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IKW25N120T2

IKW25N120T2
Mfr. #:
IKW25N120T2
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors LOW LOSS DuoPack 1200V 25A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IKW25N120T2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IKW25N120T2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
IGBTs - Single
Serie
TrenchStopR
Verpackung
Rohr
Teil-Aliasnamen
IKW25N120T2FKSA1 IKW25N120T2XK SP000244960
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
PG-TO247-3
Aufbau
Single
Leistung max
349W
Reverse-Recovery-Time-trr
195ns
Strom-Kollektor-Ic-Max
50A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
IGBT-Typ
Graben
Strom-Kollektor-gepulster-Icm
100A
Vce-on-Max-Vge-Ic
2.2V @ 15V, 25A
Schaltenergie
2.9mJ
Gate-Gebühr
120nC
Td-ein-aus-25°C
27ns/265ns
Testbedingung
600V, 25A, 16.4 Ohm, 15V
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 40 C
Kollektor-Emitter-Spannung-VCEO-Max
1200 V
Kollektor-Emitter-Sättigungsspannung
2.2 V
Maximale Gate-Emitter-Spannung
+/- 20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
50 A
Tags
IKW25N120T2, IKW25N120T, IKW25N, IKW25, IKW2, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 50A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; Power Dissipation Max:349W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
1200V Gen8 IGBTs
Infineon 1200V Gen8 IGBTs feature IR's latest generation trench gate field stop technology delivered in industry standard TO-247 packages to provide best-in-class performance for industrial and energy-saving applications. The Gen8 technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. These Gen8 IGBTs have current ratings from 8A up to 60A with typical VCE(ON) of 1.7V, and a short-circuit rating of 10µs to reduce power dissipation, resulting in increased power density and robustness. Using thin wafer technology, 1200V Gen8 IGBTs deliver improved thermal resistance and maximum junction temperature up to 175°C.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IKW25N120T2FKSA1
DISTI # V99:2348_06377579		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 349000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		168
  • 1000:$3.6870
  • 500:$4.2890
  • 100:$4.9710
  • 10:$6.0550
  • 1:$7.4327
IKW25N120T2FKSA1
DISTI # V36:1790_06377579		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 349000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IKW25N120T2FKSA1
    DISTI # IKW25N120T2FKSA1-ND    		Infineon Technologies AGIGBT 1200V 50A 349W TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		687In Stock
    • 720:$4.4315
    • 240:$5.0891
    • 25:$5.8612
    • 10:$6.1470
    • 1:$6.8000
    IKW25N120T2FKSA1
    DISTI # 27551382    		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 349000mW 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		168
    • 1000:$3.9635
    • 500:$4.6107
    • 100:$5.3438
    • 10:$6.5091
    • 2:$7.2638
    IKW25N120T2
    DISTI # 30580818    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247
    RoHS: Compliant    		23
    • 50:$4.1310
    • 6:$4.3605
    IKW25N120T2
    DISTI # IKW25N120T2    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube (Alt: IKW25N120T2)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Asia - 1200
    • 12000:$3.9462
    • 6000:$4.0043
    • 2400:$4.0640
    • 1200:$4.1256
    • 720:$4.2545
    • 480:$4.3918
    • 240:$4.5382
    IKW25N120T2
    DISTI # SP000244960    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube (Alt: SP000244960)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 1520
    • 100:€2.9900
    • 500:€2.9900
    • 1000:€2.9900
    • 50:€3.0900
    • 10:€3.2900
    • 25:€3.2900
    • 1:€3.3900
    IKW25N120T2
    DISTI # IKW25N120T2    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube - Bulk (Alt: IKW25N120T2)
    RoHS: Not Compliant
    Min Qty: 106
    Container: Bulk    		Americas - 0
    • 1060:$2.8900
    • 530:$2.9900
    • 318:$3.0900
    • 212:$3.1900
    • 106:$3.3900
    IKW25N120T2
    DISTI # IKW25N120T2FKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW25N120T2FKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 2400:$3.3900
    • 1440:$3.4900
    • 960:$3.5900
    • 480:$3.6900
    • 240:$3.8900
    IKW25N120T2XK
    DISTI # IKW25N120T2XK    		Infineon Technologies AG- Bulk (Alt: IKW25N120T2XK)
    RoHS: Not Compliant
    Min Qty: 105
    Container: Bulk    		Americas - 0
    • 1050:$2.9900
    • 525:$3.0900
    • 315:$3.1900
    • 210:$3.2900
    • 105:$3.3900
    IKW25N120T2FKSA1
    DISTI # 13T9447    		Infineon Technologies AGIGBT+ DIODE,1200V,25A,TO247,DC Collector Current:25A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:349W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,OperatingRoHS Compliant: Yes0
    • 500:$3.0200
    • 250:$3.1300
    • 100:$3.7200
    • 50:$4.2900
    • 25:$4.5800
    • 10:$5.2300
    • 1:$6.0400
    IKW25N120T2
    DISTI # 726-IKW25N120T2    		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 1200V 25A
    RoHS: Compliant    		938
    • 1:$6.4700
    • 10:$5.8500
    • 25:$5.5800
    • 100:$4.8400
    • 250:$4.6300
    • 500:$4.2200
    IKW25N120T2Infineon Technologies AGInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
    RoHS: Compliant    		72
    • 1000:$3.1100
    • 500:$3.2700
    • 100:$3.4000
    • 25:$3.5500
    • 1:$3.8200
    IKW25N120T2XKInfineon Technologies AG 
    RoHS: Not Compliant    		8
    • 1000:$3.1600
    • 500:$3.3200
    • 100:$3.4600
    • 25:$3.6100
    • 1:$3.8900
    IKW25N120T2FKSA1
    DISTI # 8977403P    		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1.2KV 50A TO247, TU214
    • 100:£3.4450
    • 40:£3.9700
    • 20:£4.1550
    • 4:£4.3700
    IKW25N120T2FKSA1
    DISTI # 8977403    		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1.2KV 50A TO247, PK110
    • 100:£3.4450
    • 40:£3.9700
    • 20:£4.1550
    • 4:£4.3700
    • 2:£4.7500
    IKW25N120T2
    DISTI # IKW25N120T2    		Infineon Technologies AGTransistor: IGBT,1.2kV,50A,349W,TO247-397
    • 1:$6.2900
    • 3:$5.5300
    • 10:$4.4900
    • 25:$4.1800
    • 100:$3.7700
    IKW25N120T2FKSA1
    DISTI # 1832382    		Infineon Technologies AGIGBT+ DIODE,1200V,25A,TO247215
    • 500:£3.1500
    • 250:£3.3900
    • 100:£3.6200
    • 10:£4.3700
    • 1:£5.5900
    IKW25N120T2FKSA1
    DISTI # XSKDRABS0030961    		Infineon Technologies AGCeramic Capacitor, Multilayer, Ceramic, 6.3V,20%+Tol, 20% -Tol, X5R, 15% TC, 4.7uF, SurfaceMount,0612
    RoHS: Compliant    		1280 in Stock0 on Order
    • 1280:$4.8600
    • 240:$5.1960
    IKW25N120T2
    DISTI # IGBT2109    		Infineon Technologies AGIGBT 1200V25A1,7VTO247-3
    RoHS: Compliant    		Stock DE - 1495Stock HK - 0Stock US - 0
    • 30:$4.2600
    • 60:$4.0000
    • 90:$3.9300
    • 120:$3.8600
    • 180:$3.6300
    IKW25N120T2Infineon Technologies AG 240
    • 1:¥45.8584
    • 10:¥40.7429
    • 25:¥38.8513
    • 100:¥33.6856
    IKW25N120T2FKSA1
    DISTI # IKW25N120T2    		Infineon Technologies AG1200V 50A 349W TO247
    RoHS: Compliant    		421
    • 1:€6.9600
    • 10:€3.9600
    • 50:€2.9600
    • 100:€2.8500
    IKW25N120T2Infineon Technologies AG1200V,50A,IGBT with Anti-Parallel Diode60
    • 1:$5.7800
    • 100:$4.8200
    • 500:$4.2500
    • 1000:$4.1300
    Bild Teil # Beschreibung
    IKW25T120

