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MJE181STU

MJE181STU
Mfr. #:
MJE181STU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - BJT NPN Epitaxial Sil
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MJE181STU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-126-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
60 V
Kollektor- Basisspannung VCBO:
80 V
Emitter- Basisspannung VEBO:
7 V
Kollektor-Emitter-Sättigungsspannung:
1.7 V
Maximaler DC-Kollektorstrom:
3 A
Bandbreitenprodukt fT gewinnen:
50 MHz
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
MJE181
DC-Stromverstärkung hFE Max:
250
Höhe:
11 mm
Länge:
8 mm
Verpackung:
Rohr
Breite:
3.25 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
3 A
DC-Kollektor/Basisverstärkung hfe Min:
50
Pd - Verlustleistung:
12.5 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
1920
Unterkategorie:
Transistoren
Gewichtseinheit:
0.026843 oz
Tags
MJE181, MJE18, MJE1, MJE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,bjt,npn,60V V(Br)Ceo,3A I(C),to-126 Rohs Compliant: Yes
***emi
3.0 A, 60 V NPN Bipolar Power Transistor
***r Electronics
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
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***ark
Bipolar (BJT) Single Transistor, NPN, 60 V, 1.25 W, 1.5 A, 40
***emi
1.5 A, 60 V NPN Power Bipolar Junction Transistor
*** Electronic Components
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Trans GP BJT NPN 60V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Bulk
***r Electronics
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
***nell
TRANSISTOR, NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: 1.5A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-126; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 500mV; Current Ic Continuous a Max: 500mA; Hfe Min: 100; Termination Type: Through Hole; Transistor Type: Power Bipolar
***emi
1.5 A, 60 V NPN Power Bipolar Junction Transistor
***ure Electronics
BD135 Series 60 V 1.5 A Through Hole NPN Epitaxial Silicon Transistor - TO-126
***r Electronics
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
***ow.cn
Trans GP BJT NPN 60V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Tube
***el Electronic
Bipolar Transistors - BJT NPN Epitaxial Sil
***nell
TRANSISTOR, BIPOL, NPN, 60V, TO-126-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 12.5W; DC Collector Current: 1.5A; DC Current Gain hFE: 63hFE; Transis
***et
Bipolar (BJT) Transistor NPN 45V 2A 3MHz 25W Through Hole TO-126
*** Electronic Components
Bipolar Transistors - BJT NPN Epitaxial Sil
***ark
RAIL / NPN/2A/45V/TO-126
***el Electronic
JFET N-CH 30V 625MW TO92
Teil # Mfg. Beschreibung Aktie Preis
MJE181STU
DISTI # V36:1790_06302177		ON SemiconductorNPN EPITAXIAL SILICON TRANSIST918
  • 50000:$0.1288
  • 25000:$0.1318
  • 10000:$0.1388
  • 2500:$0.1487
  • 1000:$0.1744
  • 100:$0.2247
  • 10:$0.4029
  • 1:$0.4868
MJE181STU
DISTI # MJE181STU-ND		ON SemiconductorTRANS NPN 60V 3A TO-126
RoHS: Compliant
Min Qty: 1
Container: Tube		1129In Stock
  • 1000:$0.1830
  • 500:$0.2368
  • 100:$0.3014
  • 10:$0.4040
  • 1:$0.4700
MJE181STU
DISTI # 26636602		ON SemiconductorNPN EPITAXIAL SILICON TRANSIST5760
  • 50000:$0.1301
  • 25000:$0.1307
  • 10000:$0.1376
  • 2500:$0.1475
  • 1920:$0.1732
MJE181STU
DISTI # 27461005		ON SemiconductorNPN EPITAXIAL SILICON TRANSIST918
  • 50000:$0.1385
  • 25000:$0.1417
  • 10000:$0.1492
  • 2500:$0.1599
  • 1000:$0.1875
  • 100:$0.2416
  • 49:$0.3938
MJE181STU
DISTI # MJE181STU		ON SemiconductorTrans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-126 Rail - Bulk (Alt: MJE181STU)
RoHS: Compliant
Min Qty: 2273
Container: Bulk		Americas - 0
  • 22730:$0.1349
  • 11365:$0.1389
  • 6819:$0.1409
  • 4546:$0.1419
  • 2273:$0.1429
MJE181STU
DISTI # MJE181STU		ON SemiconductorTrans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-126 Rail - Rail/Tube (Alt: MJE181STU)
RoHS: Compliant
Min Qty: 1920
Container: Tube		Americas - 0
  • 19200:$0.1259
  • 11520:$0.1289
  • 7680:$0.1309
  • 1920:$0.1329
  • 3840:$0.1329
MJE181STU
DISTI # 82C8693		ON SemiconductorTRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-126 ROHS COMPLIANT: YES0
  • 50000:$0.1400
  • 24000:$0.1430
  • 10000:$0.1500
  • 2000:$0.1600
  • 1000:$0.1650
  • 100:$0.2320
  • 10:$0.3450
  • 1:$0.5080
MJE181STU
DISTI # 512-MJE181STU		ON SemiconductorBipolar Transistors - BJT NPN Epitaxial Sil
RoHS: Compliant		5963
  • 1:$0.4500
  • 10:$0.3710
  • 100:$0.2260
  • 1000:$0.1750
  • 2500:$0.1490
MJE181STUFairchild Semiconductor CorporationPower Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
RoHS: Compliant		5760
  • 500:$0.1500
  • 1000:$0.1500
  • 100:$0.1600
  • 25:$0.1700
  • 1:$0.1800
MJE181STU
DISTI # 8062891		ON SemiconductorTRANSISTORFAIRCHILDMJE181STU, TU720
  • 600:£0.1770
  • 300:£0.2020
  • 120:£0.2260
  • 60:£0.3030
Bild Teil # Beschreibung
OPA1678IDR

