IPW50R299CP

IPW50R299CP
Mfr. #:
IPW50R299CP
Hersteller:
Rochester Electronics, LLC
Beschreibung:
IGBT Transistors MOSFET N-Ch 500V 12A TO247-3 CoolMOS CP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPW50R299CP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Produktkategorie
FETs - Einzeln
Serie
CoolMOS CP
Verpackung
Rohr
Teil-Aliasnamen
IPW50R299CPFKSA1 IPW50R299CPXK SP000301163
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Handelsname
CoolMOS
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
104 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
12 ns
Anstiegszeit
14 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
12 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Rds-On-Drain-Source-Widerstand
299 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
80 ns
Typische-Einschaltverzögerungszeit
35 ns
Kanal-Modus
Erweiterung
Tags
IPW50R29, IPW50R2, IPW50, IPW5, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-247
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:550V; On Resistance Rds(on):299mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Package / Case:TO-247; Power Dissipation Pd:104W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:550V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
Teil # Mfg. Beschreibung Aktie Preis
IPW50R299CPFKSA1
DISTI # IPW50R299CPFKSA1-ND
Infineon Technologies AGMOSFET N-CH 550V 12A TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    IPW50R299CPInfineon Technologies AGPower Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
    RoHS: Compliant
    9838
    • 1000:$1.2600
    • 500:$1.3300
    • 100:$1.3800
    • 25:$1.4400
    • 1:$1.5600
    IPW50R299CPFKSA1Infineon Technologies AGPower Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
    RoHS: Compliant
    140
    • 1000:$1.2600
    • 500:$1.3300
    • 100:$1.3800
    • 25:$1.4400
    • 1:$1.5600
    IPW50R299CP
    DISTI # 726-IPW50R299CP
    Infineon Technologies AGMOSFET N-Ch 500V 12A TO247-3 CoolMOS CP
    RoHS: Compliant
    210
    • 1:$2.7600
    • 10:$2.3500
    • 100:$2.0400
    IPW50R299CPFKSA1
    DISTI # N/A
    Infineon Technologies AGMOSFET LOW POWER_LEGACY0
      Bild Teil # Beschreibung
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von IPW50R299CP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,12 $
      2,12 $
      10
      2,01 $
      20,09 $
      100
      1,90 $
      190,35 $
      500
      1,80 $
      898,90 $
      1000
      1,69 $
      1 692,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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