    Mfr.#: IKW25T120

    OMO.#: OMO-IKW25T120

    		 IGBT Transistors LOW LOSS DuoPack 1200V 25A
    IKW25N120H3 , 2SC5227-3

    Mfr.#: IKW25N120H3 , 2SC5227-3

    OMO.#: OMO-IKW25N120H3-2SC5227-3-1190

    		 Neu und Original
    IKW25N120T

    Mfr.#: IKW25N120T

    OMO.#: OMO-IKW25N120T-1190

    		 Neu und Original
    IKW25T120,K25T120

    Mfr.#: IKW25T120,K25T120

    OMO.#: OMO-IKW25T120-K25T120-1190

    		 Neu und Original
    IKW25T120,K25T120,

    Mfr.#: IKW25T120,K25T120,

    OMO.#: OMO-IKW25T120-K25T120--1190

    		 Neu und Original
    IKW25T1202

    Mfr.#: IKW25T1202

    OMO.#: OMO-IKW25T1202-1190

    		 Neu und Original
    IKW25T120FKSA1

    Mfr.#: IKW25T120FKSA1

    OMO.#: OMO-IKW25T120FKSA1-INFINEON-TECHNOLOGIES

    		 IGBT 1200V 50A 190W TO247-3
    IKW25T120T2

    Mfr.#: IKW25T120T2

    OMO.#: OMO-IKW25T120T2-1190

    		 Neu und Original
    IKW25N120H3XK

    Mfr.#: IKW25N120H3XK

    OMO.#: OMO-IKW25N120H3XK-1190

    		 IGBT Transistors IGBT PRODUCTS
    IKW25N120T2

    Mfr.#: IKW25N120T2

    OMO.#: OMO-IKW25N120T2-126

    		 IGBT Transistors LOW LOSS DuoPack 1200V 25A
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von IKW25N120T2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,34 $
    4,34 $
    10
    4,12 $
    41,18 $
    100
    3,90 $
    390,15 $
    500
    3,68 $
    1 842,40 $
    1000
    3,47 $
    3 468,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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