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IS61WV5128BLL-10TLI

Mfr.#: IS61WV5128BLL-10TLI

OMO.#: OMO-IS61WV5128BLL-10TLI

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MJE171G

Mfr.#: MJE171G

OMO.#: OMO-MJE171G

 Bipolar Transistors - BJT 3A 60V 12.5W PNP
MJE181G

Mfr.#: MJE181G

OMO.#: OMO-MJE181G

 Bipolar Transistors - BJT 3A 60V 12.5W NPN
DLW5BTH251TQ2L

Mfr.#: DLW5BTH251TQ2L

OMO.#: OMO-DLW5BTH251TQ2L

 Common Mode Chokes / Filters 250ohms 3A 50VDC AECQ200 Pwrtrain/Saf
FG16C0G1H104JNT06

Mfr.#: FG16C0G1H104JNT06

OMO.#: OMO-FG16C0G1H104JNT06

 Multilayer Ceramic Capacitors MLCC - Leaded RAD 50V 0.1uF C0G 5% LS:2.5mm
IS61WV5128BLL-10TLI

Mfr.#: IS61WV5128BLL-10TLI

OMO.#: OMO-IS61WV5128BLL-10TLI-INTEGRATED-SILICON-SOLUTION

 SRAM 4Mb (512k x 8) 10ns Async SRAM 3.3v
1025HC50-RTR

Mfr.#: 1025HC50-RTR

OMO.#: OMO-1025HC50-RTR-EATON

 Fast-acting, high current, surface mount ceramic tube fuses
DLW5BTH251TQ2L

Mfr.#: DLW5BTH251TQ2L

OMO.#: OMO-DLW5BTH251TQ2L-MURATA-ELECTRONICS

 CMC 3A 2LN 250 OHM SMD
OPA1678IDR

Mfr.#: OPA1678IDR

OMO.#: OMO-OPA1678IDR-TEXAS-INSTRUMENTS

 IC AUDIO AMP 2 CIRCUIT 8SOIC
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von MJE181STU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,45 $
0,45 $
10
0,37 $
3,71 $
100
0,23 $
22,60 $
1000
0,18 $
175,00 $
2500
0,15 $
372,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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