: OMO-FCB2012K-190T06-1190

    		 Neu und Original
    FCB2012K-280T06

    Mfr.#: FCB2012K-280T06

    OMO.#: OMO-FCB2012K-280T06-1190

    		 Neu und Original
    FCB2012KF-260T07

    Mfr.#: FCB2012KF-260T07

    OMO.#: OMO-FCB2012KF-260T07-1190

    		 Neu und Original
    FCB20N60TM-CUT TAPE

    Mfr.#: FCB20N60TM-CUT TAPE

    OMO.#: OMO-FCB20N60TM-CUT-TAPE-1190

    		 Neu und Original
    FCB20N60-F085

    Mfr.#: FCB20N60-F085

    OMO.#: OMO-FCB20N60-F085-ON-SEMICONDUCTOR

    		 MOSFET N-CH 600V 20A D2PAK
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von FCB20N60FTM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,24 $
    2,24 $
    10
    2,12 $
    21,23 $
    100
    2,01 $
    201,15 $
    500
    1,90 $
    949,90 $
    1000
    1,79 $
    1 788,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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